CM1230
2, 4, and 8-Channel
Low-Capacitance ESD
Protection Array
Product Description
The CM1230 is a family of 2, 4 and 8 channel, very low capacitance
ESD protection diode arrays in a CSP form factor. It is ideal for
protecting systems with high data and clock rates or for circuits that
need low capacitive loading. Each channel consists of a pair of ESD
diodes that act as clamp diodes to steer ESD current pulses to either the
positive or negative supply rail. A Zener diode is integrated between the
positive and negative supply rails. The V
CC
rail is protected from ESD
strikes and eliminates the need for a bypass capacitor to absorb positive
ESD strikes to ground. Each channel can safely dissipate ESD strikes of
±8
kV, meeting the Level 4 requirement of the IEC61000−4−2
international standard as well as
±15
kV air discharges per the
IEC61000−4−2 specification. Using the MIL−STD−883 (Method
3015) specification for Human Body Model (HBM) ESD, the pins are
protected for contact discharges at greater than
±15
kV.
This device is well−suited for next generation wireless handsets that
implement high−speed serial interface solutions for the LCD display
and camera interfaces. In these designs, a tolerance above 1.5 pF
cannot be tolerated when high data rates are transferred between the
baseband choppiest and the LCD driver/controller Is. Higher
capacitive loading normally causes the rise and fall times to slow
which hampers the functionality of circuit and operation of the
wireless handset. The CM1230 incorporates
OptiGuardt
which
results in improved reliability at assembly. The CM1230 is available in
a s p a c e
−s
a v i n g , l o w p r o f i l e C h i p S c a l e P a c k a g e w i t h
RoHS−compliant, lead−free finishing.
Features
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WLCSP4
CP SUFFIX
CASE 567CS
WLCSP6
CP SUFFIX
CASE 567BB
WLCSP10
CP SUFFIX
CASE 567BG
MARKING DIAGRAM
L MG
G
CSP−4
L30 MG
G
CSP−6
L308 MG
G
CSP−10
Lxxx
= Specific Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
CM1230−02CP
(Note 1)
CM1230−J2CP
(Note 1)
CM1230−04CP
CM1230−08CP
Package
Shipping
†
CSP−4
3,500/Tape & Reel
(Pb−Free)
CSP−4
3,500/Tape & Reel
(Pb−Free)
CSP−6
3,500/Tape & Reel
(Pb−Free)
CSP−10 3,500/Tape & Reel
(Pb−Free)
•
Two, Four, and Eight Channels of ESD Protection
•
Provides ESD Protection to IEC61000−4−2 Level 4
•
•
•
•
•
•
•
•
•
±8
kV Contact Discharge &
±15
kV Air Discharge
Low Loading Capacitance of 0.8 pF Typical
Minimal Capacitance Change with Temperature and Voltage
Channel I/O to GND Capacitance Difference of 0.02 pF Typical is
Ideal for Differential Signals
Channel I/O to I/O Capacitance 0.15 pF Typical
Zener Diode Protects Supply Rail and Eliminates the Need for
External By−pass Capacitors
Each I/O Pin Can Withstand Over 1000 ESD Strikes*
Available in 4, 6 and 10 Bump Chip Scale Packages (CSP)
OptiGuardt
Coated for Improved Reliability at Assembly
These Devices are Pb−Free and are RoHS Compliant
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*Standard test condition is IEC61000−4−2 level 4 test
circuit with each (A
OUT
/B
OUT
) pin subjected to
±12
kV contact discharge for 1000 pulses. Dis-
charges are timed at 1 second intervals and all 1000
strikes are completed in one continuous test run.
1. CM1230−02CP and CM1230−J2CP are the same
mechanical package. Only difference is the Pin 1
orientation (‘+’ mark) on the tape and reel.
Applications
•
I/O Port Protection for Mobile Handsets, Notebook Computers,
DSCs, MP3 Players, PDAs, etc. Including USB, 1394 and Serial ATA
•
LCD and Camera Data Lines in Wireless Handsets that
•
Handheld PCs/PDAs
use High−speed Serial Interfaces
•
LCD and Camera Modules
•
Wireless Handsets
©
Semiconductor Components Industries, LLC, 2012
January, 2012
−
Rev. 4
1
Publication Order Number:
CM1230/D
CM1230
SPECIFICATIONS
Table 2. ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Supply Voltage (V
P
−
V
N
)
Operating Temperature Range
Storage Temperature Range
DC Voltage at any Channel Input
Rating
6.0
–40 to +85
–65 to +150
(V
N
−
0.5) to (V
P
+ 0.5)
Units
V
°C
°C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 3. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature Range
Rating
–40 to +85
Units
°C
Table 4. ELECTRICAL OPERATING CHARACTERISTICS
(Note2)
Symbol
V
P
I
P
V
F
Parameter
Operating Supply Voltage (V
P
−V
N
)
Operating Supply Current
Diode Forward Voltage
Top Diode
Bottom Diode
Channel Leakage Current
Channel Input Capacitance
Channel Input Capacitance Matching
Mutual Capacitance between signal pin
and adjacent signal pin
In−system ESD Protection
Peak Discharge Voltage at any
channel input, in system
a) Contact discharge per
IEC 61000−4−2 standard
b) Human Body Model,
MIL−STD−883, Method 3015
Channel Clamp Voltage
Positive Transients
Negative Transients
Dynamic Resistance
Positive Transients
Negative Transients
(V
P
−V
N
) = 3.3 V
I
F
= 8 mA; T
A
= 25°C
0.60
0.60
0.80
0.80
±0.1
0.80
0.02
0.15
Conditions
Min
Typ
3.3
Max
5.5
8.0
0.95
0.95
±1.0
1.2
Units
V
mA
V
I
LEAK
C
IN
DC
IN
C
MUTUAL
V
ESD
T
A
= 25°C; V
P
= 5 V, V
N
= 0 V, V
IN
= 0 V to 5 V
At 1 MHz, V
P
= 3.3 V, V
N
= 0 V, V
IN
= 1.65 V
At 1 MHz, V
P
= 3.3 V, V
N
= 0 V, V
IN
= 1.65 V
At 1 MHz, V
P
= 3.3 V, V
N
= 0 V, V
IN
= 1.65 V
mA
pF
pF
pF
kV
T
A
= 25°C (Notes 4 and 5)
T
A
= 25°C (Notes 3 and 5)
T
A
= 25°C, I
PP
= 1A, t
P
= 8/20
mS
(Note 5)
I
PP
= 1 A, t
P
= 8/20
mS
Any I/O pin to Ground (Note 5)
±8
±15
V
V
CL
+9.8
–1.8
0.76
0.56
R
DYN
W
2.
3.
4.
5.
6.
All parameters specified at T
A
= –40°C to +85°C unless otherwise noted.
Human Body Model per MIL−STD−883, Method 3015, C
Discharge
= 100 pF, R
Discharge
= 1.5 KW, V
P
= 3.3 V, V
N
grounded.
Standard IEC 61000−4−2 with C
Discharge
= 150 pF, R
Discharge
= 330
W,
V
P
= 3.3 V, V
N
grounded.
These measurements performed with no external capacitor on V
P
.
Measured under pulsed conditions, pulse width = 0.7 ms, maximum current = 1.5 A.
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