OM6050SJ OM6052SJ OM6054SJ
OM6051SJ OM6053SJ OM6055SJ
HIGH CURRENT MOSFET IN ISOLATED, TO-267
HERMETIC PACKAGE, SIZE 7 DIE, LOW R
DS(on)
High Current, High Voltage 100V Thru 1000V,
Up To 100 Amp N-Channel, Size 7 MOSFETs,
High Energy Capability
FEATURES
•
•
•
•
•
•
Isolated Hermetic Metal Package
Size 7 Die, High Energy
Fast Switching, Low Drive Current
Ease Of Paralleling For Added Power
Low R
DS(on)
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits. This series also features avalanche high energy capability
at elevated temperatures.
MAXIMUM RATINGS
@ 25°C
PART NUMBER
OM6050SJ
OM6051SJ
OM6052SJ
OM6053SJ
OM6054SJ
OM6055SJ
SCHEMATIC
1
V
DS
100 V
200 V
500 V
600 V
800 V
1000 V
R
DS(on)
.014
.030
.160
.230
.500
.800
I
D
(Continuous)
100 A
55 A
30 A
25 A
18 A
10 A
3.1
MECHANICAL OUTLINE
ø.165
.155
.805
.795
.290
.260
.065
.055
.150
.950 .140
.930
.665
.645
1 2 3
3
.750
.500
.200
.065
ø.055
2
.200
.400
.160
TO-267
4 11 R0
3.1 - 105
OM6050SJ - OM6055SJ
ABSOLUTE MAXIMUM RATINGS
(T
Parameter
Drain Source Voltage
Drain Gate Voltage (R
GS
= 1.0 M )
Continuous Drain Current @ T
C
= 25°C
2
Continuous Drain Current @ TC = 100°C
2
Pulsed Drain Current1
Max. Power Dissipation @ T
C
= 25°C
Max. Power Dissipation @ T
C
= 100°C
Linear Derating Factor Junction-to-Case
Linear Derating Factor Junction-to-Ambient
Operating and Storage Temp. Range
T
J
, T
stg
Symbol
V
DS
V
DGR
I
D
I
D
I
DM
P
D
P
D
C
= 25 C unless otherwise noted)
Unit
V
V
A
A
A
W
W
W/°C
W/°C
°C
°C
OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM6055SJ
100
100
100
43
235
200
200
55
23
135
500
500
30
13
80
280
110
2.22
.025
-55 to +150
275
2. Package Pin Limitation:
35 Amps.
600
600
25
10
75
800
800
18
7
50
1000
1000
10
4
30
Lead Temperature (1/16" from case for 10 sec.)
Notes: 1. Pulse Test:
Pulse Width
£
300
msec,
Duty Cycle
£
2%.
THERMAL RESISTANCE (MAXIMUM)
Junction-to-Case
Junction-to-Ambient (Free Air Operation)
@ TA = 25 C
.45
40
° C/W
° C/W
R
thJC
R
thJA
PRELIMINARY ELECTRICAL CHARACTERISTICS
Characteristic
Gate Threshold Voltage
Gate Source Leakage Current
Off State Drain-Source Leakage
Test Condition
V
DS
= V
GS
, I
D
= 250µA
V
GS
= ±20 V
DC
V
DS
= V
DSS
x 0.8
V
GS
= 0V
T
C
= 25°C
T
C
= 125°C
Symbol
V
GS(th)
I
GSS
I
DSS
I
DSS
(T
C
= 25°C unless otherwise noted)
Min.
2.0
Max.
4.0
±100
10
.10
100
200
500
600
800
1000
.014
.030
.160
.230
.500
.800
V
Units
V
nA
µA
mA
Part No.
All
All
All
All
OM6050SJ
OM6051SJ
3.1
Drain-Source Breakdown Voltage
V
GS
= 0V, I
D
= 250 µA
V
DSS
OM6052SJ
OM6053SJ
OM6054SJ
OM6055SJ
OM6050SJ
OM6051SJ
Drain-Source Breakdown Voltage
V
GS
= 10V, I
D
= I
D25
x 0.5
R
DS(on)
OM6052SJ
OM6053SJ
OM6054SJ
OM6055SJ
The above data is preliminary. Please contact factory for additional data
and the dynamic and switching characteristics.
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
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