Power Module
1700V 200A IGBT Module
MG17200D-BN4MM
Features
• IGBT
3
CHIP(1700V
Trench+Field Stop
technology)
• Low turn-off losses, short
tail current
• V
CE(sat)
with positive
temperature coefficient
Applications
Agency Approvals
AGENCY
AGENCY FILE NUMBER
E71639
RoHS
®
• DIODE CHIP(1700V
EMCON 3 technology)
• Free wheeling diodes
with fast and soft reverse
recovery
• High frequency switching
application
• Medical applications
• Motion/servo control
• UPS systems
Module Characteristics
(T
C
= 25°C, unless otherwise specified)
Symbol
T
J max)
T
J op
T
stg
V
isol
CTI
Torque
Torque
Weight
Parameters
Max. Junction Temperature
Operating Temperature
Storage Temperature
Insulation Test Voltage
Comparative Tracking Index
Module-to-Sink
Module Electrodes
Recommended (M6)
Recommended (M6)
AC, t=1min
350
3
2.5
320
5
5
N·m
N·m
g
-40
-40
4000
Test Conditions
Min
Typ
Max
150
125
125
Unit
°C
°C
°C
V
Absolute Maximum Ratings
(T
C
= 25°C, unless otherwise specified)
Symbol
IGBT
V
CES
V
GES
I
C
I
CM
P
tot
Diode
V
RRM
I
F(AV)
I
FRM
I
2
t
Repetitive Reverse Voltage
Average Forward Current
Repetitive Peak Forward Current
T
J
=25°C
T
C
=25°C
T
C
=80°C
t
P
=1ms
T
J
=125°C, t=10ms, V
R
=0V
1700
300
200
400
6500
V
A
A
A
A
2
S
Collector - Emitter Voltage
Gate - Emitter Voltage
DC Collector Current
Repetitive Peak Collector Current
Power Dissipation Per IGBT
T
C
=25°C
T
C
=80°C
t
P
=1ms
T
J
=25°C
1700
±20
300
200
400
1250
V
V
A
A
A
W
Parameters
Test Conditions
Values
Unit
Life Support Note:
Not Intended for Use in Life Support or Life Saving Applications
The products shown herein are not designed for use in life sustaining or life saving
applications unless otherwise expressly indicated.
MG17200D-BN4MM
1
277
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:07/21/16
Power Module
1700V 200A IGBT Module
Electrical and Thermal Specifications
(T
C
= 25°C, unless otherwise specified)
Symbol
IGBT
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
Gint
Q
ge
C
ies
C
res
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
I
SC
R
thJC
Diode
V
F
I
RRM
Q
rr
E
rec
R
thJCD
Forward Voltage
Max. Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Energy
I
F
=200A , V
GE
=0V, T
J
=25°C
I
F
=200A , V
GE
=0V, T
J
=125°C
I
F
=200A , V
R
=900V
di
F
/dt=-2700A/μs
T
J
=125°C
1.8
1.9
230
85
48
0.16
2.2
V
V
A
μC
mJ
K/W
Gate - Emitter Threshold Voltage
Collector - Emitter
Saturation Voltage
Collector Leakage Current
Gate Leakage Current
Intergrated Gate Resistor
Gate Charge
Input Capacitance
Reverse Transfer Capacitance
Turn - on Delay Time
Rise Time
Turn - off Delay Time
Fall Time
Turn - on Energy
Turn - off Energy
Short Circuit Current
V
CC
=900V
I
C
=200A
R
G
=6.8Ω
V
GE
=±15V
Inductive Load
V
CE
=900V, I
C
=200A , V
GE
=±15V
V
CE
=25V, V
GE
=0V, f =1MHz
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
T
J
=25°C
T
J
=125°C
t
psc
≤10μS , V
GE
=15V; T
J
=125°C,V
CC
=1000V
V
CE
=V
GE
, I
C
=8.0mA
I
C
=200A, V
GE
=15V, T
J
=25°C
I
C
=200A, V
GE
=15V, T
J
=125°C
V
CE
=1700V, V
GE
=0V, T
J
=25°C
V
CE
=1700V, V
GE
=0V, T
J
=125°C
V
CE
=0V,V
GE
=±20V, T
J
=125°C
-400
3.8
2.3
18
0.6
280
380
80
100
800
1000
120
200
58
78
43
63
800
0.1
5.2
5.8
2.0
2.4
3
20
400
6.4
2.45
V
V
V
mA
mA
nA
Ω
μC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
K/W
Parameters
Test Conditions
Min
Typ
Max
Unit
Junction-to-Case Thermal Resistance (Per IGBT)
Junction-to-Case Thermal Resistance (Per Diode)
MG17200D-BN4MM
2
278
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:07/21/16
Power Module
1700V 200A IGBT Module
Figure 1: Typical Output Characteristics
400
V
GE
=15V
Figure 2: Typical Output Characteristics
400
V
GE
=19V
V
GE
=17V
V
GE
=15V
V
GE
=13V
V
GE
=11V
V
GE
= 9V
320
240
160
80
0
0
T
j
=25°C
I
C
(A)
300
I
C
(A)
200
T
j
=125°C
T
j
=125°C
100
1.0
2.0
V
CE
V
3.0
4.0
0
0
1.0
3.0
2.0
V
CE
V
4.0
5.0
Figure 3: Typical Transfer characteristics
400
V
CE
=20V
Figure 4: Switching Energy vs. Gate Resistor
400
V
CE
=900V
I
C
=200A
V
GE
=±15V
T
j
=125°C
300
T
j
=25°C
300
E
on
200
T
j
=125°C
100
E
on
E
off
(mJ)
I
C
(A)
200
100
E
off
0
5
6
7
8
V
GE
9
V
10
11
12 13
0
0
10
20
30
40
R
G
Ω
50
60
70
Figure 5: Switching Energy vs. Collector Current
200
160
V
CE
=900V
R
G
=6.8
Ω
V
GE
=±15V
T
Vj
=125°C
E
on
Figure 6: Reverse Biased Safe Operating Area
400
320
240
160
80
E
on
E
off
(mJ)
120
80
40
0
0
E
off
I
C
(A)
R
G
=6.8 Ω
V
GE
=±15V
T
j
=125°C
50 100 150 200 250 300 350 400
I
C
A
0
0 200
600
1000
V
CE
V
1400
1800
MG17200D-BN4MM
279
3
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:07/21/16
Power Module
1700V 200A IGBT Module
Figure 7: Diode Forward Characteristics
400
Figure 8: Switching Energy vs. Gate Resistor
60
50
300
E
rec
(mJ)
I
F
=200
A
V
CE
=900V
T
j
=125°C
40
30
20
I
F
(A)
200
T
j
=125°C
100
10
T
j
=25°C
0
0
1.0
2.0
V
F
V
3.0
4.0
0
0
10
20
30
R
G
40
Ω
50
60
70
Figure 9: Switching Energy vs. Forward Current
100
80
60
R
G
=6.8Ω
V
CE
=900V
T
j
=125°C
Figure 10: Transient Thermal Impedance of
Diode and IGBT
1
Diode
Z
thJC
(K/W)
E
rec
(mJ)
0.1
IGBT
40
20
0
0
0.01
100
200
I
F
(A)
300
400
0.001
0.001
0.01
0.1
1
10
MG17200D-BN4MM
280
4
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:07/21/16
Power Module
1700V 200A IGBT Module
Dimensions-Package D
2.8x0.5
Circuit Diagram
3-M6
Packing Options
Part Number
MG17200D-BN4MM
Marking
MG17200D-BN4MM
Weight
320g
Packing Mode
Bulk Pack
M.O.Q
30
Part Numbering System
Part Marking System
MG17200 D - B N4 MM
PRODUCT TYPE
M: Power Module
MODULE TYPE
G: IGBT
VOLTAGE RATING
17: 1700V
CURRENT RATING
200: 200A
ASSEMBLY SITE
3
1
2
WAFER TYPE
4
5
6
7
CIRCUIT TYPE
PACKAGE TYPE
MG17200D-BN4MM
LOT NUMBER
Space
reserved
for QR
code
MG17200D-BN4MM
5
281
©2016 Littelfuse, Inc
Specifications are subject to change without notice.
Revised:07/21/16
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