Cache SRAM, 64KX32, 6ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
| 参数名称 | 属性值 |
| 是否无铅 | 不含铅 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | IDT (Integrated Device Technology) |
| 零件包装代码 | QFP |
| 包装说明 | 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 |
| 针数 | 100 |
| Reach Compliance Code | unknown |
| ECCN代码 | 3A991.B.2.A |
| 最长访问时间 | 6 ns |
| 其他特性 | ALSO REQUIRES 3.3V I/O SUPPLY |
| 最大时钟频率 (fCLK) | 83 MHz |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-PQFP-G100 |
| JESD-609代码 | e3 |
| 长度 | 20 mm |
| 内存密度 | 2097152 bit |
| 内存集成电路类型 | CACHE SRAM |
| 内存宽度 | 32 |
| 湿度敏感等级 | 3 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 100 |
| 字数 | 65536 words |
| 字数代码 | 64000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 64KX32 |
| 输出特性 | 3-STATE |
| 可输出 | YES |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | LQFP |
| 封装等效代码 | QFP100,.63X.87 |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLATPACK, LOW PROFILE |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | 260 |
| 电源 | 3.3 V |
| 认证状态 | Not Qualified |
| 座面最大高度 | 1.6 mm |
| 最大待机电流 | 0.015 A |
| 最小待机电流 | 3.14 V |
| 最大压摆率 | 0.18 mA |
| 最大供电电压 (Vsup) | 3.63 V |
| 最小供电电压 (Vsup) | 3.135 V |
| 标称供电电压 (Vsup) | 3.3 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | Matte Tin (Sn) - annealed |
| 端子形式 | GULL WING |
| 端子节距 | 0.65 mm |
| 端子位置 | QUAD |
| 处于峰值回流温度下的最长时间 | 30 |
| 宽度 | 14 mm |
| Base Number Matches | 1 |
| IDT71V632S6PFG | IDT71V632S7PFG | IDT71V632S5PFG | IDT71V632S5PFG8 | IDT71V632S6PFG8 | |
|---|---|---|---|---|---|
| 描述 | Cache SRAM, 64KX32, 6ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 | Cache SRAM, 64KX32, 7ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 | Cache SRAM, 64KX32, 5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 | Cache SRAM, 64KX32, 5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 | Cache SRAM, 64KX32, 6ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 |
| 是否无铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 | 不含铅 |
| 是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 |
| 厂商名称 | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
| 零件包装代码 | QFP | QFP | QFP | QFP | QFP |
| 包装说明 | 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 | LQFP, QFP100,.63X.87 | 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 | 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 | 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 |
| 针数 | 100 | 100 | 100 | 100 | 100 |
| Reach Compliance Code | unknown | compliant | unknown | unknown | unknown |
| ECCN代码 | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A |
| 最长访问时间 | 6 ns | 7 ns | 5 ns | 5 ns | 6 ns |
| 其他特性 | ALSO REQUIRES 3.3V I/O SUPPLY | ALSO REQUIRES 3.3V I/O SUPPLY | ALSO REQUIRES 3.3V I/O SUPPLY | ALSO REQUIRES 3.3V I/O SUPPLY | ALSO REQUIRES 3.3V I/O SUPPLY |
| 最大时钟频率 (fCLK) | 83 MHz | 66 MHz | 100 MHz | 100 MHz | 83 MHz |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-PQFP-G100 | R-PQFP-G100 | R-PQFP-G100 | R-PQFP-G100 | R-PQFP-G100 |
| JESD-609代码 | e3 | e3 | e3 | e3 | e3 |
| 长度 | 20 mm | 20 mm | 20 mm | 20 mm | 20 mm |
| 内存密度 | 2097152 bit | 2097152 bit | 2097152 bit | 2097152 bit | 2097152 bit |
| 内存集成电路类型 | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM | CACHE SRAM |
| 内存宽度 | 32 | 32 | 32 | 32 | 32 |
| 湿度敏感等级 | 3 | 3 | 3 | 3 | 3 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 100 | 100 | 100 | 100 | 100 |
| 字数 | 65536 words | 65536 words | 65536 words | 65536 words | 65536 words |
| 字数代码 | 64000 | 64000 | 64000 | 64000 | 64000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 64KX32 | 64KX32 | 64KX32 | 64KX32 | 64KX32 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 可输出 | YES | YES | YES | YES | YES |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | LQFP | LQFP | LQFP | LQFP | LQFP |
| 封装等效代码 | QFP100,.63X.87 | QFP100,.63X.87 | QFP100,.63X.87 | QFP100,.63X.87 | QFP100,.63X.87 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLATPACK, LOW PROFILE | FLATPACK, LOW PROFILE | FLATPACK, LOW PROFILE | FLATPACK, LOW PROFILE | FLATPACK, LOW PROFILE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | 260 | 260 | 260 | 260 | 260 |
| 电源 | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 1.6 mm | 1.6 mm | 1.6 mm | 1.6 mm | 1.6 mm |
| 最大待机电流 | 0.015 A | 0.015 A | 0.015 A | 0.015 A | 0.015 A |
| 最小待机电流 | 3.14 V | 3.14 V | 3.14 V | 3.14 V | 3.14 V |
| 最大压摆率 | 0.18 mA | 0.16 mA | 0.2 mA | 0.2 mA | 0.18 mA |
| 最大供电电压 (Vsup) | 3.63 V | 3.63 V | 3.63 V | 3.63 V | 3.63 V |
| 最小供电电压 (Vsup) | 3.135 V | 3.135 V | 3.135 V | 3.135 V | 3.135 V |
| 标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 表面贴装 | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子面层 | Matte Tin (Sn) - annealed | Matte Tin (Sn) - annealed | Matte Tin (Sn) - annealed | Matte Tin (Sn) - annealed | Matte Tin (Sn) - annealed |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子节距 | 0.65 mm | 0.65 mm | 0.65 mm | 0.65 mm | 0.65 mm |
| 端子位置 | QUAD | QUAD | QUAD | QUAD | QUAD |
| 处于峰值回流温度下的最长时间 | 30 | 30 | 30 | 30 | 30 |
| 宽度 | 14 mm | 14 mm | 14 mm | 14 mm | 14 mm |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 |
工控电子
聊聊、笑笑、闹闹
分立器件
嵌入式系统
单片机
嵌入式系统
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
