Portable communications, computing and video equipment manufacturers are challenging
the semiconductor industry to develop increasingly smaller electronic components.
Bourns offers Transient Voltage Suppressor Array diodes for surge and ESD protection
applications, in compact chip package SOT23 size format. The TransientVoltage Supressor
Array series offers a choice of voltage types ranging from 3 V to 36 V. Bourns
®
Chip Diodes
conform to JEDEC standards, are easy to handle on standard pick and place equipment
and their flat configuration minimizes roll away.
The Bourns device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC 61000-4-5
(Surge) requirements.
Thermal Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter
Operating Temperature
Storage Temperature
Symbol
T
J
T
STG
Value
-55 to +150
-55 to +150
Unit
ºC
ºC
3
Electrical Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
CDSOT23-
Parameter
Breakdown Voltage @ 1 mA
Working Peak Voltage
Maximum Clamping Voltage
V
C
@ I
P
= 1 A
(1)
Maximum Clamping Voltage
@ 8/20 µs V
C
= I
PP (1)
Maximum Leakage Current
@ V
WM
Typical Capacitance - Unidirectional
@ 0 V, 1 MHz
Typical Capacitance - Bidirectional
@ 0 V, 1 MHz
ESD Protection (per IEC 61000-4-2)
Contact - Min.
Contact - Max.
Air - Min.
Air - Max.
Peak Pulse Power (t
p
@ 8/20 µs)
(2)
Forward Voltage @ 100 mA,
300 µs - Square Wave
(3)
Notes:
Symbol
V
BR
V
WM
V
F
V
F
I
D
C
j(SD)
C
j(SD)
Uni-
T03
Bi-
T03C
Uni-
T05
Bi-
T05C
Uni-
T08
Bi-
T08C
Uni-
T12
Bi-
T12C
Uni-
T15
Bi-
T15C
Uni-
T24
Bi-
T24C
Uni-
T36
Bi-
T36C
1. See Pulse Wave Form.
2. See Peak Pulse Power vs. Pulse Time.
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
01L
E28
configurations
n
ESD protection 30 kV max.
CDSOT23-T03~T36C - TVS Diode Array Series
2
1
3
2
1
Unit
V
V
V
V
µA
pF
pF
4.0
3.3
7.0
10.9 V
@ 43 A
125
500
300
6.0
5.0
9.8
13.5 V
@ 42 A
20
350
210
8.5
8.0
13.4
16.9 V
@ 34 A
10
250
150
13.3
12.0
19.0
25.9 V
@ 21 A
2
150
90
±8
±30
±15
±30
500
1.5
16.7
15.0
24.0
30.0 V
@ 17 A
1
100
60
26.7
24.0
43.0
49.0 V
@ 12 A
1
88
63
40.0
36.0
51.0
76.8 V
@9A
1
80
60
ESD
P
PP
V
F
kV
W
V
3. Only applies to unidirectional devices.
4. Part numbers with a “C” suffix are bidirectional devices, i.e., CDSOT23-T03C.
CDSOT23-T03~T36C - TVS Diode Array Series
Product Dimensions
Recommended Footprint
A
B
This is a molded JEDEC SOT-323 package with 100 % Matte Sn
plating on the lead frame. It weighs approximately 0.6 g and has a
flammability rating of UL 94V-0.
A
B
DIMENSIONS =
MILLIMETERS
(INCHES)
3
C
1
2
D
SEE
DETAIL
C
A
E
F
E
GAUGE
PLANE
G
H
DETAIL
A
L
D
DIMENSIONS =
MILLIMETERS
(INCHES)
I
J
0 ° TO 8 °
K
SEATING PLANE
Dimensions
A
B
C
D
E
0.95
(0.037)
0.95
(0.037)
2.00
(0.079)
0.85
(0.033)
0.85
(0.033)
Dimensions
A
B
C
D
E
F
G
H
I
J
K
L
2.80 - 3.00
(0.110 - 0.118)
0.95
BSC
(0.037)...........
1.20 - 1.40
(0.047 - 0.055)
2.10 - 2.49
(0.083 - 0.098)
1.90
BSC
(0.075)...........
0.30 - 0.50
(0.012 - 0.019)
0.89 - 1.17
(0.035 - 0.046)
0.05 - 0.015
(0.002 - 0.006)
0.25
BSC
(0.010)...........
0.46 - 0.64
(0.018 - 0.025)
0.40 - 0.58
(0.016 - 0.023)
0.08 - 0.20
(0.003 - 0.008)
Typical Part Marking
2-DIGIT PRODUCT CODE:
E1 = CDSOT23-T03 G1 = CDSOT23-T03C
E2 = CDSOT23-T05 G2 = CDSOT23-T05C
E3 = CDSOT23-T08 G3 = CDSOT23-T08C
E4 = CDSOT23-T12 G4 = CDSOT23-T12C
E5 = CDSOT23-T15 G5 = CDSOT23-T15C
E6 = CDSOT23-T24 G6 = CDSOT23-T24C
E7 = CDSOT23-T36 G7 = CDSOT23-T36C
E1YWWL
MANUFACTURING
DATE CODE:
Y = YEAR
WW = WEEK
L = LOT CODE
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
CDSOT23-T03~T36C - TVS Diode Array Series
Performance Graphs
Peak Pulse Power vs. Pulse Time
10,000
P
PP
– Peak Pulse Current (kW)
P
PP
– Peak Pulse Current (kW)
10,000
1,000
1,000
100
100
10
0.01
10
0.01
500 W, 8/20 µs Waveform
500 W, 8/20 µs Waveform
Pulse Waveform
120
I
PP
– Peak Pulse Current (% of I
PP
)
PP
)
I
PP
– Peak Pulse Current (% of I
120
100
100
80
80
60
60
40
40
20
20
0
0
0
0
5
5
10
t
t
t
t
e
t
e
t
t
d
= t
|
I
PP
/2
t
d
= t
|
I
PP
/2
15
t – Time (µs)
2
Test Waveform Parameters
t
t
= 8 µs
Test Waveform Parameters
t
d
= 20 µs
t
t
= 8 µs
t
d
= 20 µs
1
1
10
100
1,000
1,000
10,000
10,000
20
20
25
25
1
30
30
t
d
– Pulse Duration (µs)
10
100
t
d
– Pulse Duration (µs)
10 t – Time (µs)
15
Power Derating Curve
100
100
80
80
60
60
40
40
20
20
0
0
0
0
25
25
50
75
Peak Pulse Power
8/20 µs
Peak Pulse Power
8/20 µs
Block Diagram
The device block diagrams below include the pin names and basic
electrical connections associated with each channel.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
CDSOT23-T03~T36C - TVS Diode Array Series
Packaging Information
The surface mount product is packaged in an 12 mm x 8 mm tape and reel format per EIA-481 standard.
P
0
P
1
d
Index
Hole
E
T
120 °
F
B
W
D2
D1
D
P
Trailer
A
Device
C
Leader
End
.......
.......
10 pitches (min.)
.......
.......
.......
.......
.......
.......
10 pitches (min.)
Start
W1
MM
DIMENSIONS:
(INCHES)
Direction of Feed
Devices are packed in accordance with EIA standard
RS-481-A.
Item
Carrier Width
Carrier Length
Carrier Depth
Sprocket Hole
Reel Outside Diameter
Reel Inner Diameter
Feed Hole Diameter
Sprocket Hole Position
Punch Hole Position
Punch Hole Pitch
Sprocket Hole Pitch
P
0
Embossment Center
P
1
Symbol
A
B
C
d
D
D1
D2
E
F
P
P0
d
SOT23
2.25 ± 0.10
(0.088 ± 0.004)
2.34 ± 0.10
(0.092 ± 0.004)
1.22 ± 0.10
(0.048 ± 0.004)
1.55 ± 0.05
(0.061 ± 0.002)
178
(7.008)
50.0
MIN.
(1.969)
13.0 ± 0.20
(0.512 ± 0.008)
1.75 ± 0.10
(0.069 ± 0.004)
3.50 ± 0.05
(0.138 ± 0.002)
4.00 ± 0.10
(0.157 ± 0.004)
4.00 ± 0.10
(0.157 ± 0.004)
E
Asia-Pacific:
Tel: +886-2 2562-4117
Email: asiacus@bourns.com
Europe:
Tel: +36 88 520 390
Email: eurocus@bourns.com
The Americas:
Tel: +1-951 781-5500
Email: americus@bourns.com
www.bourns.com
P1
Hole
Index
T
W
W1
--
2.00 ± 0.05
(0.079 ± 0.002)
F
Overall Tape Thickness
B
Tape Width
W
0.20 ± 0.10
(0.008 ± 0.004)
8.00 ± 0.20
(0.315 ± 0.008)
14.4
MAX.
(0.567)
3,000
Reel Width
Quantity per Reel
P
REV. 01/18
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in differ-
ent applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
中风发生时，一切都是以秒来计算的。延误治疗可能导致大脑重大损伤。伦敦大学医学院的一位博士Alistair McEwan已经获得行为医学研究所(Action Medical Research)的同意，为急救人员开发一种无线诊断系统来减少时间延误。感谢抗血栓药物，一些病人在病情发作的三个小时之内可以完全恢复。但出血也会导致中风。医生在治疗之前需要确定发病原因，因为不适当的服用抗血栓药物会加重损害。...[详细]
综合技术交流
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
