SMBJ12AON
600 Watt Peak Power Zener
Transient Voltage
Suppressor
Unidirectional*
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The SMBJ12AON is designed to protect voltage sensitive
components from high voltage, high energy transients. This device has
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMBJ12AON is ideally suited
for use in computer hard disk drives, communication systems,
automotive, numerical controls, process controls, medical equipment,
business machines, power supplies, and many other
industrial/consumer applications.
Specification Features:
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSOR
600 WATT PEAK POWER
•
Working Peak Reverse Voltage Range - 12 V
•
Peak Power - 600 Watts @ 1 ms at Maximum Clamp Voltage @
•
•
•
•
•
•
Peak Pulse Current
ESD Rating of Class 3 (>16 KV) per Human Body Model
ESD Rating IEC 61000 -4.2 Level 4
Low Leakage < 5
mA
at 12 V
UL 497B for Isolated Loop Circuit Protection
Response Time is Typically < 1 ns
Pb-Free Package is Available
Cathode
Anode
SMB
CASE 403A
PLASTIC
Mechanical Characteristics:
CASE:
Void‐free, transfer‐molded, thermosetting plastic
FINISH:
All external surfaces are corrosion resistant and leads are
MARKING DIAGRAM
readily Solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
LEADS:
Modified L-Bend providing more contact area to bond pads
POLARITY:
Cathode indicated by polarity band
MOUNTING POSITION:
Any
ABSOLUTE MAXIMUM RATINGS
Please See the Table on the Following Page
AYWW
LEM
G
G
A
Y
WW
LEM
G
= Assembly Location
= Year
= Work Week
= Specific Device Code
= Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
SMBJ12AONT3
SMBJ12AONT3G
Package
SMB
SMB
(Pb-Free)
Shipping
†
2500/Tape & Reel
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2007
1
May, 2007 - Rev. 1
Publication Order Number:
SMBJ12AON/D
SMBJ12AON
ABSOLUTE MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ T
L
= 25°C, Pulse Width = 1 ms
DC Power Dissipation @ T
L
= 75°C
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction to Lead
DC Power Dissipation (Note 3) @ T
A
= 25°C
Derate Above 25°C
Thermal Resistance from Junction to Ambient
Operating and Storage Temperature Range
Symbol
P
PK
P
D
R
qJL
P
D
R
qJA
T
J
, T
stg
Value
600
3.0
40
25
0.55
4.4
226
-65 to +150
Unit
W
W
mW/°C
°C/W
W
mW/°C
°C/W
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000
ms,
non-repetitive at maximum I
PPM
and V
CM
, see electrical characteristics.
2. 1″ square copper pad, FR-4 board
3. FR-4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless
otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 4) = 30 A)
Symbol
I
PP
V
C
V
RWM
I
R
V
BR
I
T
I
F
V
F
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Forward Current
Forward Voltage @ I
F
V
C
V
BR
V
RWM
I
F
I
I
R
V
F
I
T
V
I
PP
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,
non-repetitive duty cycle.
Uni-Directional TVS
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
Zener Voltage (Note 5)
Reverse Leakage Current
Clamping Voltage
Conditions
IT = 1 mA
V
RWM
= 12 V
I
PPM
= 30.2 A
(Per Figure 1, Note 6)
Symbol
V
Z
I
R
V
CM
Min
13.2
Typ
13.75
Max
14.3
5.0
19.9
Unit
V
mA
V
5. VZ measured at pulse test IT at an ambient temperature of 25°C.
6. Absolute Maximum Peak Current, I
PPM
.
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2
SMBJ12AON
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ T = 25
°
C
A
PULSE WIDTH (t
P
) IS DEFINED AS
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF I
PP
.
160
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
t
r
≤
10
ms
100
VALUE (%)
PEAK VALUE - I
PP
HALF VALUE -
50
t
P
0
I
PP
2
0
1
2
t, TIME (ms)
3
4
T
A
, AMBIENT TEMPERATURE (°C)
Figure 1. 10
×
1000
ms
Pulse Waveform
Figure 2. Pulse Derating Curve
TYPICAL PROTECTION CIRCUIT
Z
in
V
in
LOAD
V
L
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SMBJ12AON
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitive
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 3.
The inductive effects in the device are due to actual
turn‐on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 4. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. The SMB series have
a very good response time, typically < 1 ns and negligible
inductance. However, external inductive effects could
produce unacceptable overshoot. Proper circuit layout,
minimum lead lengths and placing the suppressor device as
close as possible to the equipment or components to be
protected will minimize this overshoot.
Some input impedance represented by Z
in
is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
If the duty cycle increases, the peak power must be
reduced as indicated by the curves of Figure 5. Average
power must be derated as the lead or ambient temperature
rises above 25°C. The average power derating curve
normally given on data sheets may be normalized and used
for this purpose.
V
V
in
(TRANSIENT)
V
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
V
in
(TRANSIENT)
V
L
V
L
V
in
t
d
t
D
= TIME DELAY DUE TO CAPACITIVE EFFECT
t
t
Figure 3.
Figure 4.
1
0.7
0.5
DERATING FACTOR
0.3
0.2
0.1
0.07
0.05
0.03
0.02
10
ms
0.01
0.1 0.2
0.5
1
2
5
10
D, DUTY CYCLE (%)
20
50 100
100
ms
PULSE WIDTH
10 ms
1 ms
Figure 5. Typical Derating Factor for Duty Cycle
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4
SMBJ12AON
UL RECOGNITION
The entire series has
Underwriters Laboratory
Recognition
for the classification of protectors (QVGV2)
under the UL standard for safety 497B and File #116110.
Many competitors only have one or two devices recognized
or have recognition in a non‐protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests
including Strike Voltage Breakdown test, Endurance
Conditioning,
Temperature
test,
Dielectric
Voltage‐Withstand test, Discharge test and several more.
Whereas, some competitors have only passed a
flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.
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5
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