LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE
| OM60N05SA | OM50N06SA | OM50N06ST | OM60N06SA | OM50N05SA | OM50N05ST | |
|---|---|---|---|---|---|---|
| 描述 | LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE | LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE | LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE | LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE | LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE | LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE |
| 是否无铅 | - | 含铅 | 含铅 | - | 含铅 | 含铅 |
| 是否Rohs认证 | - | 不符合 | 不符合 | - | 不符合 | 不符合 |
| 零件包装代码 | - | TO-254AA | TO-257AA | - | TO-254AA | TO-257AA |
| 包装说明 | - | FLANGE MOUNT, S-MSFM-P3 | FLANGE MOUNT, S-MSFM-P3 | - | FLANGE MOUNT, S-MSFM-P3 | FLANGE MOUNT, S-MSFM-P3 |
| 针数 | - | 3 | 3 | - | 3 | 3 |
| Reach Compliance Code | - | compli | compli | - | compli | compli |
| ECCN代码 | - | EAR99 | EAR99 | - | EAR99 | EAR99 |
| 雪崩能效等级（Eas） | - | 400 mJ | 400 mJ | - | 400 mJ | 400 mJ |
| 外壳连接 | - | ISOLATED | ISOLATED | - | ISOLATED | ISOLATED |
| 配置 | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | - | 60 V | 60 V | - | 50 V | 50 V |
| 最大漏极电流 (Abs) (ID) | - | 50 A | 50 A | - | 50 A | 50 A |
| 最大漏极电流 (ID) | - | 50 A | 50 A | - | 50 A | 50 A |
| 最大漏源导通电阻 | - | 0.028 Ω | 0.033 Ω | - | 0.028 Ω | 0.033 Ω |
| FET 技术 | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | - | TO-254AA | TO-257AA | - | TO-254AA | TO-257AA |
| JESD-30 代码 | - | S-MSFM-P3 | S-MSFM-P3 | - | S-MSFM-P3 | S-MSFM-P3 |
| JESD-609代码 | - | e0 | e0 | - | e0 | e0 |
| 元件数量 | - | 1 | 1 | - | 1 | 1 |
| 端子数量 | - | 3 | 3 | - | 3 | 3 |
| 工作模式 | - | ENHANCEMENT MODE | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | - | 150 °C | 150 °C | - | 150 °C | 150 °C |
| 封装主体材料 | - | METAL | METAL | - | METAL | METAL |
| 封装形状 | - | SQUARE | SQUARE | - | SQUARE | SQUARE |
| 封装形式 | - | FLANGE MOUNT | FLANGE MOUNT | - | FLANGE MOUNT | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | - | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | - | N-CHANNEL | N-CHANNEL | - | N-CHANNEL | N-CHANNEL |
| 最大功率耗散 (Abs) | - | 100 W | 100 W | - | 100 W | 100 W |
| 最大脉冲漏极电流 (IDM) | - | 200 A | 200 A | - | 200 A | 200 A |
| 认证状态 | - | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified |
| 表面贴装 | - | NO | NO | - | NO | NO |
| 端子面层 | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | - | PIN/PEG | PIN/PEG | - | PIN/PEG | PIN/PEG |
| 端子位置 | - | SINGLE | SINGLE | - | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | - | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | - | SWITCHING | SWITCHING | - | SWITCHING | SWITCHING |
| 晶体管元件材料 | - | SILICON | SILICON | - | SILICON | SILICON |
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