• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
APPLICATIONS
•
•
•
•
Synchronous buck
DC/DC conversion
Half bridge
POL
D
1
PRODUCT SUMMARY
MOSFET CHANNEL-1 AND CHANNEL-2
V
DS
(V)
R
DS(on)
max. () at V
GS
= 10 V
R
DS(on)
max. () at V
GS
= 4.5 V
Q
g
typ. (nC)
I
D
(A)
a, d
Configuration
30
0.00675
0.00944
6.3
30
Dual
G
1
N-Channel 1
MOSFET
S
1
/D
2
G
2
N-Channel 2
MOSFET
S
2
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAIR 3 x 3
SiZ350DT-T1-GE3
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-source voltage
Gate-source voltage
T
C
= 25 °C
Continuous drain current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed drain current (t = 100 μs)
Continuous source current (MOSFET diode conduction)
Single pulse avalanche current
Single pulse avalanche energy
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
Maximum power dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating junction and storage temperature range
Soldering recommendations (peak temperature)
Notes
a. Package limited
b. Surface mounted on 1" x 1" FR4 board
c. t = 10 s
d. T
C
= 25 °C
S17-1893-Rev. A, 25-Dec-17
Document Number: 76540
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
T
J
, T
stg
P
D
I
DM
I
S
I
AS
E
AS
I
D
CHANNEL-1 AND CHANNEL-2
SYMBOL
V
DS
V
GS
LIMIT
30
+16 / -12
30
a
30
a
18.5
b, c
14.8
b, c
100
13.9
3.1
b, c
10
5
16.7
10.7
3.7
b, c
2.4
b, c
-55 to +150
260
°C
W
mJ
A
UNIT
V
SiZ350DT
www.vishay.com
Vishay Siliconix
CHANNEL-1 AND CHANNEL-2
SYMBOL
TYPICAL
27
6
MAXIMUM
34
7.5
UNIT
°C/W
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient
a, b
t
10 s
Steady state
R
thJA
R
thJC
Maximum junction-to-case (drain)
Notes
a. Surface mounted on 1" x 1" FR4 board
b. Maximum under steady state conditions is 69 °C/W
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current
a
Drain-source on-state resistance
a
Forward transconductance
a
Dynamic
b
Input capacitance
Output capacitance
Reverse transfer capacitance
C
rss
/C
iss
ratio
Total gate charge
Gate-source charge
Gate-drain charge
Gate resistance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 1
,
I
D
14.8 A,
V
GEN
= 4.5 V, R
g
= 1
V
DD
= 15 V, R
L
= 1
,
I
D
14.8 A,
V
GEN
= 10 V, R
g
= 1
f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 18.5 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 18.5 A
C
iss
C
oss
C
rss
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
-
-
-
-
-
-
-
-
0.2
-
-
-
-
-
-
-
-
940
375
40
0.043
13.5
6.3
2.8
1.2
0.8
10
25
15
10
15
45
10
25
-
-
-
0.086
20.3
10
-
-
1.6
20
50
30
20
30
68
20
50
ns
nC
pF
V
DS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= +16 V / -12 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 15 A
V
GS
= 4.5 V, I
D
= 10 A
V
DS
= 10 V, I
D
= 15 A
30
1
-
-
-
40
-
-
-
-
-
-
-
-
-
0.00563
0.00787
46
-
2.4
± 100
1
5
-
0.00675
0.00944
-
V
nA
μA
A
S
CHANNEL-1 AND CHANNEL-2
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
S17-1893-Rev. A, 25-Dec-17
Document Number: 76540
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiZ350DT
www.vishay.com
Vishay Siliconix
CHANNEL-1 AND CHANNEL-2
SYMBOL
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 14.8 A, di/dt = 100 A/μs,
T
J
= 25 °C
I
S
= 14.8 A, V
GS
= 0 V
TEST CONDITIONS
T
C
= 25°C
MIN.
-
-
-
-
-
-
-
TYP.
-
-
0.85
30
30
17
13
MAX.
13.9
100
1.2
45
45
-
-
UNIT
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Drain-source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
A
V
ns
nC
ns
Notes
a. Pulse test; pulse width
300 μs, duty cycle
2 %
b. Guaranteed by design, not subject to production testing
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-1893-Rev. A, 25-Dec-17
Document Number: 76540
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiZ350DT
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
100
V
GS
= 10 V thru 5 V
Vishay Siliconix
Axis Title
10000
50
10000
80
2nd line
I
D
- Drain Current (A)
V
GS
= 4 V
40
2nd line
I
D
- Drain Current (A)
1000
1st line
2nd line
T
C
= 125 °C
1000
1st line
2nd line
60
30
40
100
V
GS
= 3 V
20
T
C
= 25 °C
100
20
10
T
C
= -55 °C
0
0
0.4
0.8
1.2
1.6
2
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
0
0
1
2
3
4
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Output Characteristics
Transfer Characteristics
Axis Title
0.020
10000
1200
Axis Title
10000
C
iss
2nd line
R
DS(on)
- On-Resistance (Ω)
2nd line
C - Capacitance (pF)
0.015
1000
0.010
V
GS
= 4.5 V
V
GS
= 10 V
900
1000
600
C
oss
1st line
2nd line
100
0.005
100
300
C
rss
0
0
20
40
I
D
- Drain Current (A)
2nd line
60
80
10
0
0
5
10
15
20
25
30
V
DS
- Drain-to-Source Voltage (V)
2nd line
10
On-Resistance vs. Drain Current and Gate
Capacitance
Axis Title
10
I
D
= 18.5 A
Axis Title
10000
2nd line
R
DS(on)
- On-Resistance (Normalized)
1.6
V
GS
= 10 V, I
D
= 18 A
10000
2nd line
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 12.5 V
8
V
DS
= 6 V
1.4
1000
1.2
V
GS
= 4.5 V,
I
D
= 15 A
1000
1st line
2nd line
4
V
DS
= 20 V
100
2
100
1.0
0
0
3
6
9
12
15
Q
g
- Total Gate Charge (nC)
2nd line
10
0.8
-50
-25
0
25
50
75
100 125 150
T
J
- Junction Temperature (°C)
2nd line
10
Gate Charge
On-Resistance vs. Junction Temperature
S17-1893-Rev. A, 25-Dec-17
Document Number: 76540
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1st line
2nd line
6
1st line
2nd line
SiZ350DT
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Axis Title
100
10000
0.020
Axis Title
10000
Vishay Siliconix
10
2nd line
I
S
- Source Current (A)
T
J
= 150 °C
2nd line
R
DS(on)
- On-Resistance (Ω)
0.015
1000
0.010
T
J
= 150 °C
T
J
= 25 °C
1000
1st line
2nd line
T
J
= 25 °C
0.1
100
0.01
100
0.005
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
2nd line
10
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
2nd line
10
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
1.9
I
D
= 250 μA
10000
50
1.7
2nd line
V
GS(th)
(V)
40
1000
1st line
2nd line
Power (W)
1.5
30
1.3
100
1.1
20
10
0.9
-50
-25
0
25
50
75
100 125 150
T
J
- Temperature (°C)
2nd line
10
0
0.001
0.01
0.1
1
Time (s)
10
100
1000
Threshold Voltage
Single Pulse Power
Axis Title
1000
I
DM
limited
10000
100
2nd line
I
D
- Drain Current (A)
Limited by
R
DS(on)
1000
1st line
2nd line
100 μs
1 ms
10
1
10 ms
100 ms
10 s, 1 s
T
A
= 25 °C
Single pulse
DC
BVDSS limited
100
0.1
0.01
0.1
(1)
10
1
10
100
V
DS
- Drain-to-Source Voltage (V)
V
GS
> minimum V
GS
at which R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
S17-1893-Rev. A, 25-Dec-17
Document Number: 76540
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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