NVD5C478NL
Power MOSFET
40 V, 7.7 mW, 45 A, Single N−Channel
Features
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
Low Q
G
and Capacitance to Minimize Driver Losses
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V
(BR)DSS
40 V
R
DS(on)
7.7 mW @ 10 V
11.8 mW @ 4.5 V
I
D
45 A
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent R
qJC
(Notes 1 & 3)
Power Dissipation R
qJC
(Note 1)
Continuous Drain
Current R
qJA
(Notes 1, 2 & 3)
Power Dissipation R
qJA
(Notes 1 & 2)
Pulsed Drain Current
Steady
State
T
C
= 25°C
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
I
DM
T
J
, T
stg
I
S
E
AS
T
L
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
40
"20
45
32
30
15
14
9.9
3.0
1.5
220
−55 to
175
25
98
260
A
°C
A
mJ
°C
W
A
W
Unit
V
V
A
D
G
S
N−CHANNEL MOSFET
4
1 2
3
DPAK
CASE 369C
STYLE 2
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, I
L(pk)
= 3.4 A)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
AYWW
5C
478NLG
2
1 Drain 3
Gate Source
A
= Assembly Location
Y
= Year
WW
= Work Week
5C478NL = Device Code
G
= Pb−Free Package
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain) (Note 1)
Junction−to−Ambient − Steady State (Note 2)
Symbol
R
qJC
R
qJA
Value
5.0
50
Unit
°C/W
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2017
1
January, 2018 − Rev. 0
Publication Order Number:
NVD5C478NL/D
NVD5C478NL
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
V
GS
= 0 V,
V
DS
= 40 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
40
19
10
250
100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Drain−to−Source On Resistance
Forward Transconductance
I
GSS
V
DS
= 0 V, V
GS
= 20 V
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
R
DS(on)
g
FS
V
GS
= V
DS
, I
D
= 30
mA
1.2
4.8
2.2
V
mV/°C
V
GS
= 4.5 V, I
D
= 15 A
V
GS
= 10 V, I
D
= 15 A
V
DS
= 3 V, I
D
= 15 A
9.4
6.4
45
11.8
7.7
mW
mW
S
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
SWITCHING CHARACTERISTICS
(Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 15 A
T
J
= 25°C
T
J
= 125°C
0.88
0.73
29
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 15 A
13
15
20
nC
ns
1.2
V
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 10 V, V
DS
= 32 V,
I
D
= 15 A, R
G
= 2.5
W
7.0
16
21
3.0
ns
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GP
V
GS
= 10 V, V
DS
= 32 V,
I
D
= 15 A
V
GS
= 4.5 V, V
DS
= 32 V,
I
D
= 15 A
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 25 V
1100
410
25
9.5
20
2.1
3.6
3.3
3.1
V
nC
nC
pF
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
RR
ta
tb
Q
RR
4. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NVD5C478NL
TYPICAL CHARACTERISTICS
70
4.0 V
60
I
D
, DRAIN CURRENT (A)
V
GS
= 10 V to 4.5 V
50
40
30
20
10
0
0
1
2
3
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (mW)
2.8 V
3.2 V
3.6 V
I
D
, DRAIN CURRENT (A)
60
50
40
30
20
10
0
0
1
T
J
= 125°C
2
T
J
= −55°C
3
4
5
T
J
= 25°C
70
V
DS
= 3 V
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
20
I
D
= 15 A
T
J
= 25°C
15
Figure 2. Transfer Characteristics
20
T
J
= 25°C
15
10
10
V
GS
= 4.5 V
V
GS
= 10 V
5
5
0
3
4
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
0
5
6
7
8
9
10
I
D
, DRAIN CURRENT (A)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.0
I
D
= 15 A
V
GS
= 10 V
I
DSS
, LEAKAGE (nA)
1.5
100K
10K
1K
100
10
1
0.1
0
−50 −25
0.01
0
25
50
75
100
125
150
175
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
T
J
= 175°C
T
J
= 150°C
T
J
= 125°C
T
J
= 85°C
1.0
0.5
T
J
= 25°C
5
10
15
20
25
30
35
40
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NVD5C478NL
TYPICAL CHARACTERISTICS
10K
10
9
8
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
18
20
Q
g
, TOTAL GATE CHARGE (nC)
V
DS
= 32 V
I
D
= 15 A
T
J
= 25°C
Q
gs
Q
gd
C
iss
1K
C
oss
100
T
J
= 25°C
V
GS
= 0 V
f = 1 MHz
10
0
5
10
15
20
25
30
35
40
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
C
rss
Figure 7. Capacitance Variation
1K
I
S
, SOURCE CURRENT (A)
100
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
Figure 8. Gate−to−Source Voltage vs. Total
Charge
V
GS
= 0 V
100
t, TIME (ns)
t
d(off)
t
f
t
r
t
d(on)
10
10
1
1
V
GS
= 10 V
V
DS
= 32 V
I
D
= 25 A
1
10
R
G
, GATE RESISTANCE (W)
100
0.1
0.1
T
J
= 125°C
0.3
0.4
0.5
T
J
= 25°C
0.6
0.7
0.8
T
J
= −55°C
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
100
Figure 10. Diode Forward Voltage vs. Current
I
D
, DRAIN CURRENT (A)
100
10
ms
10
T
C
= 25°C
V
GS
≤
10 V
Single Pulse
R
DS(on)
Limit
Thermal Limit
Package Limit
0.1
1
10
I
PEAK
(A)
10
T
J(initial)
= 25°C
1
0.5 ms
1 ms
10 ms
1
T
J(initial)
= 100°C
0.1
0.1
100
1000
0.00001
0.0001
0.001
0.01
TIME IN AVALANCHE (s)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVD5C478NL
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
10
R(t) (°C/W)
1
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.001
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (sec)
0.1
1
10
100
1000
Figure 13. Thermal Response
ORDERING INFORMATION
Order Number
NVD5C478NLT4G
Package
DPAK
(Pb−Free)
Shipping
†
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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