SMTYF
Low forward voltage TVS Transky™
Features
■
High peak pulse power:
– 600 W (10/1000 µs)
– 4000 W (8/20 µs)
Stand-off voltage 5 or 12 V
Low forward voltage: 0.48 V @ 0.85 A @ 25 °C
Low clamping factor V
CL
/V
BR
Fast response time
Very thin package (1.0 mm overall component
height)
ECOPACK2
®
halogen-free package
K
A
■
■
■
■
■
■
A
K
Unidirectional
Complies with the following standards:
■
IEC 61000-4-2 level 4:
– 15 kV (air discharge)
– 8 kV (contact discharge)
MIL STD 883E- Method 3015-7: class 3C
– Human body model
SMAflat
■
Description
The Transky is designed specifically for portable
equipment and miniaturized electronic devices
subject to ESD transient overvoltages.
The Transky combines the performance of a
Transil™ or TVS (transient voltage supressor) and
low forward voltage Schottky diode in a monolithic
structure.
TM:
Transky is a trademark of STMicroelectronics.
TM:
Transil is a trademark of STMicroelectronics.
September 2008
Rev 1
1/8
www.st.com
8
Characteristics
SMTYF
1
Table 1.
Symbol
V
PP
P
PP
I
FSM
T
stg
T
j
Characteristics
Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Parameter
IEC 61000-4-2 standard
Peak pulse power dissipation
(1)
Non repetitive surge peak forward current
Storage temperature range
Operating junction temperature range
Air discharge
Contact discharge
T
j initial
= T
amb
t
p
= 10 ms
T
j
= T
initial
= T
amb
Value
15
8
600
25
-65 to +175
-40 to +175
Unit
kV
W
A
°C
°C
1. 10/1000 µs pulse waveform
Table 2.
Symbol
R
th(j-l)
Thermal resistance
Parameter
Junction to leads
Value
20
Unit
°C/W
Table 3.
Symbol
V
BR
I
RM
V
RM
V
CL
R
d
I
PP
C
Electrical characteristics - parameters (T
amb
= 25 °C)
Parameter
Breakdown voltage
Leakage current @ V
RM
Stand-off voltage
Clamping voltage
Dynamic resistance
Peak pulse current
Capacitance
I
PP
V
CL
V
BR
V
RM
I
RM
I
R
V
F
V
I
I
F
Table 4.
Electrical characteristics - values (T
amb
= 25 °C)
V
F
max
I max@V
RM
(I
F
= 0.85 A)
RM
V
BR
@I
R(1)
min typ max
V
V
mA
V
CL
@I
PP
R
D(2)
V
CL
@I
PP
R
D(2)
αT
(3)
10/1000 µs 10/1000 µs 8/20 µs 8/20 µs
max
V
9.2
18.5
A
68
31
Ω
0.029
0.129
max
V
A
Ω
max
10-4/°C
5.7
7.8
Type
V
SMTYF5.0A
SMTYF12A
0.48
0.48
25 °C 85 °C
µA (max)
10
20
500
5 6.40 6.74 7.07 10
13.4 298 0.021
22.9 157 0.055
1200 12 13.2 13.7 14.3 1
1. Pulse test: t
p
<50ms.
2. To calculate maximum clamping voltage at other surge currents, use the following formula
V
CLmax
= R
D
x I
PP
+ V
BRmax
3. To calculate V
BR
versus junction temperature, use the following formula:
V
BR
@ T
j
= V
BR
@ 25 °C x (1 +
αT
x (T
j
- 25))
2/8
SMTYF
Figure 1.
Definition of Ipp pulse
%I
PP
100
Repetitive peak pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
Characteristics
50
0
t
r
t
p
t
Figure 2.
Relative peak power dissipation
versus initial junction temperature
Figure 3.
Peak pulse power versus
exponential pulse duration
(T
j
initial = 25 °C)
P
PP
[T
j
initial] / P
PP
[T
j
initial=25°C]
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
25
50
75
100
125
150
175
200
T
j
initial (°C)
P
PP
(kW)
100.0
T
j
initial = 25 °C
10.0
1.0
t
p
(ms)
0.1
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
3/8
Characteristics
Figure 4.
Clamping voltage versus peak pulse current (exponential waveform,
maximum values)
SMTYF
1.E+03
IPP(A)
T
j
initial=25 °C
SMTYF5.0A
SMTYF12A
1.E+02
1.E+01
1.E+00
tp = 8/20 µs
tp = 10/1000 µs
VCL(V)
1.E-01
5
10
15
20
25
Figure 5.
Junction capacitance versus
reverse applied voltage (typical
values)
Figure 6.
Forward voltage drop versus
forward current (typical values)
1.E+04
C(pF)
F=1 MHz
V
OSC
=30 mV
RMS
T
j
=25 °C
1.E+01
I
FM
(A)
SMTYF5.0A
1.E+00
T
j
=85 °C
T
j
=25 °C
SMTYF12A
1.E+03
1.E-01
V
R
(V)
1.E+02
1
10
100
V
FM
(V)
1.E-02
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
4/8
SMTYF
Characteristics
Figure 7.
Average power dissipation versus
ambient temperature
Figure 8.
Relative variation of thermal
impedance junction to ambient
versus pulse duration (printed
ciruit board FR4, S
Cu
= 1 cm
2
)
P(W)
4.5
R
th(j-a)
=R
th(j-l)
1.00
Z
th(j-a)
/R
th(j-a)
On recommended pad
layout
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
T
amb
(°C)
R
th(j-a)
=200 °C/W
(PCB FR4, recommended pad layout)
0.10
0.01
t
p
(S)
0.00
100
125
150
175
75
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
Figure 9.
Thermal resistance junction to
ambient versus copper surface
under each lead
(printed circuit board FR4,
copper thickness = 35 µm)
Figure 10. Leakage current versus junction
temperature (typical values)
R
th(j-a)
(°C/W)
200
180
160
140
120
100
80
60
40
20
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0
1.E+05
I
R
(µA)
1.E+04
SMTYF12A
1.E+03
SMTYF5.0A
1.E+02
1.E+01
S
CU
(cm
2
)
1.E+00
25
50
75
T
j
(°C)
100
125
150
V
R
=V
RM
175
5/8
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