USBULC6-2F7
2-line Transil™ ultralow capacitance protection for high speed USB
Datasheet
production data
Description
The USBULC6-2F7 is a monolithic, application
specific discrete device dedicated to ESD
protection of high speed interfaces.
Its ultra low line capacitance secures a high level
of signal integrity without compromising the
protection of downstream sensitive chips against
the most stringently characterized ESD strikes.
Figure 1. Pin layout (bump side)
Flip Chip
(4 bumps)
Features
Ultralow capacitance (1pF)
Two data lines (D+ and D-) protected against
ESD
Breakdown voltage V
BR
= 5.5 V min.
Flip Chip 350 µm pitch, lead-free
Very low leakage current
Very small PCB area
RoHS compliant
A
B
1
2
Figure 2. Device configuration
A1
B1
Benefits
Minimized impact on rise and fall times for
maximum data integrity
Low PCB space occupation
Higher reliability offered by monolithic
integration
Complies with the following standards
IEC 61000-4-2 level 4:
– ±8 kV (contact discharge)
MIL STD 883G - Method 3015.7
– ±25 kV (Human body model)
A2
B2
Note: B1 and B2 bumps must be grounded on
the PCB together
Application
This device is designed to protect a high speed
USB port in wireless handsets (up to 480 Mb/s
according to USB 2.0 high speed specification).
TM: Transil is a trademark of STMicroelectronics
December 2013
This is information on a product in full production.
DocID025264 Rev 1
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www.st.com
Characteristics
USBULC6-2F7
1
Characteristics
Table 1. Absolute maximum ratings (T
amb
= 25 °C)
Symbol
Parameter
ESD discharge IEC 61000-4-2:
Contact discharge
Air discharge
Peak pulse power dissipation (8/20 µs)
Operation junction temperature range
Storage temperature range
Maximum lead temperature for soldering during 10 s
Value
Unit
V
PP
P
PP
T
j
T
stg
T
L(1)
10
30
50
-40 to +150
-55 to +150
260
kV
W
°C
°C
°C
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Figure 3. Electrical characteristics - definitions
I
Symbol
V
BR
I
RM
V
RM
V
CL
I
PP
C
LINE
V
F
Parameter
Breakdown voltage
Leakage current @ V
RM
Stand-off voltage
Clamping voltage
Peak pulse current
Line capacitance
Forward voltage drop
I
F
V
CL
V
BR
V
RM
I
RM
V
F
V
I
PP
Table 2. Electrical characteristics - values (T
amb
= 25 °C)
Symbol
V
BR
I
RM
C
line
R
d
I
R
= 1 mA
V
RM
= 3 V
F = [200 MHz - 3000MHz], V
R
= 0 V
I/O to GND
Dynamic resistance, pulse width 100 ns
GND to I/O
0.56
Test conditions
Min.
5.5
-
-
Typ.
-
-
1.0
0.67
Max. Unit
9
70
1.35
V
nA
pF
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DocID025264 Rev 1
USBULC6-2F7
Characteristics
Figure 4. Eye diagram, board only (according to
USB high speed specification)
200 ps/div
Figure 5. Eye diagram, board with
USBULC6-2F7 (according to USB 2.0 high
speed specification)
200 ps/div
347.2 mV/div
347.2 mV/div
Figure 6. ESD response to IEC 61000-4-2 (+8 kV Figure 7. ESD response to IEC 61000-4-2 (-8 kV
contact discharge)
(1)
contact discharge)
(1)
20 V/div
20 V/div
105 V
1
-1 V
4
V
PP
: ESD peak voltage
2
V
CL
:clamping voltage @ 30 ns
3
V
CL
:clamping voltage @ 60 ns
4
V
CL
:clamping voltage @ 100 ns
1
-8 V
2
-5 V
3
1
2
3
4
V
PP
: ESD peak voltage
V
CL
:clamping voltage @ 30 ns
V
CL
:clamping voltage @ 60 ns
V
CL
:clamping voltage @ 100 ns
23 V
2
17 V
3
9 V
4
-84 V
1
20 ns/div
20 ns/div
1. Test board connected to oscilloscope through 50
cable and 20 dB + 6 dB attenuator. ESD generator return path
connected to PCB ground plane.
Figure 8. Junction capacitance versus
frequency (typical values)
1.5
C (pF)
Tj = 25 °C
VOSC = 30 mV
IO / GND
IO / IO
Figure 9. Analog crosstalk measurement
dB
0
- 10
- 20
- 30
- 40
- 50
- 60
- 70
- 80
- 90
-100
-110
-120
100k
1M
10M
100M
1G
1.0
0.5
F(MHz)
F (Hz)
10G
0.0
1
10
100
1000
Xtalk
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Characteristics
USBULC6-2F7
Figure 10. Peak pulse power versus initial
junction temperature (maximum values)
P
100
90
80
70
60
50
40
30
20
10
0
0
(W)
Figure 11. Peak pulse power versus exponential
pulse duration (maximum values)
P
1000
PP
(W)
Tj initial = 25 ° C
PP
8/20 µs
100
10
Tj (°C)
25
50
75
100
125
150
175
tp(µs)
1
10
100
1000
Figure 12. Clamping voltage versus peak pulse
current (typical values)
I
(A)
PP
Tj initial = 25 °C
8/20 µs
Figure 13. Leakage current versus junction
temperature (typical values)
I
R
(nA)
VR = VRM = 3 V
IO / GND
10
1000
100
1
10
1
VCL(V)
0.1
6
7
8
9
10
11
12
13
14
15
0.1
25
50
75
100
125
Tj (°C)
150
Figure 14. S21 (dB) attenuation measurement
0
dB
-1
-2
20
25
Figure 15. TLP measurement
IPP (A)
-3
-4
15
-5
-6
-7
GND to I/O
10
-8
-9
5
I/O to GND
VCL (V)
F (Hz)
- 10
100 k
1M
A1
10 M
100 M
B1
1G
10 G
0
0
5
10
15
20
25
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USBULC6-2F7
Application information
2
Application information
Figure 16. Application diagram
USB CONNECTOR
Vbus
Vbus
B2
A2
D-
D-
D+
B1
A1
D+
GND
GND
TO USB TRANSCEIVER
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