VS-VSUD400CW60
www.vishay.com
Vishay Semiconductors
FRED Pt
®
,
Ultra Fast Soft Recovery Diode Module, 400 A
FEATURES
Lug
terminal
anode 1
Lug
terminal
anode 2
• Ultrafast recovery
• UL approved file E222165
• Designed for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TO-244
Base common
cathode
BENEFITS
• Reduced RFI and EMI
• Higher frequency operation
• Reduced snubbing
PRIMARY CHARACTERISTICS
I
F(AV)
V
R
Q
rr
t
rr
Type
Package
Circuit configuration
400 A
600 V
4730 nC
90 ns
Modules - Diode, FRED Pt
®
TO-244
Two diodes common cathode
• Reduced parts count
DESCRIPTION / APPLICATIONS
FRED Pt
®
diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems. The
softness of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for HF
welding, power converters and other applications where
switching losses are significant portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
SYMBOL
V
R
T
C
= 25 °C
Continuous forward current per diode
I
F(AV)
I
FSM
P
D
T
J
, T
Stg
T
C
= 85 °C
T
C
= 97 °C
Single pulse forward current per diode
Maximum power dissipation
Operating junction and storage
temperatures
T
C
= 25 °C
T
C
= 25 °C
T
C
= 97 °C
TEST CONDITIONS
MAX.
600
330
230
200
2520
660
280
-40 to +150
W
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS PER LEG
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage
SYMBOL
V
BR
TEST CONDITIONS
I
R
= 100 μA
I
F
= 200 A
Forward voltage
V
FM
I
F
= 400 A
I
F
= 200 A, T
J
= 150 °C
I
F
= 400 A, T
J
= 150 °C
Reverse leakage current
Series inductance
I
RM
L
S
T
J
= 150 °C, V
R
= V
R
rated
From top of terminal hole to mounting plane
MIN.
600
-
-
-
-
-
-
TYP.
-
1.45
1.67
1.13
1.39
0.3
5
MAX.
-
2.0
2.3
1.4
1.8
1.38
-
mA
nH
V
UNITS
Revision: 09-May-17
Document Number: 93117
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSUD400CW60
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Reverse recovery time
SYMBOL
T
J
= 25 °C
t
rr
T
J
= 150 °C
Peak recovery current
I
RRM
Q
rr
TEST CONDITIONS
I
F
= 200 A,
dI
F
/dt = 200 A/μs,
V
R
= 200 V
MIN.
-
-
-
-
-
-
TYP.
90
240
8.3
24
830
4730
MAX.
-
ns
-
-
-
-
-
A
UNITS
I
F
= 200 A, dI
F
/dt = 200 A/μs, V
R
= 200 V
I
F
= 200 A, dI
F
/dt = 200 A/μs, V
R
= 200 V, T
J
= 150 °C
I
F
= 200 A, dI
F
/dt = 200 A/μs, V
R
= 200 V
I
F
= 200 A, dI
F
/dt = 200 A/μs, V
R
= 200 V, T
J
= 150 °C
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Thermal resistance,
junction to case
Thermal resistance,
case to heatsink
Weight
Mounting torque
Mounting torque center hole
Terminal torque
Vertical pull
2" lever pull
Case style
per leg
per module
SYMBOL
R
thJC
R
thCS
MIN.
-
-
-
-
-
30 (3.4)
12 (1.4)
30 (3.4)
-
-
TYP.
-
-
0.10
68
2.4
-
-
-
-
-
MAX.
0.19
0.095
-
-
-
40 (4.6)
18 (2.1)
40 (4.6)
80
35
lbf · in
lbf · in
(N · m)
g
oz.
°C/W
UNITS
TO-244 (TO-244AB)
I
F
- Instantaneous Forward Current (A)
1000
1000
I
R
- Reverse Current (μA)
100
T
J
= 150 °C
100
10
10
T
J
= 25 °C
T
J
= 150 °C
1
25 °C
0.1
1
0
0.5
1.0
1.5
2.0
2.5
0.01
0
100
200
300
400
500
600
V
F
- Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop vs.
Instantaneous Forward Current (Per Leg)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Reverse Current vs. Reverse Voltage
(Per Leg)
Revision: 09-May-17
Document Number: 93117
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSUD400CW60
www.vishay.com
Vishay Semiconductors
8000
I
F
= 200 A
V
rr
= 200 V
Allowable Case Temperature (°C)
160
120
DC
80
6000
T
J
= 150 °C
Q
rr
(nC)
4000
40
Square
wave (D = 0.50)
rated V
R
applied
2000
T
J
= 25 °C
0
0
100
200
300
400
0
100
200
300
400
500
I
DC
- Current Rating (A)
Fig. 3 - Maximum Current Rating Capability (Per Leg)
dI
F
dt
(A/μs)
Fig. 6 - Typical Reverse Recovery Charge vs. dI
F
/dt
(Per Leg)
200
RMS Limit
40
I
F
= 200 A
V
rr
= 200 V
30
Forward Power Loss (W)
150
DC
I
RR
(A)
T
J
= 150 ˚ C
20
100
50
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
10
T
J
= 25 ˚ C
0
100
0
0
50
100
150
200
200
300
400
500
Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
dI
F
dt
(A/μs)
Fig. 7 - Typical Reverse Recovery Current vs. dI
F
/dt
(Per Leg)
300
I
F
= 200 A
V
rr
= 200 V
200
T
J
= 150 ˚ C
t
rr
(ns)
100
T
J
= 25 ˚ C
0
100
200
300
400
500
dI
F
dt
(A/μs)
Fig. 5 - Typical Reverse Recovery Time vs.
dI
F
/dt (Per Leg)
Revision: 09-May-17
Document Number: 93117
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-VSUD400CW60
www.vishay.com
Vishay Semiconductors
V
R
= 200 V
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 8 - Reverse Recovery Parameter Test Circuit
ORDERING INFORMATION TABLE
Device code
VS-VS UD
1
1
2
3
4
5
6
-
-
-
-
-
-
2
400
3
C
4
W
5
60
6
Vishay Semiconductors product
UD = FRED Pt
®
Current rating (400 = 400 A)
Circuit configuration:
C = common cathode
W = TO-244 wire bondable not insulated
Voltage rating (60 = 600 V)
CIRCUIT CONFIGURATION
CIRCUIT
CIRCUIT
CONFIGURATION CODE
Lug
terminal
anode 2
CIRCUIT DRAWING
Two diodes common cathode
C
Lug
terminal
anode 1
Base common
cathode
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95021
Revision: 09-May-17
Document Number: 93117
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Outline Dimensions
www.vishay.com
Vishay Semiconductors
TO-244
DIMENSIONS
in millimeters (inches)
35 (1.37) REF.
13 (0.51)
7 (0.27)
6 (0.23)
40 (1.57)
80 (3.15)
17.5 (0.69)
16.5 (0.65)
Ø 5.2 (Ø 0.20)
3
12.6 (0.5)
1
2
3
21 (0.82)
20 (0.78)
Ø 7.2 (Ø 0.28)
(2 places)
¼" - 20 UNC
9.6 (0.37) MIN.
93 (3.66) MAX.
Revision: 24-Apr-15
Document Number: 95021
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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