EFT protection for high speed data ports meeting IEC 61000-4-2
(ESD) and IEC 61000-4-4 (EFT) requirements. The Transient
Voltage Suppressor array, protecting up to six data lines, offers a
Working Peak Voltage of 5.0 V.
The DFN-10 package is easy to handle with standard pick and
place equipment and their flat configuration minimizes roll away.
2
1
4
5
6
7
10
9
Absolute Maximum Ratings, T
A
= 25 °C (Unless Otherwise Noted)
Parameter
Peak Pulse Current (t
p
= 8/20 μS)
Peak Pulse Current (t
p
= 8/20 μS)
Operating Supply Votage (V
dd
- Gnd)
DC Voltage on any I/O Pad
Storage Temperature
Operating Temperature
ESD Protection per IEC 61000-4-2
Contact Discharge
Air Discharge
EFT Protection per IEC 61000-4-4 @ 5/50 ns
Symbol
I
pp
P
pk
V
DC
V
IO
T
STG
T
OPR
Rating
3.5
40
6
(Gnd -0.5) to (V
dd
+0.5)
-55 to +150
-40 to +85
±8
±15
40
Unit
A
W
V
V
ºC
ºC
kV
kV
A
Electrical Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter
Working Peak Voltage
1
Breakdown Voltage @ 1 mA
1
Forward Voltage @ 15 mA
2
Leakage Current @ V
WM 1
Leakage Current @ V
WM 3
Channel Capacitance
3
@ 2.5 V, 1 MHz
Channel to Channel Capacitance
4
@ 2.5 V, 1 MHz
ESD Dynamic Turn-on Resistance
5
ESD Dynamic Turn-on Resistance
6
Symbol
V
WM
V
BR
V
F
I
L
I
IO
C
IO
C
CROSS
R
dynamic_I/O
R
dynamic_VDD
0.25
0.05
0.35
0.2
6.0
0.8
1.2
2.5
1
0.35
0.07
Min.
Typ.
Max.
5.0
Unit
V
V
V
μA
μA
pF
pF
Ω
Ω
Note 1: Pin 2 to Pin 9
Note 2: Pin 9 to Pin 2.
Note 3: Pin 1, 4, 5, 6, 7 or 10 to Ground.
Note 4: Between I/O 1, 4, 5, 6, 7 or 10.
Note 5: Any I/O Pin to Ground.
Note 6: V
DD
Pin to Ground.
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
CDDFN10-0506N
SMD Trimming Potentiometer
3312 - 2 mm
- TVS/Steering Diode Array
Performance Curves
Insertion Loss S21
0
-3
VDD = 5 V
VDD = Floated
Crosstalk Between I/Os
0
-10
VDD = 5 V
VDD = Floated
Insertion Loss (dB)
-6
-9
-12
-15
-18
-21
-24
-27
-30
1e+8
Analog Cross Talk (dB)
4.1 GHz: -3 dB
1e+9
-20
-30
-40
-50
-60
1e+8
1e+9
Frequency (Hz)
Frequency (Hz)
Channel Capacitance versus Voltage
0.50
f = 1 MHz, T = 25 °C
0.45
Channel to Channel Capacitance versus Voltage
0.10
0.09
0.08
f = 1 MHz, T = 25 °C
Input Capacitance (pF)
Input Capacitance (pF)
0.40
0.35
0.30
0.25
0.20
0.0
0.07
0.06
0.05
0.04
0.03
0.02
0.01
VDD = Floated
VDD = Floated
VDD = 5 V
VDD = 5 V
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.00
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Input Voltage (V)
Input Voltage (V)
Typical V/I Characteristic
18
16
V_pulse
VDD to GND
Pulse from a
transmission line
100 ns
+
TLP_V
-
DUT
TLP_I
14
12
Current (A)
10
8
6
4
2
0
0
1
2
3
I/O to GND
4
5
6
7
8
9
10 11
12
13 14
Voltage (V)
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in
different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
CDDFN10-0506N - TVS/Steering Diode Array
Reference Application
Bourns
®
Model CDDFN10-0506N is designed to protect high speed data ports from ESD transients. For high speed ports above
5 Gb/s such as USB 3.0, differential signalling is used where the need to keep impedance constant is a critical requirement. The use
of a DFN-10 package using a “feed through” layout provides a minimum impedance change on the high speed data line while the
ultra-low capacitance performance of the device limits the signal loss degradation of each channel.
To
I/O-port
Connector
VDD rail
1
10
2
VDD
3
N.C.
4
data line
data line
To
Protected
IC
* Optional
0.1
μF
Chip Cap.
9
GND
8
N.C.
7
data line
data line
data line
To
I/O-port
Connector
5
6
To
Protected
IC
data line
CDDFN10-0506N Layout on USB 3.0 Port
CDDFN10-0506N Using 5 GHz Eye Diagram
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
CDDFN10-0506N - TVS/Steering Diode Array
Product Dimensions
This is a molded DFN10 package with lead free 100 % Matte Sn on
the lead frame. It has a flammability rating of UL 94V-0.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
CDDFN10-0506N - TVS/Steering Diode Array
3312 - 2 mm SMD Trimming Potentiometer
Packaging Information
The product will be dispensed in tape and reel format (see diagram below).
P
0
P
1
d
E
Index Hole
T
120 °
F
W
B
D2
D1 D
P
Trailer
A
Device
C
Leader
End
.......
.......
10 pitches (min.)
.......
.......
.......
.......
.......
.......
10 pitches (min.)
W1
Start
DIMENSIONS:
MM
(INCHES)
Direction of Feed
Devices are packed in accordance with EIA standard
RS-481-A.
Item
Carrier Width
Carrier Length
Carrier Depth
Sprocket Hole
Reel Outside Diameter
Reel Inner Diameter
Feed Hole Diameter
Sprocket Hole Position
Punch Hole Position
Punch Hole Pitch
Sprocket Hole Pitch
Embossment Center
Overall Tape Thickness
Tape Width
Reel Width
Quantity per Reel
Symbol
A
B
C
d
D
D1
D2
E
F
P
P0
P1
T
W
W1
--
DFN-10
2.21 ± 0.05
(0.087 ± 0.002)
4.22 +0.05/-0.04
(0.166 +0.002/-0.002)
0.81 ± 0.05
(0.032 ± 0.002)
1.50 +0.1/-0
(0.059 +0.004/-0)
180 ± 3
(7.087 ± .118)
50.0
MIN.
(1.969)
13.0 +0.5/-0.2
(0.512 +0.020/-0.008)
1.75 ± 0.10
(0.069 ± 0.004)
5.50 ± 0.05
(0.217 ± 0.002)
4.00 ± 0.10
(0.157 ± 0.004)
4.00 ± 0.10
(0.157 ± 0.004)
2.00 ± 0.05
(0.079 ± 0.002)
0.6
MAX.
(0.024)
12.3
MAX.
(0.484)
18.4
MAX.
(0.724)
3000
REV. 09/15
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in
different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
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