Ordering number : ENN7312
FW503
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
FW503
DC / DC Converter Applications
Features
•
Package Dimensions
•
4.4
6.0
Composite type with a low ON-resistance, ultrahigh-
unit : mm
speed switching, low voltage drive, P-channel
2210
MOSFET and a short reverse recovery time, low
forward voltage schottky barrier diode facilitating high-
8
density mounting.
The FW503 incorporates two chips being equivalent to
the MCH3306 and the SBS004 in one package.
[FW503]
5
0.3
5.0
1.5
0.595
1.27
0.43
0.1
1.8max
1
4
0.2
1 : Anode
2 : No Contact
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Cathode
8 : Cathode
SANYO : SOP8
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
[SBD]
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
VRRM
VRSM
IO
IFSM
Tj
Tstg
50Hz sine wave, 1 cycle
15
15
1
10
--55 to +125
--55 to +125
V
V
A
A
°C
°C
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board
(2000mm
2
!0.8mm)
≤10S
-
-20
±10
--3
-
-12
2
150
--55 to +125
V
V
A
A
W
°C
°C
Symbol
Conditions
Ratings
Unit
Marking : W503
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2502 TS IM TA-100186 No.7312-1/5
FW503
Electrical Characteristics
at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[SBD]
Reverse Voltage
Forward Voltage
Reverse Current
Interterminal Capacitance
Reverse Recovery Time
VR
VF 1
VF 2
IR
C
trr
IR=1mA
IF=0.5A
IF=1A
VR=15V
VR=10V, f=1MHz cycle
IF=IR=100mA, See specified Test Circuit.
15
0.3
0.35
42
15
0.35
0.4
500
V
V
V
µA
pF
ns
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=--1mA, VGS=0
VDS=--20V, VGS=0
VGSS=±8V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=-
-3A
ID=--3A, VGS=--4.5V
ID=--2.5A, VGS=-
-2.5V
ID=--0.1A, VGS=-
-1.8V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=--10V, VGS=--4.5V, ID=--3A
VDS=--10V, VGS=--4.5V, ID=--3A
VDS=--10V, VGS=--4.5V, ID=--3A
IS=--3A, VGS=0
--20
--10
±10
--0.3
3.5
5
130
170
230
410
60
40
9
27
42
38
5.0
0.6
1.2
--1.0
--1.2
170
240
340
--1.0
V
µA
µA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Symbol
Conditions
Ratings
min
typ
max
Unit
Electrical Connection
8
7
6
5
(Top view)
1
2
3
4
1 : Anode
2 : No Contact
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Cathode
8 : Cathode
Switching Time Test Circuit
[MOSFET]
VIN
0V
--4.5V
VIN
ID= --3A
RL=3.3Ω
VDD= --10V
trr Test Circuit
[SBD]
Duty≤10%
100mA
10mA
trr
FW503
D
PW=10µs
D.C.≤1%
VOUT
10µs
G
--5V
P.G
50Ω
S
100mA
50Ω
100Ω
10Ω
No.7312-2/5
FW503
--3
ID -- VDS
--2
.5V
[MOSFET]
--3
ID -- VGS
[MOSFET]
VDS=10V
--3.0
V
--
V
1.8
--1.5V
Drain Current, ID -- A
--4.0
V
--2
Drain Current, ID -- A
--2
--10
.
0V
--1
--1
Ta=
7
0
0
--0.2
--0.4
--0.6
0
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
25
°
C
--0.8
--1.0
--25
°
C
--1.2
--1.4
VGS= --1.0V
5
°
C
--1.6
--1.8
--2.0
400
Drain-to-Source Voltage, VDS -- V
IT05278
RDS(on) -- VGS
[MOSFET]
Ta=25°C
400
IT05279
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
[MOSFET]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
350
300
250
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
350
300
250
200
150
100
50
0
--60
3.0A
200
ID=0.1A
150
100
50
0
0
--2
2.5A
=1.8V
, V GS
.1A
I D=0
=2.5V
A, V GS
.5
I D=2
.0V
V S=4
=3.0A, G
ID
--4
--6
--8
--10
--40
--20
0
20
40
60
80
100
120
140
160
10
IT05280
Gate-to-Source Voltage, VGS -- V
y
fs
-- ID
[MOSFET]
Ambient Temperature, Ta --
°C
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
IT05281
IF -- VSD
Forward Transfer Admittance,
y
fs -- S
7
5
3
2
VDS=10V
[MOSFET]
VGS=0
Ta
1.0
7
5
3
2
-25
=-
75
°
C
°
C
25
°
C
Forward Current, IF -- A
Ta
=7
5
°
C
25
°
C
--0.3
--0.4
--0.5
--0.6
--0.7
0.1
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Drain Current, ID -- A
5
3
5 7 --10
IT05282
--0.01
--0.2
--0.8
--25
°
C
--0.9
--1.0
--1.1
--1.2
SW Time -- ID
[MOSFET]
VDD= --10V
VGS= --4V
1000
7
5
Drain-to-Source Forward Voltage, VF -- V
IT05283
Ciss, Coss, Crss -- VDS
[MOSFET]
f=1MHz
Ciss
Switching Time, SW Time -- ns
2
100
7
5
3
2
Ciss, Coss, Crss -- pF
3
2
td (off)
tf
100
7
5
3
2
tr
td(on)
Coss
Crss
10
7
5
3
--0.1
10
2
3
5
7
--1.0
2
3
5
Drain Current, ID -- A
--10
IT05284
7
0
--2
--4
--6
--8
--10
--12
--14
--16
--18
--20
Drain-to-Source Voltage, VDS -- V
IT05285
No.7312-3/5
FW503
--10
VGS -- Qg
VDD= --10V
ID= --3A
[MOSFET]
3
2
--10
7
5
ASO
IDP= --12A
ID= --3A
[MOSFET]
<10µs
Gate-to-Source Voltage, VGS -- V
--8
10
Drain Current, ID -- A
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--6
1m
s
10
10
ms
0m
10
s
s
Operation in
this area is
limited by RDS(on).
0
µ
s
--4
--2
0
0
1
2
3
4
5
6
7
8
9
10
--0.01
--0.01
Ta=25°C
Single pulse
Mounted on a ceramic board (2000mm
2
!0.8mm)
≤10S
1unit
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Total Gate Charge, Qg -- nC
2.5
IT05286
PD -- Ta
Drain-to-Source Voltage, VDS
5 7 --10
2 3
IT05287
-- V
[MOSFET]
Allowable Power Dissipation, PD -- W
2.0
M
ou
nte
do
na
1.5
ce
ram
ic
bo
ard
1.0
(20
00
mm
2
!
0
0.5
.8m
m)
≤
1
0S
1u
n
it
160
0
0
20
40
60
80
100
120
140
Ambient Temperature, Ta --
°C
2
1.0
IT05288
IF -- VF
[SBD]
Reverse Current, IR -- mA
7
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0
IR -- VR
25
Ta=1
°
C
[SBD]
Forward Current, IF -- A
5
3
2
0.1
7
5
3
2
0.01
0
0.1
0.2
0.3
0.4
0.5
IT02957
100
°
C
Ta
=1
25
10
°
C
0
75
°
C
°
C
50
°
25
°
C
C
75
°
C
50
°C
25
°C
5
10
15
IT02958
Forward Voltage, VF -- V
Average Forward Power Dissipation, PF(AV) -- W
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.2
0.4
0.6
0.8
180°
360°
1.0
Reverse Voltage, VR -- V
3
2
PF(AV) -- IO
[SBD]
C -- VR
[SBD]
f=1MHz
Interterminal Capacitance, C -- pF
1.2
1.4
IT02959
(1)Rectangular wave
θ=60°
(2)Rectangular wave
θ=120°
(3)Rectangular wave
θ=180°
(4)Sine wave
θ=180°
Rectangular wave
θ
360°
100
7
5
3
2
10
7
5
3
2
1.0
1.0
(1)
(2) (4)
(3)
Sine wave
2
3
5
7
10
2
IT02960
Average Forward Current, IO -- A
Reverse Voltage, VR -- V
No.7312-4/5
FW503
12
IS -- t
IS
[SBD]
Surge Forward Current, IFSM(Peak) -- A
Current waveform 50Hz sine wave
10
8
20ms
t
6
4
2
0
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
Time, t -- s
IT00636
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 2002. Specifications and information herein are subject
to change without notice.
PS No.7312-5/5
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