NXP Semiconductors
Technical Data
Document Number: MRFX1K80N
Rev. 0, 04/2018
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR
industrial, medical, broadcast, aerospace and mobile radio applications. Their
unmatched input and output design supports frequency use from 1.8 to
400 MHz.
Typical Performance
Frequency
(MHz)
87.5–108
(1,2)
230
(3)
Signal Type
CW
Pulse
(100
sec,
20% Duty Cycle)
V
DD
(V)
60
65
P
out
(W)
1670 CW
1800 Peak
G
ps
(dB)
23.8
24.4
D
(%)
83.5
75.7
MRFX1K80N
MRFX1K80GN
1.8–400 MHz, 1800 W CW, 65 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
Load Mismatch/Ruggedness
Frequency
(MHz)
230
(3)
Signal Type
Pulse
(100
sec,
20%
Duty Cycle)
VSWR
> 65:1 at all
Phase Angles
P
in
(W)
14 W Peak
(3 dB
Overdrive)
Test
Voltage
65
Result
No Device
Degradation
OM-
-1230-
-4L
PLASTIC
MRFX1K80N
1. Measured in 87.5–108 MHz broadband reference circuit (page 5).
2. The values shown are the center band performance numbers across the indicated
frequency range.
3. Measured in 230 MHz narrowband production test fixture (page 11).
OM-
-1230G-
-4L
PLASTIC
MRFX1K80GN
Features
Unmatched input and output allowing wide frequency range utilization
Device can be used single--ended or in a push--pull configuration
Qualified up to a maximum of 65 V
DD
operation
Characterized from 30 to 65 V for extended power range
Lower thermal resistance package
High breakdown voltage for enhanced reliability
Suitable for linear application with appropriate biasing
Integrated ESD protection with greater negative gate--source voltage range for
improved Class C operation
Included in NXP product longevity program with assured supply for a minimum
of 15 years after launch
Typical Applications
Industrial, scientific, medical (ISM)
– Laser generation
– Plasma generation
– Particle accelerators
– MRI, RF ablation and skin treatment
– Industrial heating, welding and drying systems
Radio and VHF TV broadcast
Aerospace
– HF communications
– Radar
Gate A 3
1 Drain A
Gate B 4
2 Drain B
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
2018 NXP B.V.
MRFX1K80N MRFX1K80GN
1
RF Device Data
NXP Semiconductors
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature Range
Operating Junction Temperature Range
(1,2)
Total Device Dissipation @ T
C
= 25C
Derate above 25C
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
P
D
Value
–0.5, +179
–6.0, +10
– 65 to +150
–40 to +150
–40 to +225
3333
16.7
Unit
Vdc
Vdc
C
C
C
W
W/C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
CW: Case Temperature 112C, 1800 W CW, 65 Vdc, I
DQ(A+B)
= 150 mA, 98 MHz
Thermal Impedance, Junction to Case
Pulse: Case Temperature 77C, 1800 W Peak, 100
sec
Pulse Width, 20% Duty Cycle,
65 Vdc, I
DQ(A+B)
= 100 mA, 230 MHz
Symbol
R
JC
Z
JC
Value
(2,3)
0.06
0.009
Unit
C/W
C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Charge Device Model (per JESD22--C101)
Class
2, passes 2500 V
C3, passes 1200 V
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
C
Table 5. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Off Characteristics
(4)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Drain--Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 100 mAdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 179 Vdc, V
GS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(4)
(V
DS
= 10 Vdc, I
D
= 740
Adc)
Gate Quiescent Voltage
(V
DD
= 65 Vdc, I
DQ(A+B)
= 100 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(4)
(V
GS
= 10 Vdc, I
D
= 2.76 Adc)
Forward Transconductance
(4)
(V
DS
= 10 Vdc, I
D
= 43 Adc)
1.
2.
3.
4.
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2.1
2.5
—
—
2.5
2.9
0.21
44.7
2.9
3.3
—
—
Vdc
Vdc
Vdc
S
I
GSS
V
(BR)DSS
I
DSS
I
DSS
—
179
—
—
—
193
—
—
1
—
10
100
Adc
Vdc
Adc
mAdc
Symbol
Min
Typ
Max
Unit
Continuous use at maximum temperature will affect MTTF.
MTTF calculator available at
http://www.nxp.com/RF/calculators.
Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to
http://www.nxp.com/RF
and search for AN1955.
Each side of device measured separately.
(continued)
MRFX1K80N MRFX1K80GN
2
RF Device Data
NXP Semiconductors
Table 5. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Characteristic
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 65 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 65 Vdc
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 65 Vdc, V
GS
= 0 Vdc
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
5.6
216
765
—
—
—
pF
pF
pF
Symbol
Min
Typ
Max
Unit
Functional Tests
(In NXP Narrowband Production Test Fixture, 50 ohm system) V
DD
= 65 Vdc, I
DQ(A+B)
= 100 mA, P
out
= 1800 W Peak
(360 W Avg.), f = 230 MHz, 100
sec
Pulse Width, 20% Duty Cycle
Power Gain
Drain Efficiency
Input Return Loss
G
ps
D
IRL
23.0
71.0
—
24.4
75.7
–16
26.0
—
–9
dB
%
dB
Table 6. Load Mismatch/Ruggedness
(In NXP Narrowband Production Test Fixture, 50 ohm system) I
DQ(A+B)
= 100 mA
Frequency
(MHz)
230
Signal Type
Pulse
(100
sec,
20% Duty Cycle)
VSWR
> 65:1 at all
Phase Angles
P
in
(W)
14 W Peak
(3 dB Overdrive)
Test Voltage, V
DD
65
Result
No Device Degradation
Table 7. Ordering Information
Device
MRFX1K80NR5
MRFX1K80GNR5
Tape and Reel Information
R5 Suffix = 50 Units, 56 mm Tape Width, 13--Reel
OM--1230--4L
OM--1230G--4L
Package
1. Each side of device measured separately.
MRFX1K80N MRFX1K80GN
RF Device Data
NXP Semiconductors
3
TYPICAL CHARACTERISTICS
2000
1000
C
iss
C, CAPACITANCE (pF)
C
oss
NORMALIZED V
GS(Q)
1.08
1.06
1.04
1.02
1
0.98
0.96
0.94
70
0.92
–50
–25
0
25
50
75
100
1000 mA
1500 mA
500 mA
I
DQ(A+B)
= 100 mA
V
DD
= 65 Vdc
100
10
Measured with
30
mV(rms)ac @ 1 MHz
V
GS
= 0 Vdc
0
10
20
30
40
50
V
DS
, DRAIN--SOURCE VOLTAGE (VOLTS)
C
rss
1
60
T
C
, CASE TEMPERATURE (C)
I
DQ
(mA)
100
500
1000
1500
Slope (mV/C)
–3.14
–2.88
–2.75
–2.65
Note:
Each side of device measured separately.
Figure 2. Capacitance versus Drain-
-Source Voltage
Figure 3. Normalized V
GS
versus Quiescent
Current and Case Temperature
MRFX1K80N MRFX1K80GN
4
RF Device Data
NXP Semiconductors
87.5–108 MHz BROADBAND REFERENCE CIRCUIT – 2.9
5.1 (7.3 cm
13.0 cm)
Table 8. 87.5–108 MHz Broadband Performance
(In NXP Reference Circuit, 50 ohm system)
I
DQ(A+B)
= 200 mA, P
in
= 7 W, CW
Frequency
(MHz)
87.5
98
108
V
DD
(V)
60
60
60
P
out
(W)
1580
1670
1600
G
ps
(dB)
23.5
23.8
23.6
D
(%)
84.6
83.5
80.6
MRFX1K80N MRFX1K80GN
RF Device Data
NXP Semiconductors
5
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