Si532
R
EVISION
D
D
U A L
F
REQUENCY
C
R Y S TA L
O
SCILLATOR
(XO )
(10 M H
Z TO
1.4 G H
Z
)
Features
Available with any-frequency output
frequencies from 10 MHz to 945 MHz
and select frequencies to 1.4 GHz
Two selectable output frequencies
rd
®
3 generation DSPLL with superior
jitter performance
3x better frequency stability than
SAW-based oscillators
Internal fixed crystal frequency
ensures high reliability and low
aging
Available CMOS, LVPECL,
LVDS, and CML outputs
3.3, 2.5, and 1.8 V supply options
Industry-standard 5 x 7 mm
package and pinout
Pb-free/RoHS-compliant
Si5602
Ordering Information:
See page 7.
Applications
SONET/SDH
Networking
SD/HD video
Test and measurement
Clock and data recovery
FPGA/ASIC clock generation
Pin Assignments:
See page 6.
(Top View)
Description
The Si532 dual frequency XO utilizes Silicon Laboratories’ advanced
DSPLL
®
circuitry to provide a low jitter clock at high frequencies. The Si532 is
available with any-frequency output frequency from 10 to 945 MHz and select
frequencies to 1400 MHz. Unlike a traditional XO where a different crystal is
required for each output frequency, the Si532 uses one fixed crystal
frequency to provide a wide range of output frequencies. This IC based
approach allows the crystal resonator to provide exceptional frequency
stability and reliability. In addition, DSPLL clock synthesis provides superior
supply noise rejection, simplifying the task of generating low jitter clocks in
noisy environments typically found in communication systems. The Si532 IC
based XO is factory configurable for a wide variety of user specifications
including frequency, supply voltage, output format, and temperature stability.
Specific configurations are factory programmed at time of shipment, thereby
eliminating long lead times associated with custom oscillators.
FS
1
6
V
DD
OE
2
5
CLK–
GND
3
4
CLK+
(LVDS/LVPECL/CML)
FS
1
6
V
DD
Functional Block Diagram
V
DD
CLK– CLK+
OE
2
5
NC
GND
3
4
CLK
(CMOS)
Fixed
Frequency
XO
Any-frequency
10–1400 MHz
DSPLL
®
Clock
Synthesis
FS
OE
GND
Rev. 1.31 4/16
Copyright © 2016 by Silicon Laboratories
Si532
Si532
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Parameter
Supply Voltage
1
Symbol
V
DD
Test Condition
3.3 V option
2.5 V option
1.8 V option
Supply Current
I
DD
Output enabled
LVPECL
CML
LVDS
CMOS
Tristate mode
Output Enable (OE)
and Frequency Select (FS)
2
Operating Temperature Range
Min
2.97
2.25
1.71
—
—
—
—
—
0.75 x V
DD
—
–40
Typ
3.3
2.5
1.8
111
99
90
81
60
—
—
—
Max
3.63
2.75
1.89
121
108
98
88
75
—
0.5
85
Units
V
V
V
mA
mA
V
V
ºC
V
IH
V
IL
T
A
Notes:
1.
Selectable parameter specified by part number. See Section 3. "Ordering Information" on page 7 for further details.
2.
OE and FS pins include a 17 k pullup resistor to V
DD
. Pulling OE to ground causes outputs to tristate.
Table 2. CLK± Output Frequency Characteristics
Parameter
Nominal Frequency
1,2
Symbol
f
O
Test Condition
LVPECL/LVDS/CML
CMOS
Min
10
10
—
–7
–20
–50
Typ
—
—
±1.5
—
—
—
—
—
—
—
—
Max
945
160
—
+7
+20
+50
±3
±10
±20
±31.5
±61.5
Units
MHz
MHz
ppm
Initial Accuracy
Temperature Stability
1,3
f
i
Measured at +25 °C at time of
shipping
ppm
ppm
ppm
ppm
ppm
ppm
Aging
f
a
Total Stability
Frequency drift over first year
Frequency drift over 20 year life
Temp stability = ±7 ppm
Temp stability = ±20 ppm
Temp stability = ±50 ppm
—
—
—
—
—
Notes:
1.
See Section 3. "Ordering Information" on page 7 for further details.
2.
Specified at time of order by part number. Also available in frequencies from 970 to 1134 MHz and 1213 to 1417 MHz.
3.
Selectable parameter specified by part number.
4.
Time from powerup or tristate mode to f
O
.
2
Rev. 1.31
Si532
Table 2. CLK± Output Frequency Characteristics (Continued)
Parameter
Powerup Time
4
Settling Time After FS Change
Symbol
t
OSC
t
FRQ
Test Condition
Min
—
—
Typ
—
—
Max
10
10
Units
ms
ms
Notes:
1.
See Section 3. "Ordering Information" on page 7 for further details.
2.
Specified at time of order by part number. Also available in frequencies from 970 to 1134 MHz and 1213 to 1417 MHz.
3.
Selectable parameter specified by part number.
4.
Time from powerup or tristate mode to f
O
.
Table 3. CLK± Output Levels and Symmetry
Parameter
LVPECL Output Option
1
Symbol
V
O
V
OD
V
SE
Test Condition
mid-level
swing (diff)
swing (single-ended)
mid-level
swing (diff)
Min
V
DD
– 1.42
1.1
0.55
1.125
0.5
Typ
—
Max
V
DD
– 1.25
1.9
0.95
1.275
0.9
Units
V
V
PP
V
PP
V
V
PP
—
—
1.20
0.7
LVDS Output Option
2
V
O
V
OD
CML Output Option
2
V
O
2.5/3.3 V option mid-level
1.8 V option mid-level
2.5/3.3 V option swing (diff)
V
OD
—
—
1.10
0.35
0.8 x V
DD
V
DD
– 1.30
V
DD
– 0.36
1.50
0.425
—
—
—
1
—
—
1.90
0.50
V
DD
V
V
V
PP
V
PP
V
1.8 V option swing (diff)
I
OH
= 32 mA
I
OL
= 32 mA
CMOS Output Option
3
V
OH
V
OL
—
—
—
0.4
350
—
ps
ns
Rise/Fall time (20/80%)
t
R,
t
F
LVPECL/LVDS/CML
CMOS with C
L
= 15 pF
Symmetry (duty cycle)
SYM
LVPECL:
(diff)
LVDS:
CMOS:
V
DD
– 1.3 V
1.25 V (diff)
V
DD
/2
45
—
55
%
Notes:
1.
50
to V
DD
– 2.0 V.
2.
R
term
= 100
(differential).
3.
C
L
= 15 pF
Rev. 1.31
3
Si532
Table 4. CLK± Output Phase Jitter
Parameter
Phase Jitter (RMS)
1
for F
OUT
> 500 MHz
Phase Jitter (RMS)
1
for F
OUT
of 125 to 500 MHz
Phase Jitter (RMS)
1
for F
OUT
of 125 and 156.25 MHz Only
Symbol
Test Condition
12 kHz to 20 MHz (OC-48)
50 kHz to 80 MHz (OC-192)
Min
—
—
—
—
—
—
—
Typ
0.25
0.26
0.36
0.34
0.25
0.62
0.61
Max
0.40
0.37
0.50
0.42
0.40
—
—
Units
ps
ps
ps
ps
ps
ps
ps
J
J
J
J
12 kHz to 20 MHz (OC-48)
50 kHz to 80 MHz (OC-192)
2
12 kHz to 20 MHz (Brickwall)
12 kHz to 20 MHz (OC-48)
2
50 kHz to 20 MHz
2
Phase Jitter (RMS)
for F
OUT
of 10 to 160 MHz
CMOS Output Only
Notes:
1.
Refer to AN256 for further information.
2.
Max offset frequencies: 80 MHz for FOUT > 250 MHz, 20 MHz for 50 MHz < FOUT <250 MHz,
2 MHz for 10 MHz < FOUT <50 MHz.
Table 5. CLK± Output Period Jitter
Parameter
Period Jitter*
Symbol
J
PER
Test Condition
RMS
Peak-to-Peak
Min
—
—
Typ
2
14
Max
—
—
Units
ps
ps
*Note:
Any output mode, including CMOS, LVPECL, LVDS, CML. N = 1000 cycles. Refer to AN279 for further information.
Table 6. CLK± Output Phase Noise (Typical)
Offset Frequency (f)
120.00 MHz
LVDS
100 Hz
1 kHz
10 kHz
100 kHz
1 MHz
10 MHz
100 MHz
–112
–122
–132
–137
–144
–150
n/a
156.25 MHz
LVPECL
–105
–122
–128
–135
–144
–147
n/a
622.08 MHz
LVPECL
–97
–107
–116
–121
–134
–146
–148
Units
dBc/Hz
4
Rev. 1.31
Si532
Table 7. Environmental Compliance
The Si532 meets the following qualification test requirements.
Parameter
Mechanical Shock
Mechanical Vibration
Solderability
Gross & Fine Leak
Resistance to Solder Heat
Moisture Sensitivity Level
Contact Pads
Conditions/Test Method
MIL-STD-883, Method 2002
MIL-STD-883, Method 2007
MIL-STD-883, Method 2003
MIL-STD-883, Method 1014
MIL-STD-883, Method 2036
J-STD_020, MSL1
Gold over Nickel
Table 8. Thermal Characteristics
(Typical values TA = 25 ºC, V
DD
= 3.3 V)
Parameter
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
Ambient Temperature
Junction Temperature
Symbol
JA
JC
T
A
T
J
Test Condition
Still Air
Still Air
Min
—
—
–40
—
Typ
84.6
38.8
—
—
Max
—
—
85
125
Unit
°C/W
°C/W
°C
°C
Table 9. Absolute Maximum Ratings
1
Parameter
Maximum Operating Temperature
Supply Voltage, 1.8 V Option
Supply Voltage, 2.5/3.3 V Option
Input Voltage (any input pin)
Storage Temperature
ESD Sensitivity (HBM, per JESD22-A114)
Soldering Temperature (Pb-free profile)
2
Soldering Temperature Time @ T
PEAK
(Pb-free profile)
2
Symbol
T
AMAX
V
DD
V
DD
V
I
T
S
ESD
T
PEAK
t
P
Rating
85
–0.5 to +1.9
–0.5 to +3.8
–0.5 to V
DD
+ 0.3
–55 to +125
2500
260
20–40
Units
ºC
V
V
V
ºC
V
ºC
seconds
Notes:
1.
Stresses beyond those listed in Absolute Maximum Ratings may cause permanent damage to the device. Functional
operation or specification compliance is not implied at these conditions.
2.
The device is compliant with JEDEC J-STD-020C. Refer to Si5xx Packaging FAQ available for download at
www.silabs.com/VCXO
for further information, including soldering profiles.
Rev. 1.31
5
能源基础设施
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