BYC75W-600P
Hyperfast power diode
29 April 2016
Product data sheet
1. General description
Hyperfast power diode in a SOD142 (2-lead TO247) plastic package.
2. Features and benefits
•
•
•
•
•
Fast switching and soft reverse recovery characteristics
Low forward voltage drop
Low leakage current
Low reverse recovery current
Reduces switching losses in associated MOSFET or IGBT
3. Applications
•
•
•
•
UPS
EV Charger
Welding Machine
Air Conditioner
4. Quick reference data
Table 1. Quick reference data
Symbol
V
RRM
I
F(AV)
I
FRM
I
FSM
Parameter
repetitive peak reverse
voltage
average forward
current
δ = 0.5 ; T
mb
≤ 56 °C; square-wave
pulse;
Fig. 1; Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
-
Typ
-
-
-
-
-
Max
600
75
150
700
750
Unit
V
A
A
A
A
repetitive peak forward δ = 0.5 ; t
p
= 25 µs; T
mb
≤ 56 °C;
current
square-wave pulse
non-repetitive peak
forward current
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave
pulse;
Fig. 4
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave
pulse;
Fig. 4
Static characteristics
V
F
forward voltage
I
F
= 75 A; T
j
= 25 °C;
Fig. 6
I
F
= 75 A; T
j
= 150 °C;
Fig. 6
Dynamic characteristics
t
rr
reverse recovery time
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 50 A/µs;
T
j
= 25 °C;
Fig. 7
-
-
50
ns
-
-
2.2
1.6
2.75
2.1
V
V
WeEn Semiconductors
BYC75W-600P
Hyperfast power diode
Symbol
Parameter
Conditions
I
F
= 75 A; V
R
= 400 V; dI
F
/dt = 200 A/
µs; T
j
= 25 °C;
Fig. 7
I
F
= 75 A; V
R
= 400 V; dI
F
/dt = 200 A/
µs; T
j
= 125 °C;
Fig. 7
Min
-
-
Typ
42
106
Max
-
-
Unit
ns
ns
5. Pinning information
Table 2. Pinning information
Pin
1
2
mb
Symbol Description
K
A
mb
cathode
anode
mounting base; connected to
cathode
Simplified outline
Graphic symbol
K
A
001aaa020
1
2
TO-247 (SOD142)
6. Ordering information
Table 3. Ordering information
Type number
BYC75W-600P
Package
Name
TO-247
Description
Plastic Single-ended through-hole package; Heatsink mounted;
1 mounting hole; 2-lead TO-247
Version
SOD142
7. Marking
Table 4. Marking codes
Type number
BYC75W-600P
Marking code
BYC75W-600P
BYC75W-600P
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
29 April 2016
2 / 10
WeEn Semiconductors
BYC75W-600P
Hyperfast power diode
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
Parameter
repetitive peak reverse
voltage
crest working reverse
voltage
reverse voltage
average forward current
repetitive peak forward
current
non-repetitive peak
forward current
DC
δ = 0.5 ; T
mb
≤ 56 °C; square-wave
pulse;
Fig. 1; Fig. 2; Fig. 3
δ = 0.5 ; t
p
= 25 µs; T
mb
≤ 56 °C; square-
wave pulse
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave
pulse;
Fig. 4
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave
pulse;
Fig. 4
T
stg
T
j
280
P
tot
(W)
210
0.2
140
0.1
80
70
0.5
Conditions
Min
-
-
-
-
-
-
-
-55
-
Max
600
600
600
75
150
700
750
175
175
Unit
V
V
V
A
A
A
A
°C
°C
storage temperature
junction temperature
aaa263-001
δ=1
200
P
tot
(W)
160
4.0
2.2
2.8
aaa263-002
a = 1.57
1.9
120
40
0
0
20
40
60
80
100
120
I
F(AV)
(A)
0
0
10
20
30
40
50
60
70
I
F(AV)
(A)
80
I
F(AV)
= I
F(RMS)
× √δ
V
o
= 1.547 V; R
s
= 0.007 Ω
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform; maximum
values
a = form factor = I
F(RMS)
/ I
F(AV)
V
o
= 1.547 V; R
s
= 0.007 Ω
Fig. 2. Forward power dissipation as a function
of average forward current; sinusoidal waveform;
maximum values
BYC75W-600P
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
29 April 2016
3 / 10
WeEn Semiconductors
BYC75W-600P
Hyperfast power diode
I
F(AV)
(A)
100
56°C
aaa263-003
10
4
IF(AV)
I
FSM
(A)
(A)
aaa263-004
80
60
10
3
40
I
F
20
t
p
T
j(init)
= 25 °C max
10
-4
10
-3
t
p
(s)
10
-2
I
FSM
t
10
2
10
-5
0
-50
0
50
100
150
200
T
mb
(°C)
Fig. 3. Forward current as a function of mounting base
temperature; maximum values
Fig. 4. Non-repetitive peak forward current as a function
of pulse width; sinusoidal waveform; maximum values
BYC75W-600P
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
29 April 2016
4 / 10
WeEn Semiconductors
BYC75W-600P
Hyperfast power diode
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol
R
th(j-mb)
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient free air
10
Z
th(j-mb)
(K/W)
1
Conditions
full cycles;
Fig. 5
Min
-
Typ
-
Max
0.6
Unit
K/W
R
th(j-a)
in free air
-
45
-
K/W
aaa263-005
10
-1
10
-2
δ = 0.5
δ = 0.3
δ = 0.1
δ = 0.05
single pulse
t
p
10
-3
10
-2
10
-1
1
P
δ=
t
p
T
10
-3
t
T
t
p
(s)
10
10
-4
10
-6
10
-5
10
-4
Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
BYC75W-600P
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
29 April 2016
5 / 10
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