Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
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the references to Nexperia, as shown below.
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use
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- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
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Thank you for your cooperation and
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Team Nexperia
PRTR5V0U2X
Ultra low capacitance double rail-to-rail ESD protection diode
Rev. 02 — 14 January 2008
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance rail-to-rail ElectroStatic Discharge (ESD) protection diode in a small
SOT143B Surface-Mounted Device (SMD) plastic package designed to protect two
Hi-Speed data lines or high-frequency signal lines from the damage caused by ESD and
other transients.
PRTR5V0U2X incorporates two pairs of ultra low capacitance rail-to-rail diodes as well as
an additional ESD protection diode to ensure signal line protection even if no supply
voltage is available.
1.2 Features
I
I
I
I
I
I
I
ESD protection of two Hi-Speed data lines or high-frequency signal lines
Ultra low input/output to ground capacitance: C
(I/O-GND)
= 1 pF
ESD protection up to 8 kV
IEC 61000-4-2, level 4 (ESD)
Very low clamping voltage due to an integrated additional ESD protection diode
Very low reverse current
Small SMD plastic package
1.3 Applications
I
I
I
I
I
I
I
USB 2.0 ports
Digital Video Interface (DVI) / High Definition Multimedia Interface (HDMI) interfaces
Mobile and cordless phones
Personal Digital Assistants (PDA)
Digital cameras
Wide Area Network (WAN) / Local Area Network (LAN) systems
PCs, notebooks, printers and other PC peripherals
NXP Semiconductors
PRTR5V0U2X
Ultra low capacitance double rail-to-rail ESD protection diode
1.4 Quick reference data
Table 1.
Quick reference data
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
RWM
C
(I/O-GND)
C
sup
[1]
[2]
Parameter
reverse standoff voltage
input/output to ground
capacitance
supply pin to ground
capacitance
Conditions
Min
-
Typ
-
1
16
Max
5.5
1.5
-
Unit
V
pF
pF
f = 1 MHz;
V
(I/O-GND)
= 0 V
f = 1 MHz;
V
CC
= 0 V
[1]
-
-
[2]
Measured from pin 2 and 3 to ground.
Measured from pin 4 to ground.
2. Pinning information
Table 2.
Pin
1
2
3
4
Pinning
Symbol
GND
I/O 1
I/O 2
V
CC
Description
ground
input/output 1
input/output 2
supply voltage
1
2
2
006aaa482
Simplified outline
4
3
Graphic symbol
1
4
3
3. Ordering information
Table 3.
Ordering information
Package
Name
PRTR5V0U2X
-
Description
plastic surface-mounted package; 4 leads
Version
SOT143B
Type number
4. Marking
Table 4.
Marking codes
Marking code
[1]
*R1
Type number
PRTR5V0U2X
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PRTR5V0U2X_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 14 January 2008
2 of 11
NXP Semiconductors
PRTR5V0U2X
Ultra low capacitance double rail-to-rail ESD protection diode
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per device
T
amb
T
stg
Table 6.
Standard
Per diode
IEC 61000-4-2; level 4 (ESD)
> 8 kV (contact)
ambient temperature
storage temperature
ESD standards compliance
Conditions
−40
−55
+85
+125
°C
°C
Parameter
Conditions
Min
Max
Unit
001aaa631
I
PP
100 %
90 %
10 %
t
r
=
0.7 ns to 1 ns
30 ns
60 ns
t
Fig 1. ESD pulse waveform according to IEC 61000-4-2
PRTR5V0U2X_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 14 January 2008
3 of 11
NXP Semiconductors
PRTR5V0U2X
Ultra low capacitance double rail-to-rail ESD protection diode
6. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
RWM
I
R
V
BR
C
(I/O-GND)
C
(I/O-I/O)
C
sup
V
F
[1]
[2]
[3]
[4]
Parameter
reverse standoff voltage
reverse current
breakdown voltage
input/output to ground
capacitance
input/output to input/output
capacitance
supply pin to ground
capacitance
forward voltage
Conditions
Min
-
Typ
-
<1
-
1
0.6
16
0.7
Max
5.5
100
9
1.5
-
-
-
Unit
V
nA
V
pF
pF
pF
V
V
R
= 3 V
f = 1 MHz;
V
(I/O-GND)
= 0 V
f = 1 MHz;
V
(I/O-I/O)
= 0 V
f = 1 MHz;
V
CC
= 0 V
[1]
[2]
[3]
-
6
-
-
-
-
[4]
[2]
Measured from pin 2, 3 and 4 to ground.
Measured from pin 4 to ground.
Measured from pin 2 and 3 to ground.
Measured from pin 2 to pin 3.
2.0
C
(I/O-GND)
(pF)
1.6
006aaa483
1.0
C
(I/O-I/O)
(pF)
0.8
006aaa484
1.2
0.6
0.8
0.4
0.4
0.2
0
0
1
2
3
5
V
(I/O-GND)
(V)
4
0
0
1
2
3
4
5
V
(I/O-I/O)
(V)
f = 1 MHz; T
amb
= 25
°C
f = 1 MHz; T
amb
= 25
°C
Fig 2. Input/output to ground capacitance as a
function of input/output to ground voltage;
typical values
Fig 3. Input/output to input/output capacitance as a
function of input/output to input/output voltage;
typical values
PRTR5V0U2X_2
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 02 — 14 January 2008
4 of 11
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