Datasheet
Serial EEPROM Series Industrial EEPROM
125℃ Operation Microwire BUS EEPROM (3-wire)
BR93H86RF-2LB
General Description
This is the product guarantees long time support in
Industrial market.
BR93H86RF-2LB is a serial EEPROM of serial 3-line
interface method.
Package
W(Typ.) x D(Typ.) x H(Max.)
Features
Long Time Support a Product for Industrial
Applications.
Conforming to Microwire BUS
Withstands Electrostatic Voltage up to 6kV
(HBM method typ）
Wide Temperature Range -40℃ to +125℃
Same package line-up and same pin configuration
2.5V to 5.5V Single Supply Voltage Operation
Address Auto Increment Function at READ
Operation
Prevention of write mistake
Write prohibition at power on
Write prohibition by command code
Write mistake prevention circuit at low voltage
Self-timed programming cycle
Program Condition Display by READY / BUSY
Low Supply Current
Write Operation (5V) : 0.8mA (Typ)
Read Operation (5V) : 0.5mA (Typ)
Standby Operation (5V) : 0.1μA (Typ)
Compact package
High Reliability using ROHM Original
Double-Cell Structure
More than 100 years data retention
More than 1 million write cycles
Data set to FFFFh on all addresses at shipment
SOP8
5.00mm x 6.20mm x 1.71mm
Application
Industrial Equipment
BR93H86RF-2LB
Capacity
16Kbit
Bit Format
1K×16
Product Name
BR93H86RF-2LB
Supply Voltage
2.5V to 5.5V
Package
SOP8
〇Product
structure : Silicon monolithic integrated circuit
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© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
〇This
product has no designed protection against radioactive rays
1/25
TSZ02201-0R1R0G100290-1-2
27.Feb.2014 Rev.002
BR93H86RF-2LB
Absolute Maximum Ratings (Ta=25℃)
Parameter
Supply Voltage
Permissible Dissipation
Storage Temperature Range
Operating Temperature Range
Input Voltage/Output Voltage
Symbol
V
CC
Pd
Tstg
Topr
‐
Limit
-0.3 to +6.5
0.56
-65 to +150
-40 to +125
-0.3 to V
CC
+0.3
Unit
V
W
℃
℃
V
Remarks
Datasheet
When using at Ta=25℃ or higher 4.5mW to be reduced per 1℃.
Memory Cell Characteristics (V
CC
=2.5V to 5.5V)
Limit
Parameter
Min
1,000,000
Write Cycles
(1)
500,000
300,000
100
Data Retention
(1)
60
50
(1) Not 100% TESTED
Unit
Typ
-
-
-
-
-
-
Max
-
-
-
-
-
-
Cycles
Cycles
Cycles
Years
Years
Years
Conditions
Ta≦85℃
Ta≦105℃
Ta≦125℃
Ta≦25℃
Ta≦105℃
Ta≦125℃
Recommended Operating Conditions
Parameter
Supply Voltage
Input Voltage
Symbol
V
CC
V
IN
Limit
2.5 to 5.5
V
Unit
0 to V
CC
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TSZ02201-0R1R0G100290-1-2
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BR93H86RF-2LB
DC Characteristics
(Unless otherwise specified, Ta=-40℃ to +125℃, V
CC
=2.5V to 5.5V)
Limit
Parameter
Symbol
Min
Input Low Voltage
Input High Voltage
Output Low Voltage 1
Output Low Voltage 2
Output High Voltage 1
Output High Voltage 2
Input Leak Current
Output Leak Current
V
IL
V
IH
V
OL1
V
OL2
V
OH1
V
OH2
I
LI
I
LO
I
CC1
Supply Current
I
CC2
I
CC3
Standby Current
I
SB
-0.3
0.7xV
CC
0
0
2.4
V
CC
-0.2
-10
-10
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
Max
0.3xV
CC
V
CC
+0.3
0.4
0.2
V
CC
V
CC
10
10
3.0
1.5
3.0
10
V
V
V
V
V
V
μA
μA
mA
mA
mA
μA
Unit
Datasheet
Conditions
I
OL
=2.1mA, 4.0V≦V
CC
≦5.5V
I
OL
=100μA
I
OH
=-0.4mA, 4.0V≦V
CC
≦5.5V
I
OH
=-100μA
V
IN
=0V to V
CC
V
OUT
=0V to V
CC
, CS=0V
f
SK
=2MHz, t
E/W
=4ms (WRITE)
f
SK
=2MHz (READ)
f
SK
=2MHz, t
E/W
=4ms (WRAL)
C
S
=0V, DO=OPEN
AC Characteristics
(Unless otherwise specified, Ta=-40℃ to +125℃, V
CC
=2.5V to 5.5V)
Parameter
SK Frequency
SK “H” Time
SK “L” Time
CS “L” Time
CS Setup Time
DI Setup Time
CS Hold Time
DI Hold Time
Data “1” Output Delay Time
Data “0” Output Delay Time
Time from CS to Output establishment
Time from CS to High-Z
Write Cycle Time
Symbol
f
SK
t
SKH
t
SKL
t
CS
t
CSS
t
DIS
t
CSH
t
DIH
t
PD1
t
PD0
t
SV
t
DF
t
E/W
Min
-
200
200
200
50
50
0
50
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
2
-
-
-
-
-
-
-
200
200
150
150
4
Unit
MHz
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
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© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
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TSZ02201-0R1R0G100290-1-2
27.Feb.2014 Rev.002
BR93H86RF-2LB
Serial Input / Output Timing
CS
tCSS
tSKH
tSKL
tCSH
Datasheet
SK
tDIS
tDIH
DI
tPD0
tPD1
DO
(READ)
tDF
DO
(WRITE)
STATUS VALID
Figure 1. Serial Input / Output Timing Diagram
○Data
is taken from DI, in sync with the rise of SK.
○At
READ command, data is outputted from DO in sync with the rise of SK.
○After
WRITE command input, the status signal of WRITE (READY / BUSY) can be monitored from DO by setting CS to “H”
after tCS, from the fall of CS, and will display a valid status until the next command start bit is inputted. But, if CS is set to
“L”, DO sets to High-Z state.
○To
execute a series of commands, CS is set to “L” once after completion of each command for internal circuit reset
Block Diagram
CS
Command decode
Control
Power source voltage detection
SK
Clock generation
Write
prohibition
High voltage occurrence
DI
Command
register
Address
buffer
10bit
Address
decoder
10bit
16,384 bit
EEPROM
Data
register
DO
Dummy bit
16bit
R/W
amplifier
16bit
Figure 2. Block Diagram
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© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
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TSZ02201-0R1R0G100290-1-2
27.Feb.2014 Rev.002
BR93H86RF-2LB
Pin Configuration
TOP VIEW
VCC
NC
NC
GND
Datasheet
8
7
6
5
BR93H86RF-2LB
1
CS
2
SK
3
DI
4
DO
Figure 3. Pin Configuration
Pin Descriptions
Pin Number
1
2
3
4
5
6,7
8
Pin Name
CS
SK
DI
DO
GND
NC
VCC
I/O
Input
Input
Input
Output
-
-
-
Chip select input
Serial clock input
Start bit, ope code, address, and serial data input
Serial data output, READY / BUSY status output
Ground, 0V
Non connected terminal, VCC, GND or OPEN
Power supply, 2.5V to 5.5V
Function
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© 2013 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
5/25
TSZ02201-0R1R0G100290-1-2
27.Feb.2014 Rev.002
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