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RU1Z

产品描述0.4 A, SILICON, SIGNAL DIODE
产品类别半导体    分立半导体   
文件大小45KB,共2页
制造商ETC
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RU1Z概述

0.4 A, SILICON, SIGNAL DIODE

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BL
FEATURES
Low cos t
GALAXY ELECTRICAL
RU1P(Z)
VOLTAGE RANGE: 1000 V
CURRENT: 0.4 A
HIGH EFFICIENCY RECT IFIER
DO - 15L
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with freon, alcohol, ls opropand
and s im ilar s olvents
MECHANICAL DATA
Cas e: JEDEC DO-15L, m olded plas tic
Term inals : Axial leads ,s olderable per MIL-STD-202,
Method 208
Polarity: Color band denotes cathode
Weight: 0.017 ounces , 0.48 gram s
Mounting: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,50 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
RU1P
Maximum peak repetitive reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard rectif ied current
9.5mm lead length,
Peak f orw ard surge current
10ms single half -sine-w ave
superimposed on rated load
@T
J
=125
@T
A
=75
UNITS
V
V
V
A
V
RRM
V
R MS
V
DC
I
F(AV)
1000
700
1000
0.4
I
FSM
10.0
V
Maximum instantaneous f orw ard voltage
@ 0.4A
Maximum reverse current
at rated DC blocking voltage
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
Operating junction temperature range
Storage temperature range
N OTE: 1.Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
V
F
I
R
t
rr
C
J
R
θ
JL
T
J
T
STG
4.0
5.0
x
50.0
50
20
15
- 55 ----- + 150
- 55 ----- + 150
V
A
@T
A
=25
@T
A
=100
(Note1)
(Note2)
(Note3)
ns
pF
/W
www.galaxycn.com
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V D C .
3.Therm al resistance junction to am bient.
Document Number 0262039
BL
GALAXY ELECTRICAL
1
.

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描述 0.4 A, SILICON, SIGNAL DIODE 0.4 A, SILICON, SIGNAL DIODE

 
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