SMAJ HV SERIES
Taiwan Semiconductor
CREAT BY ART
400W, 200V - 440V Surface Mount Transient Voltage Suppressor
FEATURES
- Low profile package
- Ideal for automated placement
- Glass passivated junction
- Excellent clamping capability
- Fast response time: Typically less than 1.0ps
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
DO-214AC (SMA)
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound: UL flammability classification rating 94V-0
Packing code with suffix "G" means Green compound (halogen-free)
Moisture sensitivity level: level 1, per J-STD-020
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:
Indicated by cathode band
Weight:
0.06 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
Peak power dissipation at T
A
=25°C, Tp=1ms (Note 1)
Steady state power dissipation
mm
PARAMETER
SYMBOL
P
PK
P
D
en
PACKAGE
SMA
SMA
SMA
PACKING CODE
SUFFIX
G
de
VALUE
400
1
40
3.5 / 5.0
- 55 to +150
- 55 to +150
UNIT
W
W
A
V
°C
°C
I
FSM
V
F
T
J
T
STG
PACKING
1,800 / 7" Plastic reel
7,500 / 13" Paper reel
7,500 / 13" Plastic reel
DESCRIPTION
Green compound
Version: H1602
Maximum instantaneous forward voltage at 25 A for
Unidirectional only (Note 2)
Operating junction temperature range
Storage temperature range
Note 1: Non-repetitive current pulse per fig. 3 and derated above T
A
=25°C per fig. 2
Note 2: V
F
<3.5V for V
WM
≤250V,
V
F
<5.0V for V
WM
>250V
Devices for Bipolar Applications
1. For bidirectional use CA suffix
2. Electrical characteristics apply in both directions
ORDERING INFORMATION
PART NO.
SMAJxxxx
(Note 1)
PACKING CODE
R3
R2
M2
G
PACKING CODE
SUFFIX
Note 1: "xxxx" defines voltage from 200V (SMAJ200A) to 440V (SMAJ440A)
EXAMPLE
EXAMPLE P/N
SMAJ200A R3G
PART NO.
SMAJ200A
PACKING CODE
R3
No
tR
eco
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
d
SMAJ HV SERIES
Taiwan Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
FIG. 1 PEAK PULSE POWER RATING CURVE
100
Non-repetitive
pulse waveform
shown in fig.3
10
125
PEAK PULSE POWER(P
PP
) OR CURRENT (I
PP
)
A
DERATING IN PERCENTAGE (%)
FIG.2 PULSE DERATING CURVE
P
PPM
, PEAK PULSE POWER, KW
100
75
50
1
25
0.1
0.1
1
10
100
1000
10000
0
0
25
50
75
100
125
150
175
200
tp, PULSE WIDTH, (μs)
T
A
, AMBIENT TEMPERATURE (
°
C)
140
PEAK PULSE CURRENT (%)
120
100
80
60
40
20
0
0
td
0.5
tr=10μs
Peak value
I
PPM
en
40
3.5
Pulse width(td) is defined
as the point where the peak
current decays to 50% of I
PPM
IFSM, PEAK FORWARD SURGE CURRENT (A)
50
de
1
FIG. 3 CLAMPING POWER PULSE WAVEFORM
FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT UNIDIRECTIONAL ONLY
d
10
8.3ms single half sine wave
10/1000μs, waveform
as defined by R.E.A.
eco
3
4
t, TIME ms
tR
1
1.5
2
2.5
mm
30
20
10
0
100
NUMBER OF CYCLES AT 60 Hz
100
Half value-I
PPM
/2
FIG. 5 TYPICAL JUNCTION CAPACITANCE
10000
CJ, JUNCTION CAPACITANCE (pF)
A
1000
100
f=1.0MHz
Vsig=50mVp-p
10
1
10
V(
BR
), BREAKDOWN VOLTAGE (V)
Measured at
stand-off
voltage,Vwm
No
Measured at
zero bias
Version: H1602
SMAJ HV SERIES
Taiwan Semiconductor
Device
Device
Marking
Code
BI
SMAJ200CA
SMAJ220CA
SMAJ250CA
SMAJ300CA
SMAJ350CA
SMAJ400CA
SMAJ440CA
UNI
SV
SX
SZ
TE
TG
TK
TM
BI
SVC
SXC
SZC
TEC
TGC
TKC
TMC
Working
Peak
Reverse
Voltage
V
WM
(V)
200
220
250
300
350
400
440
Breakdown Voltage
V
BR
(V)
at I
T
Min
224
246
279
335
391
447
492
Max
247
272
309
371
432
494
543
Test
Current
I
T
(mA)
1
1
1
1
1
1
1
Maximum
Clamping
Voltage
at I
PPM
Vc (V)
324
356
405
486
567
648
713
Maximum
Peak Pulse
Surge Current
I
PPM
(A)
1.2
1.1
1.0
0.8
0.7
0.6
0.6
Maximum
Reverse
Leakage
@ V
WM
I
R
(μA)
1
1
1
1
1
1
1
UNI
SMAJ200A
SMAJ220A
SMAJ250A
SMAJ300A
SMAJ350A
SMAJ400A
SMAJ440A
Notes:
1. Non-repetitive current pulse, per fig. 3 and derated above T
A
=25°C per fig. 2
2. Measure on 8.3ms single half sine-wave duty cycle=4 pulses per minutes maximum
3. Peak pulse power waveform is 10/1000
μs
No
tR
eco
mm
Version: H1602
en
de
d
SMAJ HV SERIES
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DO-214AC(SMA)
DIM.
A
B
C
D
E
F
G
H
Unit (mm)
Min
1.27
4.06
2.29
1.99
0.90
4.95
0.10
0.15
Max
1.58
4.60
2.83
2.50
1.41
5.33
0.20
0.31
Unit (inch)
Min
0.050
0.160
0.090
0.078
0.035
0.195
0.004
0.006
Max
0.062
0.181
0.111
0.098
0.056
0.210
0.008
0.012
Symbol
A
B
en
1.68
1.52
3.93
2.41
5.45
C
E
D
de
Unit (mm)
Unit (inch)
0.066
0.060
0.155
0.095
0.215
P/N =
G=
F=
YW =
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
Note: Cathode band for uni-directional products only
No
tR
Date Code
eco
Device Marking Code
Green Compound
Factory Code
mm
d
Version: H1602
SMAJ HV SERIES
Taiwan Semiconductor
CREAT BY ART
No
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Version: H1602
tR
eco
mm
en
de
d
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