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CY7C1474V33-200BGXI

产品描述4M X 18 ZBT SRAM, 3 ns, PQFP100
产品类别存储   
文件大小731KB,共40页
制造商Cypress(赛普拉斯)
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CY7C1474V33-200BGXI概述

4M X 18 ZBT SRAM, 3 ns, PQFP100

4M × 18 ZBT 静态随机存储器, 3 ns, PQFP100

CY7C1474V33-200BGXI规格参数

参数名称属性值
功能数量1
端子数量100
最大工作温度70 Cel
最小工作温度0.0 Cel
最大供电/工作电压3.6 V
最小供电/工作电压3.14 V
额定供电电压3.3 V
最大存取时间3 ns
加工封装描述14 × 20 MM, 1.40 MM HEIGHT, 铅 FREE, MS-026, TQFP-100
无铅Yes
欧盟RoHS规范Yes
中国RoHS规范Yes
状态ACTIVE
工艺CMOS
包装形状矩形的
包装尺寸FLATPACK, 低 PROFILE
表面贴装Yes
端子形式GULL WING
端子间距0.6500 mm
端子涂层MATTE 锡
端子位置
包装材料塑料/环氧树脂
温度等级COMMERCIAL
内存宽度18
组织4M × 18
存储密度7.55E7 deg
操作模式同步
位数4.19E6 words
位数4M
内存IC类型ZBT 静态随机存储器
串行并行并行

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CY7C1470V33
CY7C1472V33
CY7C1474V33
72-Mbit (2M × 36/4M × 18/1M × 72)
Pipelined SRAM with NoBL™ Architecture
72-Mbit (2M × 36/4M × 18/1M × 72) Pipelined SRAM with NoBL™ Architecture
Features
Functional Description
The CY7C1470V33, CY7C1472V33, and CY7C1474V33 are
3.3 V, 2M × 36/4M × 18/1M × 72 synchronous pipelined burst
SRAMs with No Bus Latency™ (NoBL logic, respectively.
They are designed to support unlimited true back-to-back
read/write operations with no wait states. The CY7C1470V33,
CY7C1472V33, and CY7C1474V33 are equipped with the
advanced (NoBL) logic required to enable consecutive
read/write operations with data being transferred on every clock
cycle. This feature dramatically improves the throughput of data
in systems that require frequent write/read transitions. The
CY7C1470V33, CY7C1472V33, and CY7C1474V33 are pin
compatible and functionally equivalent to ZBT devices.
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. All data outputs pass through output
registers controlled by the rising edge of the clock. The clock
input is qualified by the clock enable (CEN) signal, which when
deasserted suspends operation and extends the previous clock
cycle.
Write operations are controlled by the byte write selects
(BW
a
–BW
h
for CY7C1474V33, BW
a
–BW
d
for CY7C1470V33
and BW
a
–BW
b
for CY7C1472V33) and a write enable (WE)
input. All writes are conducted with on-chip synchronous self
timed write circuitry.
Three synchronous chip enables (CE
1
, CE
2
, CE
3
) and an
asynchronous output enable (OE) provide for easy bank
selection and output tristate control. In order to avoid bus
contention, the output drivers are synchronously tristated during
the data portion of a write sequence.
For a complete list of related documentation, click
here.
Pin compatible and functionally equivalent to ZBT
Supports 200 MHz Bus operations with zero wait states
Available speed grades are 200 and 167 MHz
Internally self timed output buffer control to eliminate the need
to use asynchronous OE
Fully registered (inputs and outputs) for pipelined operation
Byte write capability
Single 3.3 V power supply
3.3 V/2.5 V I/O power supply
Fast clock-to-output time
3.0 ns (for 200 MHz device)
Clock enable (CEN) pin to suspend operation
Synchronous self timed writes
CY7C1470V33 available in JEDEC-standard Pb-free 100-pin
TQFP, and non Pb-free 165-ball FBGA package.
CY7C1472V33 available in JEDEC-standard Pb-free 100-pin
TQFP. CY7C1474V33 available in non Pb-free 209-ball FBGA
package
IEEE 1149.1 JTAG boundary scan compatible
Burst capability – linear or interleaved burst order
“ZZ” sleep mode option and stop clock option
Selection Guide
Description
Maximum access time
Maximum operating current
Maximum CMOS standby current
200 MHz
3.0
500
120
167 MHz
3.4
450
120
Unit
ns
mA
mA
Errata:
For information on silicon errata, see
Errata on page 35.
Details include trigger conditions, devices affected, and proposed workaround.
Cypress Semiconductor Corporation
Document Number: 38-05289 Rev. *X
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised January 5, 2018
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