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BU52075GWZ-E2

产品描述Board Mount Hall Effect / Magnetic Sensors Omnipolar Detection Hall IC Dual Outputs
产品类别传感器    传感器/换能器   
文件大小1MB,共20页
制造商ROHM(罗姆半导体)
官网地址https://www.rohm.com/
标准
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BU52075GWZ-E2概述

Board Mount Hall Effect / Magnetic Sensors Omnipolar Detection Hall IC Dual Outputs

BU52075GWZ-E2规格参数

参数名称属性值
是否Rohs认证符合
厂商名称ROHM(罗姆半导体)
Reach Compliance Codecompliant
Factory Lead Time13 weeks
Samacsys DescriptionBoard Mount Hall Effect / Magnetic Sensors Omnipolar Detection Hall IC Dual Outputs
主体宽度0.8 mm
主体高度0.4 mm
主体长度或直径0.8 mm
滞后0.9 mT
最大磁场范围11.6 mT
最小磁场范围6.5 mT
安装特点SURFACE MOUNT
最大工作电流0.008 mA
最高工作温度85 °C
最低工作温度-40 °C
输出范围1.60-0.20V
输出类型DIGITAL VOLTAGE
封装形状/形式SQUARE
传感器/换能器类型MAGNETIC FIELD SENSOR,HALL EFFECT
最大供电电压3.6 V
最小供电电压1.65 V
表面贴装YES
端接类型SOLDER
Base Number Matches1

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Datasheet
Omnipolar Detection Hall IC
(Dual Outputs for both S and N Pole Polarity Detection)
BU52075GWZ
General Description
The BU52075GWZ is omnipolar Hall IC incorporating a
polarity determination circuit that enables separate
operation (output) of both the South and North poles.
The polarity judgment is based on the output processing
configuration.
This Hall IC product can be in tablets, smart phones, and
other applications in order to detect open and close of
the cover.
And this Hall IC product can be in digital video cameras
and other applications involving display panels in order
to detect the front/back location or determine the
rotational direction of the panel.
Key Specifications
V
DD
Voltage Range:
Operate Point:
Hysteresis:
Period:
Supply Current (AVG):
Output Type:
Operating Temperature Range:
1.65V to 3.6V
±9.5mT(Typ)
0.9mT(Typ)
50ms(Typ)
5.0µA (Typ)
CMOS
-40°C to +85°C
Package
UCSP35L1
W(Typ) x D(Typ) x H(Max)
0.80mm x 0.80mm x 0.40mm
Features
Omnipolar Detection (Polarity Detection for both S
and N Poles with Separate, Dual Outputs)
Micro Power Operation (Small Current Using
Intermittent Operation Method)
Ultra-compact CSP4 Package (UCSP35L1)
Polarity Judgment and Separate Output on both
Poles
(OUT1=S-pole Output; OUT2=N-pole Output)
High ESD Resistance 8kV(HBM)
Applications
Tablets, Smart Phones, Notebook Computers,
Digital Video Cameras, Digital Still Cameras, etc.
Typical Application Circuit, Block Diagram, Pin Configurations and Pin Descriptions
V
DD
B1
0.1µF
TIMING
LOGIC
HALL
ELEMENT
×
LATCH
Adjust the bypass capacitor value
as necessary, according to voltage
noise conditions, etc.
B2 OUT1
GND
V
DD
DYNAMIC
OFFSET
CANCELLATION
The CMOS output terminals
enable direct connection to
the PC, with no external
pull-up resistor required.
SAMPLE
& HOLD
LATCH
A2 OUT2
A1
GND
Pin No.
A1
A2
B1
B2
Pin Name
GND
OUT2
V
DD
OUT1
Ground
Function
(TOP VIEW)
A1
A2
(BOTTOM VIEW)
A2
A1
Output (React to the north pole)
Power supply
B1
Output (React to the south pole)
〇This
product has no designed protection against radioactive rays
B2
B2
B1
〇Product
structure : Silicon monolithic integrated circuit
.
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111 • 14 • 001
1/16
TSZ02201-0M2M0F414030-1-2
17.Oct.2014 Rev.001

 
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