SM4TY
Automotive 400 W Transil™
Datasheet
-
production data
Complies with the following standards
A
•
ISO 10605, C = 150 pF, R = 330
Ω:
– 30 kV (air discharge)
– 30 kV (contact discharge)
•
ISO 10605, C = 330 pF, R = 330
Ω:
– 30 kV (air discharge)
– 30 kV (contact discharge)
•
ISO 7637-2
(a)
– pulse 1: V
S
= -100 V
– pulse 2a: V
S
= +50 V
– pulse 3a: V
S
= -150 V
– pulse 3b: V
S
= +100 V
K
Unidirectional
Bidirectional
SMA
(JEDEC DO-214AC)
Features
•
Peak pulse power:
– 400 W (10/1000 µs)
– 2.3 kW (8/20 µs)
•
Stand-off voltage range: from 5 V to 70 V
•
Unidirectional and bidirectional types
•
Low leakage current:
– 0.2 µA at 25 °C
– 1 µA at 85 °C
•
Operating T
j max
: 150 °C
•
High power capability at T
jmax
:
– 270 W (10/1000 µs)
•
JEDEC registered package outline
•
Resin meets UL 94, V0
•
AEC-Q101 qualified
Description
The SM4TY Transil series has been designed to
protect sensitive automotive circuits against
surges defined in ISO 7637-2 and against
electrostatic discharges according to ISO 10605.
The planar technology makes it compatible with
high-end circuits where low leakage current and
high junction temperature are required to provide
reliability and stability over time. SM4TY devices
are packaged in SMA (SMA footprint in
accordance with IPC 7531 standard).
TM:
Transil is a trademark of STMicroelectronics
a. Not applicable to parts with stand-off voltage lower
than the average battery voltage (13.5 V)
October 2015
This is information on a product in full production.
DocID17862 Rev 4
1/12
www.st.com
Characteristics
SM4TY
1
Characteristics
Table 1. Absolute maximum ratings (T
amb
= 25
°C
)
Symbol
Parameter
ISO 10605 (C = 150 pF, R = 330
Ω)
Contact discharge
Air discharge
Value
Unit
30
30
kV
30
30
400
-65 to + 150
-55 to + 150
260
W
°C
°C
°C
V
PP
Peak pulse voltage
ISO 10605, C = 330 pF, R = 330
Ω:
Contact discharge
Air discharge
T
j initial
= T
amb
PPP
Peak pulse power dissipation
(1)
Storage temperature range
Operating junction temperature range
Maximum lead temperature for soldering during 10 s.
T
stg
T
j
T
L
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Figure 1. Electrical characteristics - definitions
I
I
I
PP
Symbol
V
RM
V
BR
V
CL
I
RM
I
PP
α
T
V
F
R
D
Parameter
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current @ V
RM
Peak pulse current
Voltage temperature coefficient
Forward voltage drop
Dynamic resistance
Unidirectional
I
F
V
CL
V
BR
V
RM
I
RM
I
R
V
F
V
V
CL
V
BR
V
RM
I
R
I
RM
I
RM
I
R
V
V
RM
V
BR
V
CL
I
PP
I
PP
Bidirectional
Figure 2. Pulse definition for electrical characteristics
%I
PP
100
50
Pulse waveform
tr = rise time (µs)
tp = pulse duration time (µs)
0
tr
tp
t
2/12
DocID17862 Rev 4
SM4TY
Characteristics
Table 2. Electrical characteristics, typical values if not otherwise stated (T
amb
= 25 °C)
I
RM
max @ V
RM
Order code
25 °C 85 °C
µA
SM4T6V7AY/CAY
SM4T7V6AY/CAY
SM4T10AY/CAY
SM4T12AY/CAY
SM4T14AY/CAY
SM4T15AY/CAY
SM4T18AY/CAY
SM4T21AY/CAY
SM4T23AY/CAY
SM4T26AY/CAY
SM4T28AY/CAY
SM4T30AY/CAY
SM4T33AY/CAY
SM4T35AY/CAY
SM4T39AY/CAY
SM4T47AY/CAY
SM4T50AY/CAY
SM4T56AY/CAY
SM4T68AY/CAY
SM4T82AY/CAY
20
20
20
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
50
50
50
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
5
6.5
8.5
10
12
13
15
18
20
22
24
26
28
30
33
40
43
48
58
70
V
BR
@ I
R (1)
min. typ. max.
V
6.4
7.2
9.4
6.74
7.58
9.9
7.1
8.0
10.4
12.3
mA
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
R
D
V
CL
@ I
PP
V @ I
PP
10/1000
CL
10/1000 µs
8/20 µs
µs
max.
V
(3)
9.2
A
(4)
43.5
Ω
0.049
0.091
0.145
0.201
0.259
0.298
0.361
0.514
0.637
0.760
0.912
1.07
1.26
1.39
1.70
2.49
2.91
3.56
5.21
7.72
max.
V
(3)
A
(4)
Ω
R
D
8/20
µs
αT
(2)
max
10-4/
°C
5.7
6.1
7.3
7.8
8.3
8.4
8.8
9.2
9.4
9.6
9.6
9.7
9.8
9.9
10
10.1
10.2
10.3
10.4
10.5
13.4 174 0.036
14.5 160 0.041
19.5 124 0.073
21.7 106 0.089
25.3
27.2
32.5
39.3
42.8
48.3
50
53.5
59
64.3
69.7
84
91
100
121
146
91
85
71
59
54
48
46
43
39
36
33
27
25
23
19
16
0.116
0.132
0.197
0.291
0.338
0.444
0.446
0.502
0.632
0.762
0.884
1.30
1.53
1.79
2.62
3.75
11.2 35.7
14.4 27.7
17.0 23.5
19.9 20.1
21.5 18.6
24.4 16.4
29.2 13.7
32.4 12.3
35.5 11.2
38.9 10.3
42.1
45.4
48.4
53.3
64.5
69.4
77.4
93.6
113
9.5
8.8
8.3
7.5
6.2
5.7
5.2
4.3
3.5
11.1 11.7
13.3 14.0 14.7
14.4 15.2 16.0
16.7 17.6 18.5
20.0 21.1 22.2
22.2 23.4 24.6
24.4 25.7 27.0
26.7 28.1 29.5
28.9 30.4 31.9
31.1 32.7 34.3
33.3 35.1 36.9
36.7 38.6 40.5
44.4 46.7 49.0
47.8 50.3 52.8
53.3 56.1 58.9
64.4 67.8 71.2
77.8 81.9 86.0
1. Pulse test: t
p
< 50 ms
2. To calculate maximum clamping voltage at other surge level, use the following formula: V
CL
max = V
CL
- R
D
x (I
PP
- I
PPappli
)
where I
PPappli
is the surge current in the application
3. To calculate V
BR
or V
CL
versus junction temperature, use the following formulas:
V
BR
@ T
J
= V
BR
@ 25 °C x (1 +
αT
x (T
J
- 25))
V
CL
@ T
J
= V
CL
@ 25 °C x (1 +
αT
x (T
J
- 25))
4. Surge capability given for both directions for unidirectional and bidirectional types.
DocID17862 Rev 4
3/12
12
Characteristics
SM4TY
Figure 3. Peak pulse power dissipation versus Figure 4. Peak pulse power versus exponential
initial junction temperature
pulse duration
(T
j
initial = 25 °C)
500
P
PP
(W)
Pulse = 10/1000 µs
10.0
P
PP
(kW)
400
300
1.0
200
100
0
0
25
50
75
100
125
150
T
j
(°C)
175
0.1
1.0E-03
tp(ms)
1.0E-02
1.0E-01
1.0E+00
1.0E+01
Figure 5. Clamping voltage versus peak pulse
current (exponential waveform, maximum
values)
1000.0
Figure 6. Junction capacitance versus reverse
applied voltage for unidirectional types (typical
values)
10000
I
PP
(A)
T
j
initial = 25 °C
C(pF)
F = 1 Mhz
V
OSC
= 30 mV
RMS
T
j
= 25 °C
100.0
1000
8/20 µs
10.0
10/1000 µs
SM4T82AY/CAY
SM4T30AY/CAY
100
SM4T30AY
SM4T6V7AY/CAY
SM4T6V7AY
1.0
SM4T82AY
0.1
1
V
CL
(V)
100
1000
10
1
10
100
V
R
(V)
1000
10
Figure 7. Junction capacitance versus reverse
applied voltage for bidirectional types (typical
values)
10000
Figure 8. Relative variation of thermal
impedance, junction to ambient, versus pulse
duration
1.00
C(pF)
F = 1 Mhz
V
OSC
= 30 mV
RMS
T
j
= 25 °C
Z
th(j-a)
/R
th(j-a)
Recommended pad layout
Printed circuit board FR4,
copper thickness = 35 µm
1000
SM4T6V7CAY
0.10
SM4T30CAY
100
SM4T82CAY
10
1
10
100
V
R
(V)
1000
tp(s)
0.01
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
4/12
DocID17862 Rev 4
SM4TY
Characteristics
Figure 9. Thermal resistance junction to
ambient versus copper surface under each lead
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
R
th(j-a)
(°C/W)
Figure 10. Leakage current versus junction
temperature (typical values)
1.E+03
I
R
(nA)
Printed circuit board FR4,
copper thickness = 35 µm
1.E+02
V
R
= V
RM
V
RM
< 10 V
1.E+01
1.E+00
V
R
= V
RM
V
RM
≥
10 V
S
Cu
(cm²)
4.5
5.0
1.E-01
25
50
75
100
125
T
j
(°C)
150
Figure 11. Peak forward voltage drop versus peak forward current (typical values)
1.0E+02
I
FM
(A)
1.0E+01
T
j
= 125 °C
1.0E+00
T
j
= 25 °C
1.0E-01
1.0E-02
0.0
0.5
1.0
1.5
2.0
2.5
V
FM
(V)
3.0
3.5
DocID17862 Rev 4
5/12
12
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
