86B
CY7C1386B
CY7C1387B
512K x 36/1M x 18 Pipelined DCD SRAM
Features
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Fast clock speed: 200, 167, 150, 133 MHz
Provide high-performance 3-1-1-1 access rate
Fast OE access times: 3.0, 3.4, 3.8, and 4.2 ns
Optimal for depth expansion
3.3V (–5% / +10%) power supply
Common data inputs and data outputs
Byte Write Enable and Global Write control
Double-cycle deselect
Chip enable for address pipeline
Address, data, and control registers
Internally self-timed Write cycle
Burst control pins (interleaved or linear burst
sequence)
Automatic power-down available using ZZ mode or CE
deselect
High-density, high-speed packages
JTAG boundary scan for BGA packaging version
Automatic power down available using ZZ mode or CE
deselect
registers controlled by a positive-edge-triggered Clock Input
(CLK). The synchronous inputs include all addresses, data
inputs, address-pipelining Chip Enables (CEs), burst control
inputs (ADSC, ADSP, and ADV), Write Enables (BWa, BWb,
BWc, BWd and BWE), and Global Write (GW).
Asynchronous inputs include the Output Enable (OE) and
burst mode control (MODE). DQ
a,b,c,d
and DP
a,b,c,d
apply to
CY7C1386B and DQ
a,b
and DP
a,b
apply to CY7C1387B. a, b,
c, and d each are 8 bits wide in the case of DQ and 1 bit wide
in the case of DP.
Addresses and chip enables are registered with either
Address Status Processor (ADSP) or Address Status
Controller (ADSC) input pins. Subsequent burst addresses
can be internally generated as controlled by the Burst Advance
Pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate self-timed Write cycles. Write cycles can be one to
four bytes wide as controlled by the write control inputs.
Individual byte write allows individual byte to be written. BWa
controls DQa and DQPa. BWb controls DQb and DQPb. BWc
controls DQc and DQPd. BWd controls DQd–DQd and DQPd.
BWa, BWb, BWc, and BWd can be active only with BWE LOW.
GW LOW causes all bytes to be written. Write pass-through
capability allows written data available at the output for the
immediately next Read cycle. This device also incorporates
pipelined enable circuit for easy depth expansion without
penalizing system performance.
The CY7C1386B and CY7C1387B are both double-cycle
deselect parts. All inputs and outputs of the CY7C1386B and
the CY7C1387B are JEDEC-standard JESD8-5-compatible.
Functional Description
The Cypress Synchronous Burst SRAM family employs
high-speed, low-power CMOS designs using advanced
single-layer polysilicon, triple-layer metal technology. Each
memory cell consists of six transistors.
The CY7C1386B and CY7C1387B SRAMs integrate
524,288 × 36 and 1,048,576 × 18 SRAM cells with advanced
synchronous peripheral circuitry and a 2-bit counter for
internal burst operation. All synchronous inputs are gated by
Selection Guide
200 MHz
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
3
315
20
167 MHz
3.4
285
20
150 MHz
3.8
265
20
133 MHz
4.2
245
20
Unit
ns
mA
mA
Cypress Semiconductor Corporation
Document #: 38-05195 Rev. **
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3901 North First Street
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San Jose
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CA 95134 • 408-943-2600
Revised December 3, 2001
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