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SMAJ64Ae3/TR13

产品描述ESD Suppressors / TVS Diodes Transient Voltage Suppressor
产品类别分立半导体    二极管   
文件大小481KB,共6页
制造商Microsemi
官网地址https://www.microsemi.com
标准
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SMAJ64Ae3/TR13概述

ESD Suppressors / TVS Diodes Transient Voltage Suppressor

SMAJ64Ae3/TR13规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Microsemi
零件包装代码DO-214AC
包装说明R-PDSO-C2
针数2
Reach Compliance Codecompliant
ECCN代码EAR99
最大击穿电压78.6 V
最小击穿电压71.1 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-214AC
JESD-30 代码R-PDSO-C2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值反向功率耗散400 W
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性UNIDIRECTIONAL
最大功率耗散1 W
认证状态Not Qualified
最大重复峰值反向电压64 V
表面贴装YES
技术AVALANCHE
端子面层PURE MATTE TIN
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间30

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SMAJ5.0e3 to SMAJ440CAe3
400W Transient Voltage Suppressor (TVS) protection device
Main product characteristics
V
WM
V
BR(min)
- V
BR(max)
I
PP
V
CL(MAX)
P
PP
5.0V – 440V
6.40V – 543V
41.7A – 0.6A
9.6V – 713V
400W
RoHS
COMPLIANT
DO-214AC (SMA)
Description and applications
This device has the ability to clamp dangerous high voltage, short term transients such as produced by directed or
radiated electrostatic discharge phenomena before entering sensitive component regions of a circuit design. Response
time of clamping action is virtually instantaneous. As a result, they may also be used effectively for protection from
ESD or EFT per IEC61000-4-2 and IEC61000-4-4 or for inductive switching environments and induced RF. They can
also be used for protecting other sensitive components from secondary lightning effects per IEC61000-4-5 and class
levels defined herein. Microsemi also offers numerous other TVS products to meet higher and lower power demands
and special applications.
RoHS compliant (2002/95/EC), MSL level 1 (J-STD-020)
Qualified to automotive grade – AEC Q101
Bi-directional devices are denoted by the suffixes C or CA, electrical characteristics apply in both directions.
Maximum ratings and characteristics
(1)
Symbol
P
PPM
I
PPM
P
M(AV)
I
FSM
V
F
R
ΘJL
R
ΘJA
T
STG
T
J
(1)
(2)
(3)
(4)
(5)
Parameter
Peak power dissipation with a 10/1000µs waveform
(2)(3)
(fig.1)
Peak pulse current with a 10/1000µs waveform
(2)
(fig. 3)
Steady state power dissipation at T
L
= 75ºC, lead lengths 0.375”
(9.5mm)
(3)
Non repetitive peak forward surge current
(8.3ms single half sine wave) unidirectional only
(4)
Maximum instantaneous forward voltage at 25A for unidirectional
only
(5)
Typical thermal resistance junction to lead
Typical thermal resistance junction to ambient
Storage temperature
Junction temperature
Value
400
See next table
1.0
40
3.5 / 5.0
30
120
-55 to +150
-55 to +150
Unit
W
A
W
A
V
ºC/W
ºC/W
ºC
ºC
All ratings at 25ºC unless specified otherwise
Non-repetitive current pulse, per Fig. 3 and derated above T
A
= 25ºC per Fig. 2. rating is 300W above 78V.
Mounted on copper pad area of 0.2” x 0.2” (5.0mm x 5.0mm)
Mounted on minimum recommended pad layout
V
F
=3.5V for devices of V
BR
< 220V and V
F
=5.0V maximum for devices of V
BR
> 220V
Copyright
©
2010
Mar Rev C
www.Microsemi.com
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