Transmissive Photosensors (Photo lnterrupters)
CNZ1105
(ON1105)
Photo Interrupter
14.3
±0.3
Unit: mm
For contactless SW, object detection
■
Overview
CNZ1105 is a photocoupler in which a high efficiency GaAs
infrared light emitting diode is used as the light emitting element,
and a high sensitivity phototransistor is used as the light detecting
element. The two elements are arranged so as to face each other,
and objects passing between them are detected.
Mark for Indicating
LED side
3.0
±0.2
0.5
±0.1
10.0
±0.2
3.0
±0.3
7.0 min.
2.5
±0.2
4-0.45
±0.2
(10.0)
(2)
(3)
(2.54)
2-φ3.2
±0.2
•
Highly precise position detection: 0.3 mm
•
Fast response t
r
, t
f
=
6
µs
(typ.)
•
Small output current variation against change in temperature
6.2
±0.2
■
Features
(1)
19.0
±0.2
25.0
±0.35
(4)
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Input (Light
Reverse voltage
Power dissipation
*1
Output (Photo Collector-emitter voltage
(Base open)
transistor)
Emitter-collector voltage
(Base open)
Collector current
Collector power dissipation
Temperature
*2
Symbol
V
R
I
F
P
D
V
CEO
V
ECO
I
C
P
C
T
opr
T
stg
Rating
3
50
75
30
5
20
100
−25
to
+85
−30
to
+100
Unit
V
mA
mW
V
V
mA
mW
°C
°C
1
2
1: Anode
2: Cathode
3: Collector
4: Emitter
PISTR104-007 Package
Internal Connection
3
emitting diode) Forward current
4
Note) *1: Input power derating ratio is 1.0 mW/°C at
T
a
≥
25°C.
*2: Output power derating ratio is 1.34 mW/°C
at T
a
≥
25°C.
Operating ambient temperature
Storage temperature
■
Electrical-Optical Characteristics
T
a
=
25°C
±
3°C
Parameter
Input
Forward voltage
Symbol
V
F
I
R
C
t
I
CEO
C
C
I
C
t
r
t
f
3. *: Switching time measurement circuit
Sig. in
V
CC
(Input pulse)
(Output pulse)
90%
10%
t
d
t
r
t
f
t
d
: Delay time
t
r
: Rise time
t
f
: Fall time
Conditions
I
F
=
50 mA
V
R
=
3 V
V
R
=
0 V, f
=
1 MHz
V
CE
=
10 V
V
CE
=
0 V, f
=
1 MHz
V
CE
=
10 V, I
F
=
20 mA
I
F
=
50 mA, I
C
=
0.1 mA
V
CC
=
10 V, I
C
=
1 mA, R
L
=
100
Ω
Min
Typ
1.2
Max
1.5
10
Unit
V
µA
pF
nA
pF
mA
characteristics Reverse current
Terminal capacitance
Output
Collector-emitter cutoff current
characteristics (Base open)
Collector-emitter capacitance
Transfer
Collector current
Rise time
*
Fall time
*
Note) 1. Input and output are practiced
by electricity.
2. This device is designed be dis-
regarded radiation.
50
200
5
0.3
0.3
6.0
6.0
characteristics Collector-emitter saturation voltage V
CE(sat)
V
µs
µs
Sig. out
50
Ω
R
L
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SHG00028BED
3.0
±0.2
1
Caution for Safety
■
This product contains Gallium Arsenide (GaAs).
DANGER
GaAs powder and vapor are hazardous to human health if inhaled or
ingested. Do not burn, destroy, cut, cleave off, or chemically dis-
solve the product. Follow related laws and ordinances for disposal.
The product should be excluded form general industrial waste or
household garbage.
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
•
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
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