EMIF02-MIC03C2
2 line EMI filter and ESD protection
Main product characteristics
Where EMI filtering in ESD sensitive equipment is
required:
■
■
Mobile phones and communication systems
Computers and printers and MCU Boards
Description
The EMIF02-MIC03C2 is a highly integrated
device designed to suppress EMI/RFI noise in all
systems subjected to electromagnetic
interference. The Flip-Chip packaging means the
package size is equal to the die size.
This filter includes ESD protection circuitry, which
prevents damage to the application when it is
subjected to ESD surges up to 15 kV.
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Benefits
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Coated Flip-Chip package
(about 20 times real size)
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Pin configuration (Bump side)
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EMI symmetrical (I/O) low-pass filter
Very low PCB space consumption:
1.07 mm x 1.47 mm
Very thin package: 0.695 mm
3 2 1
I1
GND
O2
O1
High efficiency EMI filter (-35 dB @ 900 MHz)
A
B
C
Coating resin on back side and lead free
package
High efficiency in ESD suppression
High reliability offered by monolithic integration
High reduction of parasitic elements through
integration and wafer level packaging.
Complies with following standards:
IEC 61000-4-2
level 4 input pins
15 kV
8 kV
2 kV
2 kV
(air discharge)
(contact discharge
(air discharge)
(contact discharge
level 1 output pins
MIL STD 883G - Method 3015-7 Class 3
November 2006
Rev 1
www.st.com
1/7
Characteristics
EMIF02-MIC03C2
1
Characteristics
Figure 1.
Basic cell configuration
Low-pass Filter
Input
Output
Ri/o = 68
Ω
Cline = 100 pF
GND
GND
GND
Table 1.
Symbol
T
j
T
op
T
stg
Absolute ratings (limiting values)
Parameter
Maximum junction temperature
Operating temperature range
Storage temperature range
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Symbol
V
BR
I
RM
Parameters
Breakdown voltage
Leakage current @ V
RM
Stand-off voltage
V
RM
V
CL
R
d
Clamping voltage
Dynamic impedance
Peak pulse current
I
PP
R
I/O
Series resistance between input and output
Input capacitance per line
C
line
Symbol
V
BR
I
RM
Test conditions
Min
6
I
R
= 1 mA
V
RM
= 3 V per line
Tolerance
V
R
= 0 V
R
I/O
C
line
Table 2.
Electrical characteristics (T
amb
= 25° C)
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125
I
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PP
Value
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Unit
°C
°C
°C
-40 to +85
-55 to +150
P
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V
CL
V
BR
V
RM
I
R
I
RM
I
RM
I
R
V
RM
V
BR
V
CL
V
I
PP
Typ
8
Max
Unit
V
500
68
100
nA
Ω
pF
2/7
EMIF02-MIC03C2
Characteristics
Figure 2.
0.00
-5.00
-10.00
S21 (dB) attenuation measurement Figure 3.
dB
0.00
-10.00
-20.00
Analog crosstalk measurement
dB
-15.00
-20.00
-25.00
-30.00
-35.00
-60.00
-30.00
-40.00
-50.00
-40.00
-45.00
-50.00
100.0k
-70.00
F (Hz)
1.0M
10.0M
100.0M
1.0G
F (Hz)
-80.00
100.0k
1.0M
10.0M
100.0M
1.0G
Figure 4.
ESD response to IEC 61000-4-2
(+15 kV air discharge) on one
input V
in
and one output V
out
Figure 5.
ESD response to IEC 61000-4-2
(- 15 kV air discharge) on one
input V
in
and one output V
out
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Figure 6.
C(pF)
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Line capacitance versus applied
voltage
140
120
100
80
60
40
20
0
F=1MHz
V
osc
=30mV
RMS
T
j
=25°C
V
R
(V)
0
1
2
3
4
5
3/7
EMIF02-MIC03C2
Ordering information scheme
2
Ordering information scheme
EMIF
EMI Filter
Number of lines
Information
3 letters = application
2 digits = version
yy
-
xxx zz
Cx
Package
C = Coated Flip-Chip
x = 2: Leadfree Pitch = 500 µm, Bump = 315 µm
3
Package information
Figure 9.
Flip-Chip Dimensions
500 µm ± 10
250 µm ± 10
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x x z
315 µm ± 50
b
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695 µm ± 50
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50
0
1.07 mm ± 50 µm
Figure 10. Marking
Dot, ST logo
xx = marking
z = manufacturing location
yww = datecode
(y = year ww = week)
1.47 mm ± 50 µm
µm
±
15
Figure 11. Footprint recommendation
Copper pad Diameter:
250µm recommended, 300 µm max
E
Solder stencil opening: 330 µm
y ww
Solder mask opening recommendation:
340 µm min for 315 µm copper pad diameter
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