Metal-Oxide Varistors
(MOVs)
High Reliability Varistors
High Reliability Varistors
Description
QPL
Littelfuse High Reliability Varistors offer the latest in
increased product performance, and are available for
applications requiring quality and reliability assurance
levels consistent with military or other standards
(MIL-STD-19500, MIL-STD-202). Additionally, Littelfuse
Varistors are inherently radiation hardened compared
to Silicon Diode suppressors as illustrated in Figure 1.
ZA Series
Littelfuse High-Reliability Varistors involve four categories:
1
Qualified Products List (QPL) MIL-R-83530
(4 items presently available)
Littelfuse High Reliability Series TX Equivalents
(29 items presently available)
Custom Types
Processed to customer-specific requirements
- (SCD) or to Standard Military Flow
Agency Approvals
•
QPL
2
3
Additional Information
Datasheet
Resources
Samples
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and
test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications.
Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/14/17
High Reliability Varistors
Metal-Oxide Varistors
(MOVs)
1) DSSC Qualified Parts List (QPL) MIL-R-83530
This series of varistors are screened and conditioned in accordance with MIL
-R-83530. Manufacturing system conforms to
MIL-I-45208; MIL
-Q-9858.
Table 1. MIL-R-83530/1 Ratings and Characteristics
Part
Number
M83530/
1-2000B
1-2200D
1-4300E
1-5100E
Nominal
Varistor
Voltage
(V)
200
220
430
510
Tolerance
(%)
-/+10
+10, -5
+5, -10
+5, -10
Voltage Rating
(V)
(RMS)
130
150
275
320
(DC)
175
200
369
420
Energy
Rating (J)
50
55
100
120
Clamping
Voltage at
100A (V)
325
360
680
810
Clamping
Nearest
Capacitance Voltage At
Commercial
at 1MHz (pF) Peak Current
Equivalent
Rating (V)
3800
3200
1800
1500
570
650
1200
1450
V130LA20B
V150LA20B
V275LA40B
V320LA40B
2) Littelfuse High Reliability Series TX Equivalents
Table 2. Available TX Model Types
TX Model
V8ZTX1
V8ZTX2
V12ZTX1
V12ZTX2
V22ZTX1
V22ZTX3
V24ZTX50
V33ZTX1
V33ZTX5
V33ZTX70
V68ZTX2
V68ZTX10
V82ZTX2
V82ZTX12
Model Size
7mm
10mm
7mm
10mm
7mm
14mm
20mm
7mm
14mm
20mm
7mm
14mm
7mm
14mm
Device
Mark
8TX1
8TX2
12TX1
12TX2
22TX1
22TX3
24TX50
33TX1
33TX5
33TX70
68TX2
68TX10
82TX2
82TX12
(See Section
4) Nearest
Commercial
Equivalent
V8ZA1
V8ZA2
V12ZA1
V12ZA2
V22ZA1
V22ZA3
V24ZA50
V33ZA1
V33ZA5
V33ZA70
V68ZA2
V68ZA10
V82ZA2
V82ZA12
TX Model
V130LTX2
V130LTX10A
V130LTX20B
V150LTX2
V150LTX10A
V150LTX20B
V250LTX4
V250LTX20A
V250LTX40B
V420LTX20A
V420LTX40B
V480LTX40A
V480LTX80B
V510LTX40A
V510LTX80B
Model Size
7mm
14mm
20mm
7mm
14mm
20mm
7mm
14mm
20mm
14mm
20mm
14mm
20mm
14mm
20mm
Device
Mark
130TX2
130L10
130TX20
150L2
150TX10
150L20
250L4
250L20
250L40
420L20
420L40
480L40
480TX80
510L40
510L80
(See Section
4) Nearest
Commercial
Equivalent
V130LA2
V130LA10A
V130LA20A
V150LA2
V150LA10A
V150LA20B
V250LA4
V250LA20A
V250LA40B
V420LA20A
V420LA40B
V480LA40A
V480LA80B
V510LA40A
V510LA80B
The TX Series of varistors are 100% screened and conditioned in accordance with MIL
-STD-750. These tests are outlined in table 3 below
INSPECTION LOTS
FORMED AFTER
ASSEMBLY
>
LOTS PROPOSED
FOR TX TYPES
>
100% SCREENING
>
REVIEW OF DATA
TX PREPARA TION
FOR DELIVERY
>
QA ACCEPTANCE
SAMPLE PER
APPLICABLE DEVICE
SPECIFICATION
Table 3. TX Equivalents Series 100% Screening
MIL-STD-105
LEVEL
Electrical (Bidirectional)
V
N(DC)
, V
C
(Per Specifications Table)
Dielectric Withstand Voltage
MIL–STD–202, Method 301, 2500V Min. at 1.0
µA
DC
Solderability
MIL–STD–202, Method 208, No Aging, Non-Activated
II
-
-
AQL
0.1
-
-
LTPD
-
15
15
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/14/17
Metal-Oxide Varistors
(MOVs)
High Reliability Varistors
Table 4. Quality Assurance Acceptance Tests
Screen
High Temperature Life
(Stabilization Bake)
Thermal Shock
(Temperature Cycling)
Humidity Life
Interim Electrical V
N(DC)
V
C
(Note 3)
Power Burn-In
Final Electrical +V
N(DC)
V
C
(Note 3)
External Visual
Examination
2071
1038
1051
No dwell is required at 25°C. Test condition A1, 5 cycles -55°C to +125°C
(extremes) >10 minutes.
85°C, 85% RH, 168 Hrs.
As specified, but including delta parameter as a minimum.
Condition B, 85°C, rated V
M(AC)
, 72 hours min.
As specified - All parameter measurements must be completed within 96
hours after removal from burn-in conditions.
To be performed after complete marking.
100%
100%
100% Screen
100%
100% Screen
100%
MIL-STD-750
Method
1032
Condition
24 hours min at max rated storage temperature.
TX Requirements
100%
3) Custom Types
In addition to our comprehensive high-reliability series, Littelfuse can screen and condition to specific requirements.
Additional mechanical and environmental capabilities are defined in Table 5.
Table 5. Mechanical And Environmental Capabilities (Typical Conditions)
Test Name
Terminal Strength
Drop Shock
Variable Frequency Vibration
Constant Acceleration
Salt Atmosphere
Soldering Heat/Solderability
Resistance to Solvents
Flammability
Cyclical Moisture Resistance
Steady-State Moisture Resistance
Biased Moisture Resistance
Temperature Cycle
High-Temperature Life (Nonoperating)
Burn-In
Hermetic Seal
Test Method
MIL
-STD-750-2036
MIL
-STD-750-2016
MIL
-STD-750-2056
MIL
-STD-750-2006
MIL
-STD-750-1041
MIL
-STD-750-2031/2026
MIL–STD–202-215
MIL–STD–202-111
MIL–STD–202-106
MIL–STD–750-1021.3
MIL–STD–750-1021.3
MIL–STD–202-107
MIL
-STD-750-1032
MIL
-STD-750-1038
MIL
-STD-750-1071
Description
3 Bends, 90° Arc, 16oz. Weight
1500g’s, 0.5ms, 5 Pulses, X
1
, V
1
, Z
1
20g’s, 100-2000Hz, X
1
, V
1
, Z
1
V
2
, 20,000g’s Min
35°C, 24Hr, 10-50g/m
2
Day
260°C, 10s, 3 Cycles, Test Marking
Permanence, 3 Solvents
15s Torching, 10s to Flameout
10 Days
85/85 96Hr
Not Recommended for High-Voltage Types
-55°C to 125°C, 5 Cycles
125°C, 24Hr
Rated Temperature and V
RMS
Condition D
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/14/17
High Reliability Varistors
Metal-Oxide Varistors
(MOVs)
Radiation Hardness
For space applications, an extremely important property of a
protection device is its response to imposed radiation effects.
Electron Irradiation
A Littelfuse MOV and a Silicon transient suppression diode
were exposed to electron irradiation. The V-I curves, before
and after test, are shown below.
Counterclockwise rotation of the V-I characteristics is
observed in Silicon devices at high neutron irradiation
levels; in other words, increasing leakage at low current
levels and increasing clamping voltage at higher current
levels.
The solid and open circles for a given fluence represent the
high and low breakdown currents for the sample of devices
tested. Note that there is a marked decrease in current (or
energy) handling capability with increased neutron fluence.
Failure threshold of Silicon semiconductor junctions is
further reduced when high or rapidly increasing currents
are applied. Junctions develop hot spots, which enlarge
until a short occurs if current is not limited or quickly
removed.
The characteristic voltage current relationship of a P– N
Junction is shown below.
I
10
8
10
6
10
4
CURRENT (A)
10
2
LITTELFUSE MOV
200
V
100
80
60
40
PRE TEST
10
8
RADS,
18MeV ELECTRONS
SILICON
TRANSIENT
SUPPRESSION
DIODE
It
20
is
SATURATION
CURRENT
FIGURE 1. RADIATION SENSITIVITY OF LITTELFUSE V130LA1
AND SILICON TRANSIENT SUPPRESSION DIODE
FORWARD
BIAS
BREAKDOWN
VOLTAGE
V
REDUCTION IN
FAILURE STRESSHOLD
BY RADIAL
SECONDARY
BREAKDOWN
REVERSE
BIAS
apparent that the Littelfuse MOV was virtually unaffected,
even at the extremely high dose of 108 rads, while the
Silicon transient suppression diode showed a dramatic
increase in leakage current.
Neutron Effects
A second MOV-Zener comparison was made in response to
neutron fluence. The selected devices were equal in area.
Figure 2 shows the clamping voltage response of the MOV
and the Zener to neutron irradiation to as high as 1015 N/
cm
2
. It is apparent that in contrast to the large change in
the Zener, the MOV is unaltered. At highercurrents where
the MOV’s clamping voltage is again unchanged, the Zener
device clamping voltage increases by as much as 36%.
300
200 VARISTOR V130A2
INITIAL AT 10
15
100
80
VOLTS
60
50
40
30
20
1.5K 200 INITIAL
FIGURE 3. V-I CHARACTERISTIC OF PN-JUNCTION
1.5K 200
AT 10
12
At low reverse voltage, the device will conduct very little
current (the saturation current). At higher reverse voltage
VBO (breakdown voltage),the current increases rapidly as
the electrons are either pulled by the electric field (Zener
effect) or knocked out by other electrons (avalanching). A
further increase in voltage causes the device to exhibit a
negative resistance characteristic leading to secondary
breakdown.
This manifests itself through the formation of hotspots,
and irreversible damage occurs. This failure threshold
decreases under neutron irradiation for Zeners, but not for
Z
N
O Varistors.
Gamma Radiation
1.5K 200
AT 10
13
1.5K 200
AT 10
14
1.5K 200
AT 10
15
10
10
10
10
8
10
6
10
7
AMPERES
10
5
10
4
10
3
FIGURE 2. V-I CHARACTERISTIC RESPONSE TO NEUTRON
IRRADIATION FOR MOV AND ZENER DIODE
DEVICES
Radiation damage studies were performed on type
V130LA2 varistors. Emission spectra and V-I characteristics
were collected before and after irradiation with 106 rads
Co60 gamma radiation. Both show no change, within
experimental error, after irradiation.
© 2017 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 09/14/17
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