BTA308X-800F0
3Q Hi-Com Triac
24 March 2017
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic package.
This triac is intended for use in motor control circuits where high blocking voltage, high static and
dynamic dV/dt as well as high dIcom/dt can occur. This "series F0" triac will commutate the full
rated RMS current at the maximum rated junction temperature (T
j(max)
= 150 °C) without the aid of
a snubber.
2. Features and benefits
•
•
•
•
•
•
•
•
•
3Q technology for improved noise immunity
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
Isolated mounting base package
High junction operating temperature capability (T
j(max)
= 150 °C)
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
High voltage capability
Optimized for highest noise immunity
3. Applications
•
•
•
•
Compressor starting control circuits
General purpose motor controls
Reversing induction motor controls e.g. vertical axis washing machines
Applications subject to high temperature (T
j(max)
= 150 °C)
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-
state voltage
RMS on-state current
full sine wave; T
h
≤ 106 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
-
Typ
-
-
-
-
-
Max
800
8
60
65
150
Unit
V
A
A
A
°C
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
T
j
junction temperature
Static characteristics
WeEn Semiconductors
BTA308X-800F0
3Q Hi-Com Triac
Symbol
I
GT
Parameter
gate trigger current
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
Min
5
5
5
-
-
500
Typ
-
-
-
-
1.3
-
Max
20
20
20
50
1.65
-
Unit
mA
mA
mA
mA
V
V/µs
I
H
V
T
dV
D
/dt
holding current
on-state voltage
rate of rise of off-state
voltage
rate of change of
commutating current
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
I
T
= 10 A; T
j
= 25 °C;
Fig. 10
V
DM
= 536 V; T
j
= 150 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
V
D
= 400 V; T
j
= 150 °C; I
T(RMS)
= 8 A;
dV
com
/dt = 20 V/µs; (snubberless
condition); gate open circuit;
Fig. 12
Dynamic characteristics
dI
com
/dt
6
-
-
A/ms
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
mb
Symbol Description
T1
T2
G
n.c.
main terminal 1
main terminal 2
gate
mounting base; isolated
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
1 2 3
TO-220F (SOT186A)
6. Ordering information
Table 3. Ordering information
Type number
BTA308X-800F0
BTA308X-800F0/L03
Package
Name
TO-220F
TO-220F
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
Version
SOT186A
SOT186A
BTA308X-800F0
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
24 March 2017
2 / 13
WeEn Semiconductors
BTA308X-800F0
3Q Hi-Com Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I t for fusing
rate of rise of on-state
current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
10
aaf075-001
Conditions
Min
-
Max
800
8
60
65
18
100
2
5
0.5
150
150
Unit
V
A
A
A
A²s
A/µs
A
W
W
°C
°C
full sine wave; T
h
≤ 106 °C;
Fig. 1; Fig. 2;
Fig. 3
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
Fig. 4; Fig. 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
t
p
= 10 ms; SIN
I
G
= 0.2 A
-
-
-
-
-
-
-
I t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
2
2
over any 20 ms period
-
-40
-
20
aaf075-002
I
T(RMS)
(A)
106 °C
8
I
T(RMS)
(A)
16
6
12
4
8
2
4
0
-50
0
50
100
150
T
h
(°C)
0
10
-2
10
-1
1
10
surge duration (s)
Fig. 1. RMS on-state current as a function of heatsink
temperature; maximum values
f = 50 Hz; T
h
= 106 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
BTA308X-800F0
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
24 March 2017
3 / 13
WeEn Semiconductors
BTA308X-800F0
3Q Hi-Com Triac
P
tot
(W)
12
10
8
6
4
2
0
conduction form
angle
factor
(degrees)
α
30
60
90
120
180
2.816
1.967
1.570
1.329
1.110
α
aaf075-003
α = 180°
120°
90°
60°
30°
96
T
h(max)
(°C)
105
114
123
132
141
0
2
4
6
8
I
T(RMS)
(A)
150
10
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
I
TSM
(A)
80
aaf075-004
I
T
I
TSM
t
60
T
T
j(init)
= 25 °C max
40
20
0
1
10
10
2
number of cycles (n)
10
3
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA308X-800F0
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
24 March 2017
4 / 13
WeEn Semiconductors
BTA308X-800F0
3Q Hi-Com Triac
I
TSM
(A)
10
4
aaf075-005
I
T
I
TSM
t
10
3
T
T
j(init)
= 25 °C max
10
2
(1)
10
10
-5
10
-4
10
-3
10
-2
t
p
(s)
10
-1
t
p
≤ 20 ms
(1) dI
T
/dt limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
BTA308X-800F0
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
24 March 2017
5 / 13
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