74AC10
TRIPLE 3-INPUT NAND GATE
s
s
s
s
s
s
s
s
s
HIGH SPEED: t
PD
= 4ns (TYP.) at V
CC
= 5V
LOW POWER DISSIPATION:
I
CC
= 2µA(MAX.) at T
A
=25°C
HIGH NOISE IMMUNITY:
V
NIH
= V
NIL
= 28 % V
CC
(MIN.)
50Ω TRANSMISSION LINE DRIVING
CAPABILITY
SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
| = I
OL
= 24mA (MIN)
BALANCED PROPAGATION DELAYS:
t
PLH
≅
t
PHL
OPERATING VOLTAGE RANGE:
V
CC
(OPR) = 2V to 6V
PIN AND FUNCTION COMPATIBLE WITH
74 SERIES 10
IMPROVED LATCH-UP IMMUNITY
DIP
SOP
TSSOP
ORDER CODES
PACKAGE
DIP
SOP
TSSOP
TUBE
74AC10B
74AC10M
DESCRIPTION
The 74AC10 is an advanced high-speed CMOS
TRIPLE 3-INPUT NAND GATE fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS tecnology.
PIN CONNECTION AND IEC LOGIC SYMBOLS
O
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
The internal circuit is composed of 3 stages
including buffer output, which enables high noise
immunity and stable output.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them 2KV ESD immunity and transient excess
voltage.
et
l
o
P
e
od
r
s)
t(
uc
T&R
74AC10MTR
74AC10TTR
April 2001
1/8
74AC10
INPUT AND OUTPUT EQUIVALENT CIRCUIT
PIN DESCRIPTION
PIN No
1, 3, 9
2, 4, 10
13, 5, 11
12, 6, 8
7
14
SYMBOL
1A to 3A
1B to 3B
1C to 3C
1Y to 3Y
GND
V
CC
NAME AND FUNCTION
Data Inputs
Data Inputs
Data Inputs
Data Outputs
Ground (0V)
Positive Supply Voltage
TRUTH TABLE
A
L
X
X
H
X= Don’t care
B
X
L
X
H
C
X
X
L
H
Y
H
H
H
L
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CC
V
I
V
O
I
IK
I
OK
I
O
T
stg
T
L
Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Current
Storage Temperature
Lead Temperature (10 sec)
Parameter
I
CC
or I
GND
DC V
CC
or Ground Current
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
I
O
so
b
V
O
T
op
dt/dv
te
le
Supply Voltage
Input Voltage
Output Voltage
r
P
uc
od
s)
t(
b
-O
so
te
le
r
P
-0.5 to +7
od
Value
±
20
±
20
±
50
±
200
s)
t(
uc
Unit
V
V
V
mA
mA
mA
mA
°C
°C
-0.5 to V
CC
+ 0.5
-0.5 to V
CC
+ 0.5
-65 to +150
300
Parameter
Value
2 to 6
0 to V
CC
0 to V
CC
-55 to 125
8
Unit
V
V
V
°C
ns/V
Operating Temperature
Input Rise and Fall Time V
CC
= 3.0, 4.5 or 5.5V (note 1)
1) V
IN
from 30% to 70% of V
CC
2/8
74AC10
DC SPECIFICATIONS
Test Condition
Symbol
Parameter
V
CC
(V)
3.0
4.5
5.5
3.0
4.5
5.5
3.0
4.5
5.5
3.0
4.5
5.5
V
OL
Low Level Output
Voltage
3.0
4.5
5.5
3.0
4.5
5.5
I
I
I
CC
I
OLD
I
OHD
Input Leakage
Current
Quiescent Supply
Current
Dynamic Output
Current (note 1, 2)
5.5
5.5
5.5
V
O
= 0.1 V or
V
CC
-0.1V
V
O
= 0.1 V or
V
CC
-0.1V
I
O
=-50
µA
I
O
=-50
µA
I
O
=-50
µA
I
O
=-12 mA
I
O
=-24 mA
I
O
=-24 mA
I
O
=50
µA
I
O
=50
µA
I
O
=50
µA
I
O
=12 mA
I
O
=24 mA
I
O
=24 mA
V
I
= V
CC
or GND
V
I
= V
CC
or GND
2.9
4.4
5.4
2.56
3.86
4.86
0.002
0.001
0.001
0.1
0.1
0.1
0.36
0.36
0.36
T
A
= 25°C
Min.
2.1
3.15
3.85
Typ.
1.5
2.25
2.75
1.5
2.25
2.75
2.99
4.49
5.49
Max.
Value
-40 to 85°C
Min.
2.1
3.15
3.85
0.9
1.35
1.65
2.9
4.4
5.4
2.46
3.76
4.76
0.1
0.9
1.35
1.65
2.9
4.4
5.4
2.4
V
Max.
-55 to 125°C
Min.
2.1
3.15
3.85
0.9
1.35
1.65
Max.
V
Unit
V
IH
High Level Input
Voltage
Low Level Input
Voltage
High Level Output
Voltage
V
IL
V
V
OH
V
OLD
= 1.65 V max
V
OHD
= 3.85 V min
1) Maximum test duration 2ms, one output loaded at time
2) Incident wave switching is guaranteed on transmission lines with impedances as low as 50Ω
AC ELECTRICAL CHARACTERISTICS
(C
L
= 50 pF, R
L
= 500
Ω,
Input t
r
= t
f
= 3ns)
Symbol
b
O
t
PLH
t
PHL
Propagation Delay
Time
so
te
le
Parameter
r
P
uc
od
V
CC
(V)
3.3
(*)
5.0
(**)
s)
t(
b
-O
so
et
l
2
P
e
od
r
0.1
0.1
0.44
0.44
0.44
±
1
20
75
-75
s)
t(
uc
3.7
4.7
0.1
0.1
0.1
0.5
0.5
0.5
±
1
40
50
-50
µA
µA
mA
mA
V
±
0.1
Test Condition
T
A
= 25°C
Min.
1.5
1.5
Typ.
5.5
4.0
Max.
8.5
6.0
Value
-40 to 85°C
Min.
1.0
1.0
Max.
10.5
6.5
-55 to 125°C
Min.
1.0
1.0
Max.
11.0
7.0
ns
Unit
(*) Voltage range is 3.3V
±
0.3V
(**) Voltage range is 5.0V
±
0.5V
3/8
74AC10
CAPACITIVE CHARACTERISTICS
Test Condition
Symbol
Parameter
V
CC
(V)
5.0
5.0
f
IN
= 10MHz
33
pF
T
A
= 25°C
Min.
Typ.
4.5
Max.
Value
-40 to 85°C
Min.
Max.
-55 to 125°C
Min.
Max.
pF
Unit
C
IN
C
PD
Input Capacitance
Power Dissipation
Capacitance
(note 1)
1) C
PD
is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
CC(opr)
= C
PD
x V
CC
x f
IN
+ I
CC
/3 (per gate)
TEST CIRCUIT
C
L
= 50pF or equivalent (includes jig and probe capacitance)
R
L
= R
1
= 500Ω or equivalent
R
T
= Z
OUT
of pulse generator (typically 50Ω)
WAVEFORM: PROPAGATION DELAYS
(f=1MHz; 50% duty cycle)
O
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
s)
t(
uc
4/8
74AC10
Plastic DIP-14 MECHANICAL DATA
mm
MIN.
a1
B
b
b1
D
E
e
e3
F
I
L
Z
1.27
3.3
2.54
8.5
2.54
15.24
7.1
5.1
0.51
1.39
0.5
0.25
20
0.335
0.100
0.600
1.65
TYP.
MAX.
MIN.
0.020
0.055
0.020
0.010
0.787
0.065
inch
TYP.
MAX.
DIM.
O
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
0.050
P
e
od
r
0.130
s)
t(
uc
0.280
0.201
0.100
P001A
5/8
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