电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

5.0SMDJ51CA-T7

产品描述ESD Suppressors / TVS Diodes 51V 5KW 5% BI DO-214AB
产品类别分立半导体    二极管   
文件大小1MB,共6页
制造商Littelfuse
官网地址http://www.littelfuse.com
标准
下载文档 详细参数 全文预览

5.0SMDJ51CA-T7概述

ESD Suppressors / TVS Diodes 51V 5KW 5% BI DO-214AB

5.0SMDJ51CA-T7规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Littelfuse
零件包装代码DO-214AB
包装说明R-PDSO-J2
针数2
Reach Compliance Codenot_compliant
ECCN代码EAR99
其他特性EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
最大击穿电压62.7 V
最小击穿电压56.7 V
击穿电压标称值59.7 V
最大钳位电压82.4 V
配置SINGLE
二极管元件材料SILICON
二极管类型TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码DO-214AB
JESD-30 代码R-PDSO-J2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值反向功率耗散5000 W
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-65 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性BIDIRECTIONAL
最大功率耗散6.5 W
参考标准IEC-61000-4-2; IEC-61000-4-4
最大重复峰值反向电压51 V
表面贴装YES
技术AVALANCHE
端子面层Matte Tin (Sn)
端子形式J BEND
端子位置DUAL
处于峰值回流温度下的最长时间40

文档预览

下载PDF文档
Transient Voltage Suppression Diodes
Surface Mount – 5000W > 5.0SMDJ series
5.0SMDJ Series
Uni-directional
Bi-directional
Description
RoHS
Pb
e3
The 5.0SMDJ series is designed specifically to protect
sensitive electronic equipment from voltage transients
induced by lightning and other transient voltage events.
Features
• 5000W peak pulse power
capability at 10/1000μs
waveform, repetition rate
(duty cycles):0.01%
• For surface mounted
applications to optimize
board space
• Low profile package
• Typical failure mode is
short from over-specified
voltage or current
• Whisker test is conducted
based on JEDEC
JESD201A per its table 4a
and 4c
• IEC-61000-4-2 ESD
30kV(Air), 30kV (Contact)
• ESD protection of data
lines in accordance with
IEC 61000-4-2
• EFT protection of data
lines in accordance with
IEC 61000-4-4
• Built-in strain relief
• Glass passivated chip
junction
• Fast response time:
typically less than 1.0ps
from 0V to BV min
Applications
TVS devices are ideal for the protection of I/O Interfaces,
V
CC
bus and other vulnerable circuits used in Telecom,
Computer, Industrial and Consumer electronic
applications.
Additional Infomarion
• Excellent clamping
capability
• Low incremental surge
resistance
• Typical I
R
less than 5μA
when V
BR
min>22V
• High temperature
to reflow soldering
guaranteed: 260°C/40sec
• V
BR
@ T
J
= V
BR
@25°C
x (1+
α
T x (T
J
- 25))
(
α
T:Temperature
Coefficient, typical value
is 0.1%)
• Plastic package is
flammability rated V-0 per
Underwriters Laboratories
• Meet MSL level1, per
J-STD-020, LF maximun
peak of 260
°
C
• Matte tin lead–free plated
• Halogen free and RoHS
compliant
• Pb-free E3 means 2nd
level interconnect is
Pb-free and the terminal
finish material is tin(Sn)
(IPC/JEDEC J-STD-
609A.01)
Agency Approvals
AGENCY
AGENCY FILE NUMBER
E230531
Maximum Ratings and Thermal Characteristics
(T
A
=25
O
C unless otherwise noted)
Parameter
Peak Pulse Power Dissipation at
T
L
=25
O
C by 10/1000µs Waveform
(Fig.2)(Note 1), (Note 2)
Power Dissipation on Infinite Heat
Sink at T
L
=50
O
C
Peak Forward Surge Current, 8.3ms
Single Half Sine Wave (Note 3)
Maximum Instantaneous Forward
Voltage at 100A for Unidirectional
Only
Operating Temperature Range
Storage Temperature Range
Typical Thermal Resistance Junction
to Lead
Typical Thermal Resistance Junction
to Ambient
Symbol
P
PPM
P
D
I
FSM
V
F
T
J
T
STG
R
θJL
R
θJA
Value
5000
6.5
300
5.0
-65 to 150
-65 to 175
15
75
Unit
W
W
A
V
°C
°C
°C/W
°C/W
Notes:
1. Non-repetitive current pulse , per Fig. 4 and derated above T
J
(initial) =25
O
C per Fig. 3.
2. Mounted on copper pad area of 0.31x0.31” (8.0 x 8.0mm) to each terminal.
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional
device only,duty cycle=4 per minute maximum.
Functional Diagram
Bi-directional
Datasheet
Anode
Resources
Samples
Cathode
Uni-directional
© 2015 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 11/20/15
你知道怎么选择一个合适的摄像头吗?
此内容由EEWORLD论坛网友UIOT深圳分公司原创,如需转载或用于商业用途需征得作者同意并注明出处 对于安防这个话题,确实比较重要,不管是白天无人的家中还是无人的公司或店铺。监控摄 ......
UIOT深圳分公司 DIY/开源硬件专区
EEWORLD大学堂----ADI 振动信号的精密采集信号链设计考量
ADI 振动信号的精密采集信号链设计考量 :https://training.eeworld.com.cn/course/5715...
hi5 模拟电子
请问s3c2410中addr0,addr1,addr2,addr3,addr4等地址线怎么操作
在S3C2410.h中找不到对应的寄存器定义啊?请问怎么进行读写操作?谢谢!...
asdf6716 嵌入式系统
3842非隔离请教
165650 用3842做非隔离的DCDC,输入电压DC20V-75V,输出DC12V,2A请问一下,这种方案是否可行,图中红圈的元件选择什么型号比较合适。或都有什么别的方案也可以提一下。主要是要控制成本。谢谢 ......
dzq1980 电源技术
RAM、ROM、SRAM、DRAM、SSRAM、SDRAM、FLASH、EEPROM
RAM(Random Access Memory) 随机存储器。存储单元的内容可按需随意取出或存入,且存取的速度与存储单元的位置无关的存储器。这种存储器在断电时将丢失其存储内容,故主要用于存储短时间使用的程 ......
Jacktang 微控制器 MCU
【为2011大赛准备】集成运算放大器分析与设计
本帖最后由 paulhyde 于 2014-9-15 03:52 编辑 第一次发帖,希望大家能喜欢~~~:loveliness: ...
jxmykl 电子竞赛

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1134  678  811  2056  777  23  14  17  42  16 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved