20ETS..FP High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 20 A
Base
cathode
2
DESCRIPTION/FEATURES
The 20ETS..FP rectifier High Voltage Series has been
optimized for very low forward voltage drop, with moderate
leakage. The glass passivation technology used has reliable
operation up to 150 °C junction temperature.
Typical applications are in input rectification and these
products are designed to be used with Vishay HPP switches
and output rectifiers which are available in identical package
outlines.
Fully isolated package (V
INS
= 2500 V
RMS
) is UL E78996
approved
This product has been designed and qualified for industrial
level.
TO-220 FULL-PAK
1
Cathode
3
Anode
PRODUCT SUMMARY
V
F
at 10 A
I
FSM
V
RRM
<1V
300 A
800/1200 V
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
Capacitive input filter T
A
= 55 °C, T
J
= 125 °C
common heatsink of 1 °C/W
SINGLE-PHASE BRIDGE
18
THREE-PHASE BRIDGE
22
UNITS
A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
10 A, T
J
= 25 °C
CHARACTERISTICS
Sinusoidal waveform
Range
VALUES
20
800/1200
300
1.0
- 40 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PART NUMBER
20ETS08FP
20ETS12FP
V
RRM
, MAXIMUM
PEAK REVERSE VOLTAGE
V
800
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1300
I
RRM
AT 150 °C
mA
1
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
Maximum peak one cycle
non-repetitive surge current
Maximum I
2
t for fusing
Maximum I
2
√t
for fusing
SYMBOL
I
F(AV)
I
FSM
I
2
t
I
2
√t
TEST CONDITIONS
T
C
= 51 °C, 180° conduction half sine wave
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
RRM
applied
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
VALUES
20
250
300
316
442
4420
A
2
s
A
2
√s
A
UNITS
Document Number: 93503
Revision: 30-Jun-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
20ETS..FP High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 20 A
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
V
FM
r
t
V
F(TO)
I
RM
TEST CONDITIONS
20 A, T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
VALUES
1.1
10.4
0.85
V
R
= Rated V
RRM
0.1
1.0
UNITS
V
mΩ
V
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
minimum
maximum
Case style TO-220 FULL-PAK (94/V0)
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, smooth and greased
DC operation
TEST CONDITIONS
VALUES
- 40 to 150
2.8
62
0.5
2
0.07
6.0 (5.0)
12 (10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
Mounting torque
Marking device
20ETS08
20ETS12
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93503
Revision: 30-Jun-08
20ETS..FP High Voltage Series
Input Rectifier Diode, 20 A
Vishay High Power Products
150
35
Maximum Average Forward
Power Loss (W)
20ETS.. Series
Maximum Allowable Case
Temperature (°C)
30
25
20
125
100
DC
180°
120°
90°
60°
30°
RMS limit
Ø
75
180°
120°
90°
60°
30°
Conduction angle
15
10
5
0
Ø
Conduction period
20ETS.. Series
T
J
= 150 °C
0
5
10
15
20
25
50
25
0
4
8
12
16
20
24
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average
Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
Peak Half Sine Wave Forward Current (A)
150
300
Maximum Allowable Case
Temperature (°C)
20ETS.. Series
125
250
At any rated load condition and
with
rated
V
RRM
applied following surge.
Initial T
J
= 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
100
Ø
200
Conduction period
360°
180°
120°
90°
60°
30°
0
5
10
15
20
25
30
35
75
150
50
100
20ETS.. Series
50
25
1
10
100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Peak Half Sine Wave Forward Current (A)
30
300
Maximum Average Forward
Power Loss (W)
25
20
15
10
5
0
180°
120°
90°
60°
30°
250
RMS limit
Maximum non-repetitive surge current
versus
pulse train duration.
Initial T
J
= 150 °C
No voltage
reapplied
Rated
V
RRM
reapplied
200
150
Ø
Conduction angle
20ETS.. Series
T
J
= 150 °C
0
4
8
12
16
20
24
100
20ETS.. Series
50
0.01
0.1
1
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 93503
Revision: 30-Jun-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
20ETS..FP High Voltage Series
Vishay High Power Products
Input Rectifier Diode, 20 A
1000
T
J
= 25 °C
I
F
- Instantaneous
Forward Current (A)
100
T
J
= 150 °C
10
20ETS.. Series
1
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
10
Z
thJC
- Transient Thermal
Impedance (°C/W)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
1
Single pulse
(thermal resistance)
0.1
0.0001
0.001
0.01
20ETS.. Series
10
100
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
www.vishay.com
4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 93503
Revision: 30-Jun-08
20ETS..FP High Voltage Series
Input Rectifier Diode, 20 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
20
1
1
2
3
4
5
6
7
-
-
-
-
-
-
-
E
2
T
3
S
4
12
5
FP
6
-
7
Current rating (20 = 20 A)
Circuit configuration:
E = Single diode
Package:
T = TO-220
Type of silicon:
S = Standard recovery rectifier
Voltage ratings
FULL-PAK
None = Standard production
PbF = Lead (Pb)-free
08 = 800 V
12 = 1200 V
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
http://www.vishay.com/doc?95005
http://www.vishay.com/doc?95009
Document Number: 93503
Revision: 30-Jun-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
创意市集
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
