The Model PTVS3-xxxC-TH high voltage, bidirectional TVS diode series is designed for
use in AC line and high power DC bus clamping applications.
The devices are RoHS* compliant. They also meet IEC 61000-4-5 8/20 μs current
surge requirements.
Absolute Maximum Ratings (@ T
A
= 25 °C Unless Otherwise Noted)
Rating
Repetitive Standoff Voltage
Peak Current Rating per 8/20 µs IEC 61000-4-5
Operating Junction Temperature Range
Storage Temperature Range
Lead Temperature, Soldering (10 s)
PTVS3-380C-TH
PTVS3-430C-TH
Symbol
V
WM
I
PPM
T
S
T
J
Value
380
430
3
-55 to +125
-55 to +150
260
Unit
V
kA
°C
°C
°C
Electrical Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter
I
D
Standby Current
Test Conditions
V
D
= V
WM
I
BR
= 10 mA
I
PP
= 3 kA
F = 10 kHz,
V
d
= 1 Vrms
PTVS3-380C-TH
PTVS3-430C-TH
PTVS3-380C-TH
PTVS3-430C-TH
PTVS3-380C-TH
PTVS3-430C-TH
Min.
401
440
Typ.
422
465
520
580
0.1
0.35
0.40
Max.
10
443
490
Unit
µA
V
V
%/°C
nF
V
(BR)
Breakdown Voltage
V
C
Clamping Voltage
(1)
V
(BR)
Temperature Coefficient
C
Capacitance
(1)
V measured at the time which is coincident with the peak surge current.
C
Asia-Pacific:
Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116
EMEA:
Tel: +36 88 520 390 • Fax: +36 88 520 211
The Americas:
Tel: +1-951 781-5500 • Fax: +1-951 781-5700
www.bourns.com
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
PTVS3-xxxC-TH Series
High Voltage, High Current TVS Diodes
16
Performance Graphs
V-I Characteristic
14
Typical V
14
vs. Junction Temperature
BR
10
16
12
8
16
16
14
10
6
14
14
12
25 °C
12
48
12
10
10
26
8
10
25 °C
0 4
8
6
8
25 °C
6
-46
4
2
25 °C
4
25 °C
2
0
-64
2
0
-8-4
0
2
20 40 60 80 100 120 140 160
-4
-40 -20 0
-6
0
-4
-6
Junction Temperature (T
J
) - °C
-8
-4
-6
-40 -20 0
20 40 60 80 100 120 140 160
-8
-8
-40 -20 0
20 40 60 80 100 120 140 160
-6
-40 -20 0
20 40 60 80 100 120 140
Junction Temperature (T
J
) - °C
160
Percent
BR
V
BR
V Change
Percent PercentChangeof V
BR
Change
of V
of
Percent
of
Change
BR
16
12
Percent of V
BR
Change
-8
Junction Temperature (T
J
) - °C
-40 -20
Junction Temperature (T
100
°C
140 160
0
20 40 60 80
J
) -
120
Junction Temperature (T
J
) - °C
Current 8/20 µs Waveform per
Test Waveform Parameters
IEC 61000-4-5
100
120
120
t
t
120
80
100
100
100
60
120
80
80
80
40
100
60
60
60
20
40
80
40
40
20
0
60
20
20
0
0
40
0
0
0
I
PP
– Peak Pulse Current (% of I
PP
)
t
t
t
t
t
t
I
PP
– Peak Pulse
(% of I
PP
I
PP
Peak Pulse
of I
PP
) Current (%
I
PP
– Peak IPulse
–
Current (%
Current
(% of I
PP
)
of I
PP
)
PP
– Peak Pulse Current
)
120
Typical Surge Current Derating
110
100
120
120
120
Percent
Percent Percent of Rated Rated Value
of Rated Valueof Value
Percent of Rated Value
Percent of Rated Value
90
110
80
100
120
70
90
110
60
80
100
50
70
90
40
60
80
30
50
70
20
40
60
10
30
50
0
20
40
0
10
30
0
20 0
10
0
0
120
110
110
100
100
90
90
80
80
70
70
60
60
50
40 50
40
30
30
20
10 20
10
25
0
00
0
t
t
t
d
= t
|
I
PP
/2 20 µs
t
d
=
t
d
= t
|
I
PP
t
/2
e
t
t
PP
/2
t
d
d
=
=
|
t
I
|
I
PP
/2
t
d
= 20 µs
e
t
e
t
Test Waveform Parameters
e
t
t
t
= 8 µs
t
t
= 8 µs
t
d
= 20 µs
Test
Test Waveform Parameters
Waveform Parameters
t
8
t
µs
8 µs
t
e
t
=Test Waveform Parameters
t =
t = µs
t
d
=
t
208 µs
µs
t
d
= 20
5
0
5
10
5
5
10
15
20
25
30
50
25
25
75
50
100
75
125
100
150
125
150
150
175
175
175
175
20
0
0
50
75
100
Ambient Temperature (°C)
125
t =Time (µs)
25
30
t
d
–
15
t
|
I
PP
/2
20
10
15
20
25
10
– Time
15
20
25
30
30
t
(µs)
t – Time (µs)
t – Time (µs)
20
25
30
25
50
This graph shows the typical device surge current derating
versus ambient temperature when subjected to the 8/20 µs
25
50
75
100
125
150
175
current waveform per the IEC 61000-4-5 specification.
Ambient Temperature (°C)
This device is not intended for continuous operation at
temperatures above 125 °C.
Ambient Temperature (°C)
Ambient Temperature (°C)
150
75
100
125
Ambient Temperature (°C)
5
0
Typical Waveform Under
10
Surge
15
Current
t – Time (µs)
DC
Exposed
DC
Power
DC
Power
+
Exposed
Power
Interface
Interface
DC
Interface
Power
Exposed
-
-
Interface
-
DC
Power
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in
-
Interface
different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
+
+
+
+
Exposed
Exposed
Voltage
0
10
20
30
40
50
t – Time (µs)
-
PTVS3-xxxC-TH Series
High Voltage, High Current TVS Diodes
Product Dimensions
Epoxy encapsulation materials conform to UL 94V-0. Silver plated lead finish conforms to the solderability requirements of JESD22-B102,
Pb free solder. Package dimensions are shown below:
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
1 Introduction
In the mid-1960s, American scientist Maas conducted extensive experimental research on the charging process of open-cell batteries and proposed an acceptable charging curve for ...[详细]
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