电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

C192G241J2G5CS

产品描述Multilayer Ceramic Capacitors MLCC - Leaded 240.PF 200V
产品类别无源元件    电容器   
文件大小1MB,共16页
制造商KEMET(基美)
官网地址http://www.kemet.com
下载文档 详细参数 全文预览

C192G241J2G5CS在线购买

供应商 器件名称 价格 最低购买 库存  
C192G241J2G5CS - - 点击查看 点击购买

C192G241J2G5CS概述

Multilayer Ceramic Capacitors MLCC - Leaded 240.PF 200V

C192G241J2G5CS规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称KEMET(基美)
包装说明,
Reach Compliance Codenot_compliant
ECCN代码EAR99
Factory Lead Time57 weeks 2 days
电容0.00024 µF
电容器类型CERAMIC CAPACITOR
直径3.56 mm
介电材料CERAMIC
JESD-609代码e0
长度9.91 mm
制造商序列号C192
安装特点THROUGH HOLE MOUNT
多层Yes
负容差5%
端子数量2
最高工作温度125 °C
最低工作温度-55 °C
封装形状TUBULAR PACKAGE
封装形式Axial
包装方法BULK
正容差5%
额定(直流)电压(URdc)200 V
参考标准MIL-PRF-20/29
系列C(SIZE)G
表面贴装NO
温度特性代码C0G
温度系数-/+30ppm/Cel ppm/°C
端子面层Tin/Lead (Sn60Pb40)
端子形状WIRE

文档预览

下载PDF文档
MULTILAYER CERAMIC CAPACITORS/AXIAL
& RADIAL LEADED
Multilayer ceramic capacitors are available in a
variety of physical sizes and configurations, including
leaded devices and surface mounted chips. Leaded
styles include molded and conformally coated parts
with axial and radial leads. However, the basic
capacitor element is similar for all styles. It is called a
chip and consists of formulated dielectric materials
which have been cast into thin layers, interspersed
with metal electrodes alternately exposed on opposite
edges of the laminated structure. The entire structure is
fired at high temperature to produce a monolithic
block which provides high capacitance values in a
small physical volume. After firing, conductive
terminations are applied to opposite ends of the chip to
make contact with the exposed electrodes.
Termination materials and methods vary depending on
the intended use.
TEMPERATURE CHARACTERISTICS
Ceramic dielectric materials can be formulated with
Class III:
General purpose capacitors, suitable
a wide range of characteristics. The EIA standard for
for by-pass coupling or other applications in which
ceramic dielectric capacitors (RS-198) divides ceramic
dielectric losses, high insulation resistance and
dielectrics into the following classes:
stability of capacitance characteristics are of little or
no importance. Class III capacitors are similar to Class
Class I:
Temperature compensating capacitors,
II capacitors except for temperature characteristics,
suitable for resonant circuit application or other appli-
which are greater than ± 15%. Class III capacitors
cations where high Q and stability of capacitance char-
have the highest volumetric efficiency and poorest
acteristics are required. Class I capacitors have
stability of any type.
predictable temperature coefficients and are not
affected by voltage, frequency or time. They are made
KEMET leaded ceramic capacitors are offered in
from materials which are not ferro-electric, yielding
the three most popular temperature characteristics:
superior stability but low volumetric efficiency. Class I
C0G:
Class I, with a temperature coefficient of 0 ±
capacitors are the most stable type available, but have
30 ppm per degree C over an operating
the lowest volumetric efficiency.
temperature range of - 55°C to + 125°C (Also
known as “NP0”).
Class II:
Stable capacitors, suitable for bypass
X7R:
Class II, with a maximum capacitance
or coupling applications or frequency discriminating
change of ± 15% over an operating temperature
circuits where Q and stability of capacitance char-
range of - 55°C to + 125°C.
acteristics are not of major importance. Class II
Z5U:
Class III, with a maximum capacitance
capacitors have temperature characteristics of ± 15%
change of + 22% - 56% over an operating tem-
or less. They are made from materials which are
perature range of + 10°C to + 85°C.
ferro-electric, yielding higher volumetric efficiency but
less stability. Class II capacitors are affected by
Specified electrical limits for these three temperature
temperature, voltage, frequency and time.
characteristics are shown in Table 1.
SPECIFIED ELECTRICAL LIMITS
Parameter
Dissipation Factor: Measured at following conditions.
C0G – 1 kHz and 1 vrms if capacitance >1000pF
1 MHz and 1 vrms if capacitance 1000 pF
X7R – 1 kHz and 1 vrms* or if extended cap range 0.5 vrms
Z5U – 1 kHz and 0.5 vrms
Dielectric Stength: 2.5 times rated DC voltage.
Insulation Resistance (IR): At rated DC voltage,
whichever of the two is smaller
Temperature Characteristics: Range, °C
Capacitance Change without
DC voltage
* MHz and 1 vrms if capacitance
100 pF on military product.
Temperature Characteristics
C0G
X7R
2.5%
(3.5% @ 25V)
Z5U
0.10%
4.0%
Pass Subsequent IR Test
1,000 M
F
or 100 G
-55 to +125
0 ± 30 ppm/°C
1,000 M
F
or 100 G
-55 to +125
± 15%
1,000 M
or 10 G
F
+ 10 to +85
+22%,-56%
Table I
4
© KEMET Electronics Corporation, P.O. Box 5928, Greenville, S.C. 29606, (864) 963-6300
DM6446 EVM板 Uboot与内核烧写和启动步骤详细说明
为防止时间长了忘记如何使用这个板子,同时能够让实验室师弟师妹们能方便的上手开发,在这里将Uboot和内核的烧写和启动方法记录一下: 注意:"D:\dm6446Uboot\ "是我电脑上存储Uboot工程 ......
Aguilera DSP 与 ARM 处理器
请问下大使用集成PT2262无线发射模块发射距离不远的问题?
我的发射模块为集成PT2262无线发射模块,配套使用超外差接收头,PT2272解码,振荡电阻配套,现在能发射接收信号,但距离不远,我使用1000M的发射头接收距离只有30M左右,这是什么原因? 使用300 ......
greylove 无线连接
IC Design 招聘(北京)系统移植工程师
jonathan@chinaeejob.com IC Design 招聘(北京)系统移植工程师 1.做系统平台移植. 2.懂ARM 和liunx. 3.熟悉音视频编解码(h.264 .AVS等)...
liuxing168 嵌入式系统
关于用STC12C2052AD实现自动化的问题[图片见附件]求各位大侠帮忙修改下程序+注释
/ IN OUT //P3.0 启动 P1.7 前进 //P3.1 启动 P1.5 下降 //P3.2 急停 P1.3 计数器 //P3.3 下降下限1 //P3.4 下降下限2 //P3.5 前进前限 #include #include #d ......
singleyork 51单片机
Newnes_The.Circuit.Designer's.Companion3e2012Wilson.pdf
附件在下载中心 ...
funzero 下载中心专版
基于Proteus的8051单片机实例教程》源程序
基于Proteus的8051单片机实例教程》源程序...
yang592886266 51单片机

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1238  180  1060  349  1122  47  49  57  14  4 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved