PTVS5V0Z1USKN
22 October 2015
Transient voltage suppressor in DSN1608-2 for mobile
applications
Product data sheet
1. General description
Unidirectional Transient Voltage Suppressor (TVS) in an ultra small leadless DSN1608-2
(SOD963) package, designed for transient overvoltage protection.
2. Features and benefits
•
•
•
•
•
Rated peak pulse current: I
PPM
= 80 A (8/20 µs pulse)
Rated peak pulse power: P
PPM
= 1200 W (8/20 µs pulse)
Dynamic resistance R
dyn
= 0.06 Ω
Reverse current: I
RM
= 0.025 µA
Very low package height: 0.25 mm
3. Applications
•
•
•
Power supply protection
Industrial application
Power management
4. Quick reference data
Table 1.
Symbol
I
PPM
Quick reference data
Parameter
peak pulse current
Conditions
t
p
= 8/20 µs
t
p
= 10/1000 μs
V
RWM
reverse standoff
voltage
[1]
[2]
[3]
[1][2]
[3][2]
Min
-
-
-
Typ
-
-
-
Max
80
20
5
Unit
A
A
V
T
amb
= 25 °C
In accordance with IEC 61000-4-5 and IEC 61643-321 (8/20 µs current waveform).
Measured from pin 1 to pin 2.
In accordance with IEC 61643-321 (10/1000 µs current waveform).
Nexperia
PTVS5V0Z1USKN
Transient voltage suppressor in DSN1608-2 for mobile applications
5. Pinning information
Table 2.
Pin
1
2
Pinning information
Symbol Description
K
A
cathode
anode
1
2
sym035
Simplified outline
Graphic symbol
1
2
Transparent top view
DSN1608-2 (SOD963)
6. Ordering information
Table 3.
Ordering information
Package
Name
PTVS5V0Z1USKN
DSN1608-2
Description
Version
leadless ultra small package; 2 terminals; body 1.6 x 0.8 SOD963
x 0.25 mm
Type number
7. Marking
Table 4.
Marking codes
Marking code
Z2
Type number
PTVS5V0Z1USKN
PTVS5V0Z1USKN
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
22 October 2015
2 / 13
Nexperia
PTVS5V0Z1USKN
Transient voltage suppressor in DSN1608-2 for mobile applications
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
PPM
Parameter
peak pulse power
Conditions
t
p
= 8/20 µs
t
p
= 10/1000 μs
I
PPM
peak pulse current
t
p
= 8/20 µs
t
p
= 10/1000 μs
T
j
T
amb
T
stg
V
ESD
junction temperature
ambient temperature
storage temperature
[1][2]
[3][2]
[1][2]
[3][2]
Min
-
-
-
-
-
-40
-65
Max
1200
200
80
20
150
125
150
Unit
W
W
A
A
°C
°C
°C
ESD maximum ratings
electrostatic discharge voltage
IEC 61000-4-2; contact discharge
IEC 61000-4-2; air discharge
[1]
[2]
[3]
[4]
120
I
PP
(%)
80
100 % I
PP
; 8 µs
[4][2]
[4][2]
-
-
30
30
kV
kV
In accordance with IEC 61000-4-5 and IEC 61643-321 (8/20 µs current waveform).
Measured from pin 1 to pin 2.
In accordance with IEC 61643-321 (10/1000 µs current waveform).
Device stressed with ten non-repetitive ESD pulses.
001aaa630
001aaa631
I
PP
100 %
90 %
e
- t
50 % I
PP
; 20 µs
40
10 %
0
0
10
20
30
t (µs)
40
t
r
= 0.6 ns to 1 ns
30 ns
60 ns
t
Fig. 1.
8/20 µs pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
Fig. 2.
ESD pulse waveform according to
IEC 61000-4-2
PTVS5V0Z1USKN
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
22 October 2015
3 / 13
Nexperia
PTVS5V0Z1USKN
Transient voltage suppressor in DSN1608-2 for mobile applications
150
I
PP
(%)
100
100 % I
PP
; 10 µs
006aab319
50
50 % I
PP
; 1000 µs
0
0
1.0
2.0
3.0
t
p
(ms)
4.0
Fig. 3.
10/1000 µs pulse waveform according to IEC 61643-321
9. Characteristics
Table 6.
Symbol
V
RWM
I
RM
C
d
V
BR
V
CL
Characteristics
Parameter
reverse standoff
voltage
reverse leakage
current
diode capacitance
breakdown voltage
clamping voltage
Conditions
T
amb
= 25 °C
V
R
= 5 V; T
amb
= 25 °C
f = 1 MHz; V
R
= 0 V; T
amb
= 25 °C
I
R
= 10 mA; T
amb
= 25 °C
I
PPM
= 80 A; T
amb
= 25 °C; t
p
= 8/20 µs
I
PPM
= 20 A; T
amb
= 25 °C;
t
p
= 10/1000 μs
R
dyn
dynamic resistance
[1]
[2]
[3]
[4]
[1]
[2][1]
[3][1]
[1]
Min
-
-
-
6.4
-
-
-
Typ
-
0.025
1200
7
-
-
0.06
Max
5
1
-
7.8
18
12
-
Unit
V
µA
pF
V
V
V
Ω
I
R
= 10 A; T
amb
= 25 °C
[4][1]
Measured from pin 1 to 2.
In accordance with IEC 61000-4-5 and IEC 61643-321 (8/20 µs current waveform).
In accordance with IEC 61643-321 (10/1000 µs current waveform).
Non-repetitive current pulse, Transmission Line Pulse (TLP) t
p
= 100 ns; square pulse; ANSI / ESD
STM5.5.1-2008.
PTVS5V0Z1USKN
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
22 October 2015
4 / 13
Nexperia
PTVS5V0Z1USKN
Transient voltage suppressor in DSN1608-2 for mobile applications
I
10
4
P
PPM
(W)
10
3
aaa-018460
- V
CL
- V
BR
- V
RWM
V
- I
RM
- I
R
+
10
2
-
P-N
10
- I
PP
- I
PPM
006aab324
10
10
2
10
3
t
p
(µs)
10
4
Fig. 4.
V-I characteristics for a unidirectional TVS
protection diode
1.2
006aab321
Fig. 5.
Rated peak pulse power as a funtion of square
pulse duration; typical values
10
3
aaa-018461
P
PPM
P
PPM(25°C)
0.8
I
RM
(nA)
10
2
0.4
10
0
0
50
100
150
T
j
(°C)
200
1
-100
0
100
T
amb
(°C)
200
Fig. 6.
Relative variation of rated peak pulse power
as a function of junction temperature; typical
values
Fig. 7.
Relative variation of reverse leakage current
as a function of junction temperature; typical
values
PTVS5V0Z1USKN
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
22 October 2015
5 / 13
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