MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF1090MA/D
Microwave Pulse
Power Transistors
Designed for Class B and C common base amplifier applications in short
pulse TACAN, IFF, and DME transmitters.
•
Guaranteed Performance @ 1090 MHz, 50 Vdc
Output Power = 90 Watts Peak
Minimum Gain = 8.4 dB
•
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
•
Industry Standard Package
•
Nitride Passivated
•
Gold Metallized for Long Life and Resistance to Metal Migration
•
Internal Input Matching for Broadband Operation
•
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MRF1090MA
MRF1090MB
90 W PEAK, 960 – 1215 MHz
MICROWAVE POWER
TRANSISTORS
NPN SILICON
MAXIMUM RATINGS
Rating
Collector–Base Voltage
Emitter–Base Voltage
Collector–Current — Peak (1)
Total Device Dissipation @ TC = 25°C (1) (2)
Derate above 25°C
Storage Temperature Range
Symbol
VCBO
VEBO
IC
PD
Tstg
Value
70
4.0
6.0
290
1.66
– 65 to +150
Unit
Vdc
Vdc
Adc
Watts
W/°C
°C
CASE 332–04, STYLE 1
(MRF1090MA)
CASE 332A–03, STYLE 1
(MRF1090MB)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (3)
Symbol
R
θJC
Max
0.6
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 25 mAdc, VBE = 0)
Collector–Base Breakdown Voltage
(IC = 25 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
70
70
4.0
—
—
—
—
—
—
—
—
5.0
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain (4)
(IC = 2.5 Adc, VCE = 5.0 Vdc)
hFE
10
30
—
—
NOTES:
(continued)
1. Pulse Width = 10
µs,
Duty Cycle = 1%.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
4. 80
µs
Pulse on Tektronix 576 or equivalent.
REV 8
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF1090MA MRF1090MB
1
ELECTRICAL CHARACTERISTICS — continued
(TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 50 Vdc, IE = 0, f = 1.0 MHz)
Cob
—
12
16
pF
FUNCTIONAL TESTS
(Pulse Width = 10
µs,
Duty Cycle = 1.0%)
Common–Base Amplifier Power Gain
(VCC = 50 Vdc, Pout = 90 W pk, f = 1090 MHz)
Collector Efficiency
(VCC = 50 Vdc, Pout = 90 W pk, f = 1090 MHz)
Load Mismatch
(VCC = 50 Vdc, Pout = 90 W pk, f = 1090 MHz,
VSWR = 10:1 All Phase Angles)
GPB
η
ψ
No Degradation in Power Output
8.4
35
10.8
40
—
—
dB
%
+
+
C2
L1
L2
C3
C4
–
50 Vdc
RF
INPUT
Z1
Z2
Z3
Z4
DUT
Z5
Z6
Z7
Z8
C1
Z9
RF
OUTPUT
C1, C2 — 220 pF Chip Capacitor, 100–mil ATC
C3 — 0.1
µF
C4 — 47
µF/75
V
L1, L2 — 3 Turns #18 AWG, 1/8″ ID
Z1 – Z9 — Distributed Microstrip Elements,
See Photomaster
Board Material — 0.031″ Thick Glass Teflon,
ε
r = 2.5
Figure 1. 1090 MHz Test Circuit
120
Pout , OUTPUT POWER (WATTS pk)
Pout , OUTPUT POWER (WATTS pk)
f = 960 MHz
100
1090 MHz
80
1215 MHz
120
Pin = 10.5 W pk
100
9 W pk
80
7.5 W pk
60
VCC = 50 V
tp = 10
µs
D = 1%
960
1090
f, FREQUENCY (MHz)
6 W pk
4.5 W pk
60
40
VCC = 50 V
tp = 10
µs
D = 1%
0
3
6
9
Pin, INPUT POWER (WATTS pk)
12
15
40
20
20
1215
Figure 2. Output Power versus Input Power
MRF1090MA MRF1090MB
2
Figure 3. Output Power versus Frequency
MOTOROLA RF DEVICE DATA
120
Pout , OUTPUT POWER (WATTS pk)
f = 1090 MHz
tp = 10
µs
D = 1%
Pin = 10.5 W pk
13
Po = 90 W pk
VCC = 50 V
tp = 10
µs
D = 1%
100
12
9 W pk
G PB , POWER GAIN (dB)
6 W pk
4.5 W pk
40
45
50
80
7.5 W pk
60
11
10
40
9
20
0
5
10
25
35
20
30
VCC, SUPPLY VOLTAGE (VOLTS)
15
8
960
1090
f, FREQUENCY (MHz)
1215
Figure 4. Output Power versus Supply Voltage
Figure 5. Power Gain versus Frequency
0
+ j5.0
+ j10
Pout = 90 W pk VCC = 50 V
tp = 10
µs
D = 1%
+ j15
f
MHz
960
1090
1215
Zin
Ohms
2.8 + j13.2
7.4 + j11.4
4.7 + j7.5
ZOL*
Ohms
7.6 + j3.5
7.6 + j4.0
7.7 + j4.5
5.0
ZOL*
f = 960 MHz
10
1215
Zin
f = 960 MHz
+ j20
1215
1090
1090
15
ZOL* = Conjugate of the optimum load
ZOL* =
impedance into which the device
ZOL* =
output operates at a given output
ZOL* =
power, voltage, and frequency.
Coordinates in Ohms
Figure 6. Series Equivalent Input/Output Impedance
Po = 90 W pk
VCC = 50 V
tp = 10
µs
D = 1%
f = 1090 MHz
Figure 7. Typical Pulse Performance
MOTOROLA RF DEVICE DATA
MRF1090MA MRF1090MB
3
PACKAGE DIMENSIONS
L
M
4
NOTES:
1. DIMENSION K APPLIES TWO PLACES.
2. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1973.
3
2
K
1
D
DIM
A
B
C
D
E
F
H
J
K
L
M
N
U
A
H
F
U
8–32 UNC 2A
J
N
C
–T–
SEATING
PLANE
STYLE 1:
PIN 1.
2.
3.
4.
BASE
EMITTER
BASE
COLLECTOR
MILLIMETERS
MIN
MAX
6.86
7.62
6.10
6.60
16.26
16.76
4.95
5.21
1.40
1.65
2.67
4.32
1.40
1.65
0.08
0.18
15.24
–––
2.41
2.67
45
_
NOM
4.97
6.22
2.92
3.68
INCHES
MIN
MAX
0.270
0.300
0.240
0.260
0.640
0.660
0.195
0.205
0.055
0.065
0.105
0.170
0.055
0.065
0.003
0.007
0.600
–––
0.095
0.105
45
_
NOM
0.180
0.245
0.115
0.145
E
–B–
0.76 (0.030)
M
T B
M
CASE 332–04
ISSUE D
(MRF1090MA)
F
4
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
C
D
F
H
J
K
INCHES
MIN
MAX
0.270
0.290
0.115
0.135
0.195
0.205
0.095
0.105
0.050
0.070
0.003
0.007
0.600
–––
BASE
EMITTER
BASE
COLLECTOR
MILLIMETERS
MIN
MAX
6.86
7.36
2.93
3.42
4.96
5.20
2.42
2.66
1.27
1.77
0.08
0.17
15.24
–––
K
1
3
D
2
H
SEATING
PLANE
A
J
C
STYLE 1:
PIN 1.
2.
3.
4.
CASE 332A–03
ISSUE D
(MRF1090MB)
MRF1090MA MRF1090MB
4
MOTOROLA RF DEVICE DATA
MOTOROLA RF DEVICE DATA
MRF1090MA MRF1090MB
5
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