PD - 97132
IRGP4086PbF
PDP TRENCH IGBT
Features
l
Advanced Trench IGBT Technology
l
Optimized for Sustain and Energy Recovery
Circuits in PDP Applications
TM
)
l
Low V
CE(on)
and Energy per Pulse (E
PULSE
for Improved Panel Efficiency
l
High Repetitive Peak Current Capability
l
Lead Free Package
Key Parameters
V
CE
min
V
CE(ON)
typ. @ I
C
= 70A
I
RP
max @ T
C
= 25°C
c
T
J
max
C
300
1.90
250
150
C
V
V
A
°C
G
E
G
E
C
n-channel
G
G ate
C
C ollector
TO-247AC
E
E m itter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trench IGBT technology to achieve low V
CE(on)
and low E
PULSETM
rating per silicon area which improve panel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Parameter
V
GE
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
RP
@ T
C
= 25°C
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Gate-to-Emitter Voltage
Continuous Collector Current, V
GE
@ 15V
Continuous Collector, V
GE
@ 15V
Repetitive Peak Current
c
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
300
10lbxin (1.1Nxm)
N
Max.
±30
70
40
250
160
63
1.3
-40 to + 150
Units
V
A
W
W/°C
°C
Thermal Resistance
Parameter
R
θJC
(IGBT)
R
θCS
R
θJA
Typ.
–––
0.24
–––
6.0 (0.21)
Max.
0.8
–––
40
–––
Units
°C/W
g (oz)
Thermal Resistance Junction-to-Case-(each IGBT)
d
Case-to-Sink (flat, greased surface)
Junction-to-Ambient (typical socket mount)
d
Weight
www.irf.com
1
4/17/08
IRGP4086PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
CES
Min.
Typ. Max. Units
–––
0.29
1.29
1.49
1.90
2.57
2.27
–––
-11
2.0
5.0
100
–––
–––
29
65
22
36
31
112
65
30
33
145
98
–––
1075
1432
2250
110
58
5.0
13
–––
–––
1.46
1.67
2.10
2.96
–––
5.0
–––
25
–––
–––
100
-100
–––
–––
–––
—
—
—
—
—
—
—
—
–––
–––
–––
–––
–––
–––
–––
nH
–––
pF
ns
μJ
ns
ns
S
nC
nA
V
mV/°C
μA
V
V
Conditions
V
GE
= 0V, I
CE
= 1 mA
Collector-to-Emitter Breakdown Voltag 300
–––
–––
ΔΒV
CES
/ΔT
J
Breakdown Voltage Temp. Coefficient –––
V/°C Reference to 25°C, I
CE
= 1mA
V
GE
= 15V, I
CE
= 25A
e
V
GE
= 15V, I
CE
= 40A
e
V
GE
= 15V, I
CE
= 70A
e
V
GE
= 15V, I
CE
= 120A
e
V
GE
= 15V, I
CE
= 70A, T
J
= 150°C
V
CE
= V
GE
, I
CE
= 500μA
V
CE
= 300V, V
GE
= 0V
V
CE
= 300V, V
GE
= 0V, T
J
= 100°C
V
CE
= 300V, V
GE
= 0V, T
J
= 150°C
V
GE
= 30V
V
GE
= -30V
V
CE
= 25V, I
CE
= 25A
V
CE
= 200V, I
C
= 25A, V
GE
= 15Ve
I
C
= 25A, V
CC
= 196V
R
G
= 10Ω, L=200μH, L
S
= 200nH
T
J
= 25°C
I
C
= 25A, V
CC
= 196V
R
G
= 10Ω, L=200μH, L
S
= 200nH
T
J
= 150°C
V
CC
= 240V, V
GE
= 15V, R
G
= 5.1Ω
L = 220nH, C= 0.40μF, V
GE
= 15V
V
CC
= 240V, R
G
= 5.1Ω, T
J
= 25°C
L = 220nH, C= 0.40μF, V
GE
= 15V
V
CC
= 240V, R
G
= 5.1Ω, T
J
= 100°C
V
GE
= 0V
V
CE
= 30V
ƒ = 1.0MHz,
Between lead,
6mm (0.25in.)
from package
and center of die contact
See Fig.13
V
CE(on)
Static Collector-to-Emitter Voltage
–––
–––
–––
V
GE(th)
Gate Threshold Voltage
2.6
–––
–––
–––
–––
ΔV
GE(th)
/ΔT
J
Gate Threshold Voltage Coefficient
I
CES
Collector-to-Emitter Leakage Current
I
GES
g
fe
Q
g
Q
gc
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
t
st
E
PULSE
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Shoot Through Blocking Time
Energy per Pulse
–––
–––
–––
–––
–––
—
—
—
—
—
—
—
—
100
–––
–––
C
iss
C
oss
C
rss
L
C
L
E
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Collector Inductance
Internal Emitter Inductance
–––
–––
–––
–––
–––
Notes:
Half sine wave with duty cycle = 0.1, ton=2μsec.
R
θ
is measured at
T
J
of approximately 90°C.
Pulse width
≤
400μs; duty cycle
≤
2%.
2
www.irf.com
IRGP4086PbF
240
VGE = 18V
200
160
ICE (A)
240
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
VGE = 18V
200
160
ICE (A)
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
120
80
40
0
0
4
8
VCE (V)
120
80
40
0
12
16
0
4
8
VCE (V)
12
16
Fig 1. Typical Output Characteristics @ 25°C
240
VGE = 18V
200
160
ICE (A)
Fig 2. Typical Output Characteristics @ 75°C
240
VGE = 18V
200
160
ICE (A)
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
120
80
40
0
0
4
8
VCE (V)
120
80
40
0
12
16
0
4
8
VCE (V)
12
16
Fig 3. Typical Output Characteristics @ 125°C
240
200
160
ICE (A)
Fig 4. Typical Output Characteristics @ 150°C
10
IC = 25A
TJ = 25°C
TJ = 150°C
VCE (V)
8
6
120
80
40
0
2
4
6
8
10
12
14
16
VGE (V)
TJ = 25°C
TJ = 150°C
4
2
0
5
10
VGE (V)
15
20
Fig 5. Typical Transfer Characteristics
Fig 6. V
CE(ON)
vs. Gate Voltage
www.irf.com
3
IRGP4086PbF
80
70
IC, Collector Current (A)
300
Repetitive Peak Current (A)
60
50
40
30
20
10
0
0
25
50
75
100
125
150
200
100
ton= 2μs
Duty cycle = 0.1
Half Sine Wave
0
25
50
75
100
125
150
Case Temperature (°C)
T C, Case Temperature (°C)
Fig 7. Maximum Collector Current vs. Case Temperature
1500
1400
1300
Energy per Pulse (μJ)
Fig 8. Typical Repetitive Peak Current vs. Case Temperature
1600
L = 220nH
C = 0.4μF
VCC = 240V
L = 220nH
C = variable
100°C
1400
Energy per Pulse (μJ)
100°C
1200
1100
1000
900
800
700
600
500
400
160
170
180
190
200
1200
1000
800
600
400
200
25°C
25°C
210
220
230
150 160 170 180 190 200 210 220 230 240
VCE, Collector-to-Emitter Voltage (V)
IC, Peak Collector Current (A)
Fig 9. Typical E
PULSE
vs. Collector Current
2000
VCC = 240V
1600
Energy per Pulse (μJ)
Fig 10. Typical E
PULSE
vs. Collector-to-Emitter Voltage
1000
L = 220nH
t = 1μs half sine
C= 0.4μF
100
IC (A)
1200
10
μs
100
μs
800
C= 0.3μF
10
1ms
400
C= 0.2μF
1
0
25
50
75
100
125
150
TJ, Temperature (ºC)
1
10
VCE (V)
100
1000
Fig 11. E
PULSE
vs. Temperature
Fig 12. Forward Bias Safe Operating Area
4
www.irf.com
IRGP4086PbF
10000
25
VGE, Gate-to-Source Voltage (V)
ID= 25A
VDS = 240V
VDS = 200V
VDS = 150V
Cies
Capacitance (pF)
1000
20
15
10
100
Coes
Cres
10
0
100
200
300
5
0
0
20
40
60
80
100
QG Total Gate Charge (nC)
VCE (V)
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage
1
Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
D = 0.50
Thermal Response ( Z thJC )
0.20
0.1
0.10
0.05
0.02
0.01
τ
J
τ
J
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
C
τ
1
τ
2
τ
3
τ
3
τ
Ri (°C/W)
τι
(sec)
0.01
Ci=
τi/Ri
Ci=
τi/Ri
0.084697 0.000038
0.374206 0.001255
0.341867 0.013676
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case (IGBT)
www.irf.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
