VS-EBU15006HF4
www.vishay.com
Vishay Semiconductors
Ultrafast Soft Recovery Diode, 150 A FRED Pt
®
FEATURES
• Ultrafast recovery time
• 175 °C max. operating junction temperature
• Screw mounting only
Cathode
Anode
• AEC-Q101 qualified
• PowerTab
®
package
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
PowerTab
®
BENEFITS
• Reduced RFI and EMI
• Higher frequency operation
• Reduced snubbing
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
(typ.)
T
J
max.
Diode variation
PowerTab
®
150 A
600 V
1.08 V
50 ns
175 °C
Single die
• Reduced parts count
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI/RFI in
high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Operating junction and storage
temperatures
SYMBOL
V
R
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 89 °C
T
C
= 25 °C
TEST CONDITIONS
MAX.
600
150
1200
-55 to +175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
= 200 μA
I
F
= 150 A
Forward voltage
I
F
= 150 A, T
J
= 125 °C
I
F
= 150 A, T
J
= 175 °C
Reverse leakage current
Junction capacitance
Series inductance
I
R
C
T
L
S
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
-
TYP.
-
1.27
1.15
1.08
-
-
70
3.5
MAX.
-
1.63
1.43
1.32
8
0.5
-
-
μA
mA
pF
nH
V
UNITS
Revision: 16-Jun-15
Document Number: 94806
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-EBU15006HF4
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 100 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 50 A
V
R
= 200 V
dI
F
/dt = 200 A/μs
MIN.
-
-
-
-
-
-
-
-
TYP.
50
40
100
210
10.5
22
550
2350
MAX.
-
-
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style PowerTab
®
SYMBOL
R
thJC
R
thCS
Mounting surface, flat, smooth and greased
TEST CONDITIONS
MIN.
-
-
-
-
1.2
(10)
TYP.
-
0.2
-
0.18
-
MAX.
0.35
K/W
-
5.02
-
2.4
(20)
g
oz.
kgf · cm
(lbf · in)
UNITS
EBU15006H
Revision: 16-Jun-15
Document Number: 94806
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-EBU15006HF4
www.vishay.com
Vishay Semiconductors
1000
175 °C
I
F
- Instantaneous Forward Current (A)
1000
I
R
- Reverse Current (μA)
100
150 °C
10
1
0.1
25 °C
0.01
0.001
0.0001
125 °C
100
T
J
= 175 °C
10
T
J
= 125 °C
T
J
= 25 °C
1
0.0
0.5
1.0
1.5
2.0
0
100
200
300
400
500
600
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
100
C
T
- Junction Capacitance (pF)
10
1
0
100
200
300
400
500
600
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
Z
thJC
- Thermal Impedance (°C/W)
D = 0.5
0.1
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single
Pulse
(Thermal Resistance)
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Revision: 16-Jun-15
Document Number: 94806
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-EBU15006HF4
www.vishay.com
180
250
Vishay Semiconductors
Allowable Case Temperature (°C)
160
140
200
I
F
= 50 A, 125 °C
t
rr
(ns)
120
100
80
60
DC
150
I
F
= 50 A, 25 °C
100
typical value
40
0
50
100
150
200
250
50
100
1000
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
350
dI
F
/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
3500
RMS Limit
3000
I
F
= 50 A, 125 °C
2500
Average Power Loss (W)
300
250
200
150
100
50
0
0
50
100
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
Q
rr
(nC)
2000
1500
1000
500
typical value
0
I
F
= 50 A, 25 °C
150
200
250
100
1000
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
(3)
dI
F
/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 9 - Reverse Recovery Waveform and Definitions
Revision: 16-Jun-15
Document Number: 94806
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-EBU15006HF4
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
1
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
E
2
B
3
U
4
150
5
06
6
H
7
F4
8
Vishay Semiconductors product
Single diode
PowerTab
®
Ultrafast recovery
Current rating (150 = 150 A)
Voltage rating (06 = 600 V)
H = AEC-Q101 qualified
Environmental digit:
F4 = RoHS-compliant and totally lead (Pb)-free
ORDERING INFORMATION
(Example)
PREFERRED P/N
VS-EBU15006HF4
QUANTITY PER T/R
25
MINIMUM ORDER QUANTITY
375
PACKAGING DESCRIPTION
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Application note
www.vishay.com/doc?95240
www.vishay.com/doc?95467
www.vishay.com/doc?95179
Revision: 16-Jun-15
Document Number: 94806
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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