NSVF4015SG4
RF Transistor for Low Noise
Amplifier
12 V, 100 mA, f
T
= 10 GHz typ.
This RF transistor is designed for low noise amplifier applications.
MCPH package is suitable for use under high temperature
environment because it has superior heat radiation characteristics.
This RF transistor is AEC−Q101 qualified and PPAP capable for
automotive applications.
Features
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12 V, 100 mA
f
T
= 10 Ghz typ.
RF Transistor
•
•
•
•
•
•
•
•
•
•
Low−noise Use: NF = 1.2 dB typ. (f = 1 GHz)
High Cut−off Frequency: f
T
= 10 GHz typ. (V
CE
= 5 V)
High Gain:
|S21e|
2
= 17 dB typ. (f = 1 GHz)
MCPH4 Package is Pin−compatible with SC−82FL
AEC−Q101 Qualified and PPAP Capable
Pb−Free, Halogen Free and RoHS Compliance
3
ELECTRICAL CONNECTION
NPN
1
1: Collector
2: Emitter
3: Base
4: Emitter
2, 4
Typical Applications
Low Noise Amplifier for Digital Radio
Low Noise Amplifier for TV
Low Noise Amplifier for FM Radio
RF Amplifier for UHF Application
4
1
Value
20
12
2
100
450
−55
to +150
Unit
V
V
V
mA
mW
°C
2
MARKING DIAGRAM
Specifications
ABSOLUTE MAXIMUM RATINGS
at T
A
= 25°C
Rating
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Dissipation
Operating Junction and Storage
Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
stg
LOT No.
GN
MCPH4
ORDERING INFORMATION
See detailed ordering and shipping
information on page 10 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
©
Semiconductor Components Industries, LLC, 2017
March, 2018
−
Rev. 0
1
Publication Order Number:
NSFV4015SG4/D
LOT No.
3
NSVF4015SG4
Table 1. ELECTRICAL CHARACTERISTICS
at T
A
= 25°C (Note 1)
Value
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain−Bandwidth Product
Forward Transfer Gain
Noise Figure
Symbol
I
CBO
I
EBO
h
FE
f
T
| S21e |
2
NF
Conditions
V
CB
= 5 V, I
E
=
0
A
V
EB
= 1 V, I
C
=
0
A
V
CE
= 5 V, I
C
= 50 mA
V
CE
= 5 V, I
C
= 30 mA
V
CE
= 5 V, I
C
= 30 mA, f
=
1 GHz
V
CE
= 5 V, I
C
= 10 mA, f
=
1 GHz
Min
−
−
60
8
14
Typ
−
−
−
10
17
1.2
Max
1.0
1.0
150
−
−
1.8
GHz
dB
dB
Unit
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pay attention to handling since it is liable to be affected by static electricity due to the high−frequency process adopted.
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NSVF4015SG4
TYPICAL CHARACTERISTICS
100
90
Collector Current, I
C
−
mA
80
70
60
50
40
30
20
10
0
0
100
900
mA
800
mA
700
mA
600
mA
500
mA
400
mA
300
mA
200
mA
100
mA
I
B
= 0
mA
2
4
6
8
10
Collector−to−Emitter Voltage, V
CE
−
V
12
90
Collector Current, I
c
−
mA
80
70
60
50
40
30
20
10
0
0
0.2
0.4
0.6
0.8
Base−to−Emitter Voltage, V
BE
−
V
1.0
1000
mA
V
CE
= 5 V
Figure 1. I
C
vs. V
CE
1000
7
5
DC Current Gain, h
FE
3
2
100
7
5
3
2
10
2
3
5 7 10
2
3
Collector Currant, I
C
−
mA
5
7 100
10
7
5
3
2
1.0
7
5
3
2
0.1
0.1
Figure 2. I
C
vs. V
BE
V
CE
= 5 V
Output Capacitance, Cob
−
pF
f = 1 MHz
1.0
2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Collector−to−Base Voltage, V
BE
−
V
Figure 3. h
FE
vs. I
C
1.0
7
5
100
Gain−Bandwidth Product, f
T
−
GHz
7
5
3
2
10
7
5
3
2
1.0
1.0
2
Figure 4. C
ob
vs. V
CB
Reverse Transfer Capacitance, Cre
−
pF
f = 1 MHz
V
CE
= 5 V
f = 1 GHz
3
2
0.1
0.1
2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Collector−to−Base Voltage, V
CB
−
V
3
5 7 10
2 3
Collector Current, I
C
−
mA
5
7 100
Figure 5. Cre vs. V
CB
Figure 6. f
T
vs. I
C
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