BTA08, BTB08
T810, T835
Snubberless™, logic level and standard 8 A Triacs
Features
■
■
■
A2
On-state rms current, I
T(RMS)
8 A
Repetitive peak off-state voltage, V
DRM
/V
RRM
600 to 800 V
Triggering gate current, I
GT (Q1)
5 to 50 mA
A1 A2
G
A2
G
A1
A2
Description
Available either in through-hole or surface-mount
packages, the
BTA08, BTB08
and
T8
triac series
is suitable for general purpose AC switching. They
can be used as an ON/OFF function in
applications such as static relays, heating
regulation, induction motor starting circuits... or
for phase control operation in light dimmers,
motor speed controllers,...
The snubberless versions (BTA/BTB...W and T8
series) are specially recommended for use on
inductive loads, thanks to their high commutation
performances.
Logic level versions are designed to interface
directly with low power drivers such as
microcontrollers.
By using an internal ceramic pad, the BTA series
provides voltage insulated tab (rated at 2500
V
RMS
) complying with UL standards (file ref.:
E81734).
D
2
PAK
(T8-G)
A2
A1
A2
G
IPAK
(T8-H)
A1 A2
G
DPAK
(T8-B)
A2
A1
A2
G
A1
A2
G
TO-220AB Insulated
(BTA08)
TO-220AB
(BTB08)
March 2010
Doc ID 7472 Rev 7
1/12
www.st.com
12
Characteristics
BTA08, BTB08 and T8 Series
1
Table 1.
Symbol
Characteristics
Absolute maximum ratings
Parameter
IPAK/D
2
PAK/DPAK/
T
c
= 110 °C
TO-220AB
TO-220AB Ins.
I
TSM
I
²
t
dI/dt
I
GM
Non repetitive surge peak on-state current
(full cycle, T
j
initial = 25 °C)
I
²
t value for fusing
Critical rate of rise of on-state current I
G
= 2
x I
GT
,
t
r
≤
100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
F = 50 Hz
F = 60 Hz
t
p
= 10 ms
F = 120 Hz
t
p
= 20 µs
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
T
c
= 100 °C
t = 20 ms
t = 16.7 ms
80
A
84
36
50
4
1
- 40 to + 150
- 40 to + 125
A
²
s
A/µs
A
W
°C
Value
Unit
I
T(RMS)
On-state rms current (full sine wave)
8
A
P
G(AV)
T
stg
T
j
Table 2.
Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Snubberless and logic level (3 quadrants)
T8
BTA08 / BTB08
Unit
T810 T835
TW
5
1.3
0.2
15
25
MAX.
II
MIN.
30
40
5.4
MIN.
2.8
-
60
400
-
-
4.5
15
20
3.5
1.5
-
30
40
5.4
2.98
-
60
400
-
-
4.5
80
1000
-
-
7
A/ms
V/µs
35
50
10
10
15
25
35
50
50
70
mA
SW
10
CW
35
BW
50
mA
V
V
mA
MAX.
MAX.
MIN.
MAX.
I - III
10
35
Test conditions
Quadrant
I - II - III
I - II - III
I - II - III
Symbol
I
GT (1)
V
GT
V
GD
I
H (2)
I
L
dV/dt
(2)
V
D
= 12 V R
L
= 30
Ω
V
D
= V
DRM
R
L
= 3.3 kΩ
T
j
= 125 °C
I
T
= 100 mA
I
G
= 1.2 I
GT
V
D
= 67 %V
DRM
gate open
T
j
= 125 °C
(dV/dt)c = 0.1 V/µs
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
(dI/dt)c
(2)
(dV/dt)c = 10 V/µs
Without snubber
2/12
Doc ID 7472 Rev 7
BTA08, BTB08 and T8 Series
Table 3.
Symbol
Characteristics
Standard (4 quadrants)
BTA08 / BTB08
Test conditions
Quadrant
C
B
50
100
1.3
0.2
25
40
MAX.
II
T
j
= 125 °C
T
j
= 125 °C
MIN.
MIN.
80
200
5
100
400
10
V/µs
V/µs
50
50
mA
mA
V
V
mA
I - II - III
IV
ALL
V
D
= V
DRM
, R
L
= 3.3 kΩ, T
j
= 125 °C
I
T
= 500 mA
I - III - IV
I
G
= 1.2 I
GT
ALL
25
50
Unit
I
GT (1)
V
GT
V
GD
I
H (2)
I
L
V
D
= 12 V, R
L
= 33
Ω
MAX.
MAX.
MIN.
MAX.
dV/dt
(2)
V
D
= 67 %V
DRM
gate open
(dV/dt)c
(2)
(dI/dt)c = 5.3 A/ms
Table 4.
Symbol
V
TM (1)
V
t0 (2)
R
d (2)
I
DRM
I
RRM
Static characteristics
Test conditions
I
TM
= 11 A, t
p
= 380 µs
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
T
j
= 25 °C
T
j
= 125 °C
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
MAX.
MAX.
MAX.
MAX.
1
mA
Value
1.55
0.85
50
5
Unit
V
V
mΩ
µA
1. minimum I
GT
is guaranted at 5% of I
GT
max.
2. for both polarities of A2 referenced to A1.
Table 5.
Symbol
R
th(j-c)
Thermal resistance
Parameter
IPAK / D
2
PAK / DPAK / TO-220AB
Junction to case (AC)
TO-220AB Insulated
S = 1 cm
²
S = 0.5 cm
²
D
2
PAK
DPAK
TO-220AB / TO-220AB Insulated
IPAK
2.5
45
70
°C/W
60
100
Value
1.6
°C/W
Unit
R
th(j-a)
Junction to ambient
S = Copper surface under tab.
Doc ID 7472 Rev 7
3/12
Characteristics
BTA08, BTB08 and T8 Series
Figure 1.
P(W)
10
9
8
7
6
5
4
3
2
1
0
0
1
Maximum power dissipation versus Figure 2.
rms on-state current (full cycle)
I
T(RMS)
(A)
10
9
8
7
6
5
4
3
2
On-state rms current versus case
temperature (full cycle)
BTB / T8
BTA
I
T(RMS)
(A)
2
3
4
5
6
7
8
1
0
0
25
50
T
C
(°C)
75
100
125
Figure 3.
On-state rms current versus
ambient temperature (full cycle)
Figure 4.
Relative variation of thermal
impedance versus pulse
duration
I
T(RMS)
(A)
3.5
1E+0
K=[Z
th
/R
th
]
printed circuit board FR4, copper thickness: 35 µm
D
2
PAK
(S=1CM
2
)
Z
th(j-c)
DPAK/IPAK
Z
th(j-a)
3.0
2.5
1E-1
2.0
1.5
1.0
0.5
DPAK
(S=0.5CM
2
)
TO-220AB/D
2
PAK
Z
th(j-a)
1E-2
T
C
(°C)
0.0
0
25
50
75
100
125
t
p
(s)
1E-3
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
Figure 5.
I
TM
(A)
100
T
j
max.
V
to
= 0.85V
R
d
= 50 m
Ω
On-state characteristics
(maximum values)
Figure 6.
Surge peak on-state current
versus number of cycles
I
TSM
(A)
90
T
j
= T
j
max.
80
70
60
Non repetitive
T
j
initial=25°C
Repetitive
T
C
=110°C
t=20ms
One cycle
10
50
T
j
= 25°C.
40
30
20
V
TM
(V)
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
10
0
1
10
Number of cycles
100
1000
4/12
Doc ID 7472 Rev 7
BTA08, BTB08 and T8 Series
Characteristics
Figure 7.
Non-repetitive surge peak on-state
current for a sinusoidal
2
2
Figure 8.
Relative variation of gate trigger
current
I
TSM
(A), I t (A s)
1000
T
j
initial=25°C
I
GT
,I
H
,I
L
[T
j
] / I
GT
,I
H
,I
L
[T
j
=25°C]
2.5
holding current and latching current
versus junction temperature (typical values)
2.0
dI/dt limitation:
50A/µs
I
GT
I
TSM
1.5
1.0
I
H
& I
L
100
360°
α
pulse with width t
p
< 10 ms and corresponding value of I
2
t
I
2
t
0.5
10
0.01
0.10
1.00
t
p
(ms)
10.00
T
j
(°C)
0.0
-40
-20
0
20
40
60
80
100
120
140
Figure 9.
Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
Figure 10. Relative variation of critical rate of
decrease of main current versus
(dV/dt)c (typical values)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.0
Standard types
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
1.0
10.0
100.0
T810/SW
T835/CW/BW
TW
Snubberless and Logic level types
1.8
1.6
C
1.4
1.2
1.0
0.8
B
(dV/dt)c (V/µs)
0.6
0.4
0.1
1.0
(dV/dt)c (V/µs)
10.0
100.0
Figure 11. Relative variation of critical rate of
decrease of main current versus
junction temperature
(dI/dt)c [T
j
] / (dI/dt)c [T
j
specified]
6
5
4
3
2
1
Figure 12. DPAK and D
2
PAK thermal resistance
junction to ambient versus copper
surface under tab
R
th(j-a)
(°C/W)
100
90
80
70
60
50
40
30
20
D
2
PAK
DPAK
printed circuit board FR4, copper thickness: 35 µm
T
j
(°C)
0
0
25
50
75
100
125
10
0
0
4
8
12
16
S(cm²)
20
24
28
32
36
40
Doc ID 7472 Rev 7
5/12
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