VS-10ETF0...PbF Series, VS-10ETF0...-M3 Series
www.vishay.com
Vishay Semiconductors
Fast Soft Recovery Rectifier Diode, 10 A
Base
cathode
FEATURES
• Glass passivated pellet chip junction
• 150 °C max operating junction temperature
• Low forward voltage drop and short reverse
recovery time
• Designed
and
qualified
according
to
®
-JESD 47
JEDEC
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
2
2
3
TO-220AC
1
1
Cathode
3
Anode
APPLICATIONS
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
FSM
t
rr
T
J
max.
Diode variation
Snap factor
TO-220AC
10 A
200 V, 400 V, 600 V
1.2 V
130 A
50 ns
150 °C
Single die
0.6
These devices are intended for use in output rectification
and freewheeling in inverters, choppers and converters as
well as in input rectification where severe restrictions on
conducted EMI should be met.
DESCRIPTION
The VS-10ETF0... fast soft recovery rectifier series has been
optimized for combined short reverse recovery time and low
forward voltage drop.
The glass passivation ensures stable reliable operation in
the most severe temperature and power cycling conditions.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
V
RRM
I
F(AV)
I
FSM
t
rr
V
F
T
J
1 A, 100 A/µs
10 A, T
J
= 25 °C
Sinusoidal waveform
CHARACTERISTICS
VALUES
200 to 600
10
130
50
1.2
-40 to +150
UNITS
V
A
ns
V
°C
VOLTAGE RATINGS
PART NUMBER
VS-10ETF02PbF, VS-10ETF02-M3
VS-10ETF04PbF, VS-10ETF04-M3
VS-10ETF06PbF, VS-10ETF06-M3
V
RRM
, MAXIMUM PEAK REVERSE
VOLTAGE
V
200
400
600
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
300
500
700
3
I
RRM
AT 150 °C
mA
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
t
TEST CONDITIONS
T
C
= 128 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
VALUES
10
110
130
60
85
850
A
2
s
A
2
s
A
UNITS
Revision: 11-Feb-16
Document Number: 94090
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10ETF0...PbF Series, VS-10ETF0...-M3 Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
10 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
V
R
= Rated V
RRM
VALUES
1.2
23.5
0.85
0.1
3.0
UNITS
V
m
V
mA
RECOVERY CHARACTERISTICS
PARAMETER
Reverse recovery time
Reverse recovery current
Reverse recovery charge
Snap factor
SYMBOL
t
rr
I
rr
Q
rr
S
TEST CONDITIONS
I
F
at 10 A
pk
25 A/μs
25 °C
VALUES
200
2.75
0.32
0.6
UNITS
ns
A
μC
dir
dt
Q
rr
I
RM(REC)
I
FM
t
rr
t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance
junction to case
Maximum thermal resistance
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style TO-220AC (JEDEC)
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth and greased
DC operation
TEST CONDITIONS
VALUES
-40 to +150
1.5
62
0.5
2
0.07
6 (5)
12 (10)
10ETF02
10ETF04
10ETF06
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
Mounting torque
Marking device
Revision: 11-Feb-16
Document Number: 94090
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10ETF0...PbF Series, VS-10ETF0...-M3 Series
www.vishay.com
Vishay Semiconductors
20
10ETF.. Series
T
J
= 150 °C
30°
12
RMS limit
90°
60°
120°
180°
DC
150
145
140
135
130
125
30°
120
0
2
4
6
8
10
12
60°
90° 120°
180°
Maximum Average Forward
Power Loss (W)
Maximum Allowable Case
Temperature (°C)
10ETF.. Series
R
thJC
(DC) = 1.5 °C/W
16
Ø
Conduction angle
8
Ø
4
Conduction period
0
0
4
8
12
16
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
120
10ETF.. Series
R
thJC
(DC) = 1.5 °C/W
110
At any rated load condition and with
rated Vrrm applied following
surge.
Initial Tj = 150 °C
at 60 Hz 0.0083
s
at 50 Hz 0.0100
s
Maximum Allowable Case
Temperature (°C)
145
140
Peak Half Sine Wave
Forward Current (A)
100
90
80
70
60
50
40
30
20
Ø
Conduction period
135
130
120°
125
30°
120
0
2
4
6
8
10
12
14
16
60°
90°
180°
DC
VS-10ETF..
Series
1
10
100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
16
120°
150
90°
30°
RMS limit
180°
130
Maximum non-repetitive
surge
current
versus pulse train duration.
Initial Tj = Tj max.
No voltage reapplied
Rated Vrrm reapplied
Maximum Average Forward
Power Loss (W)
14
12
10
8
6
60°
Peak Half Sine Wave
Forward Current (A)
110
90
70
50
30
Ø
4
2
0
0
2
4
6
Conduction angle
10ETF.. Series
T
J
= 150 °C
8
10
VS-10ETF..
Series
10
0.01
0.1
1
10
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 11-Feb-16
Document Number: 94090
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10ETF0...PbF Series, VS-10ETF0...-M3 Series
www.vishay.com
Vishay Semiconductors
1.4
10ETF.. Series
T
J
= 25 °C
Instantaneous Forward Current (A)
100
10ETF.. Series
1.2
I
FM
= 20 A
Q
rr
- Typical Reverse
Recovery Charge (µC)
1.0
I
FM
= 10 A
0.8
0.6
0.4
0.2
I
FM
= 1 A
I
FM
= 5 A
I
FM
= 2 A
10
T
J
= 150 °C
T
J
= 25 °C
1
0.5
0
1.0
1.5
2.0
2.5
3.0
0
40
80
120
160
200
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, T
J
= 25 °C
Typical Reverse Recovery Time - T
rr
(μs)
0.4
8EWF..S
Series
T J = 25 °C
0.3
I
FM
= 20 A
0.2
10 A
8A
5A
0.1
2A
1A
0
0
40
80
120
160
200
2.5
10ETF.. Series
T
J
= 150 °C
I
FM
= 20 A
I
FM
= 10 A
1.5
I
FM
= 5 A
1.0
I
FM
= 2 A
0.5
I
FM
= 1 A
0
0
40
80
120
160
200
Q
rr
- Typical Reverse
Recovery Charge (µC)
2.0
Rate Of Fall Of Forward Current -
dI/dt
(A/μs)
Fig. 8 - Recovery Time Characteristics, T
J
= 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, T
J
= 150 °C
0.4
10ETF.. Series
T
J
= 150 °C
15
10ETF.. Series
T
J
= 25 °C
I
FM
= 20 A
I
FM
= 10 A
I
FM
= 5 A
I
FM
= 2 A
6
I
FM
= 1 A
3
0.3
I
rr
- Typical Reverse
Recovery Current (A)
200
t
rr
- Typical Reverse
Recovery Time (µs)
12
I
FM
= 20 A
0.2
I
FM
= 10 A
I
FM
= 5 A
0.1
I
FM
= 2 A
I
FM
= 1 A
0
0
40
80
120
160
9
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, T
J
= 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, T
J
= 25 °C
Revision: 11-Feb-16
Document Number: 94090
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10ETF0...PbF Series, VS-10ETF0...-M3 Series
www.vishay.com
Vishay Semiconductors
20
10ETF.. Series
T
J
= 150 °C
I
FM
= 20 A
I
FM
= 10 A
12
I
FM
= 5 A
I
FM
= 2 A
8
I
FM
= 1 A
4
I
rr
- Typical Reverse
Recovery Current (A)
16
0
0
40
80
120
160
200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, T
J
= 150 °C
Z
thJC
- Transient Thermal Impedance (°C/W)
10
Steady state
value
(DC operation)
1
0.1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
1
0.01
Single pulse
0.001
0.001
10ETF.. Series
0.01
10
Square Wave Pulse Duration (s)
Fig. 14 - Thermal Impedance Z
thJC
Characteristics
Revision: 11-Feb-16
Document Number: 94090
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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