Freescale Semiconductor
Technical Data
Document Number: MRF7S21080H
Rev. 1, 3/2011
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2110 to
2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for TD--SCDMA and PCN--PCS/cellular radio
applications.
•
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
=
800 mA, P
out
= 22 Watts Avg., f = 2167.5 MHz, IQ Magnitude Clipping,
Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF.
Power Gain — 18 dB
Drain Efficiency — 32%
Device Output Signal PAR — 6.5 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset — --38 dBc in 3.84 MHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 80 Watts CW
Peak Tuned Output Power
•
P
out
@ 1 dB Compression Point
≃
80 Watts CW
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•
Designed for Digital Predistortion Error Correction Systems
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
MRF7S21080HR3
MRF7S21080HSR3
2110-
-2170 MHz, 22 W AVG., 28 V
SINGLE W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFETs
CASE 465-
-06, STYLE 1
NI-
-780
MRF7S21080HR3
CASE 465A-
-06, STYLE 1
NI-
-780S
MRF7S21080HSR3
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
Value
--0.5, +65
--6.0, +10
32, +0
-- 65 to +150
150
225
Unit
Vdc
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 79°C, 79 W CW
Case Temperature 75°C, 22 W CW
Symbol
R
θJC
Value
(2,3)
0.60
0.65
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
©
Freescale Semiconductor, Inc., 2007, 2011. All rights reserved.
MRF7S21080HR3 MRF7S21080HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1C (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 174
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
D
= 800 mAdc)
Fixture Gate Quiescent Voltage
(1)
(V
DD
= 28 Vdc, I
D
= 800 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 1.74 Adc)
Dynamic Characteristics
(2)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Input Capacitance
(V
DS
= 28 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
rss
C
oss
C
iss
—
—
—
0.64
296
160
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1.5
—
4
0.1
2
2.7
5.5
0.2
3
—
7
0.3
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 800 mA, P
out
= 22 W Avg., f = 2167.5 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel
Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
G
ps
η
D
PAR
ACPR
IRL
16.5
30
5.7
—
—
18
32
6.5
--38
--16
19.5
—
—
--35
--9
dB
%
dB
dBc
dB
1. V
GG
= 2 x V
GS(Q)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally matched both on input and output.
(continued)
MRF7S21080HR3 MRF7S21080HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Video Bandwidth @ 70 W PEP P
out
where IM3 = --30 dBc
(Tone Spacing from 100 kHz to VBW)
∆IMD3
= IMD3 @ VBW frequency -- IMD3 @ 100 kHz <1 dBc (both
sidebands)
Gain Flatness in 60 MHz Bandwidth @ P
out
= 22 W Avg.
Average Deviation from Linear Phase in 60 MHz Bandwidth
@ P
out
= 80 W CW
Average Group Delay @ P
out
= 80 W CW, f = 2140 MHz
Part--to--Part Insertion Phase Variation @ P
out
= 80 W CW,
f = 2140 MHz, Six Sigma Window
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
Symbol
VBW
—
10
—
Min
Typ
Max
Unit
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 800 mA, 2110--2170 MHz Bandwidth
G
F
Φ
Delay
∆Φ
∆G
∆P1dB
—
—
—
—
—
—
0.12
22.3
6.21
151.6
0.009
0.008
—
—
—
—
—
—
dB
°
ns
°
dB/°C
dB/°C
MRF7S21080HR3 MRF7S21080HSR3
RF Device Data
Freescale Semiconductor
3
V
BIAS
C5
R1
R2
Z15
V
SUPPLY
+
C4
C3
Z14
C10
C12
C13
C16
R3
RF
INPUT
Z1
C1
C17
C2
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
C9
C6
Z16
C7
C8
Z13
RF
OUTPUT
DUT
C11
C14
C15
Z1
Z2*
Z3*
Z4*
Z5
Z6
Z7
Z8
Z9*
0.325″ x 0.083″ Microstrip
0.921″ x 0.083″ Microstrip
0.126″ x 0.083″ Microstrip
0.645″ x 0.083″ Microstrip
0.275″ x 0.669″ Microstrip
0.114″ x 0.764″ Microstrip
0.374″ x 0.764″ Microstrip
0.180″ x 0.524″ Microstrip
0.075″ x 0.083″ Microstrip
Z10*
Z11*
Z12*
Z13
Z14*
Z15, Z16*
PCB
0.457″ x 0.083″ Microstrip
0.118″ x 0.083″ Microstrip
0.206″ x 0.083″ Microstrip
0.301″ x 0.083″ Microstrip
1.220″ x 0.080″ Microstrip
0.720″ x 0.080″ Microstrip
Taconic TLX8--0300, 0.030″,
ε
r
= 2.55
* Variable for tuning
Figure 1. MRF7S21080HR3(HSR3) Test Circuit Schematic
Table 5. MRF7S21080HR3(HSR3) Test Circuit Component Designations and Values
Part
C1, C3, C9, C10, C11
C2
C4
C5, C12, C13, C14, C15
C6
C7, C8, C17
C16
R1, R2
R3
Description
6.8 pF Chip Capacitors
0.5 pF Chip Capacitor
220 nF Chip Capacitor
10
μF,
50 V Chip Capacitors
1.5 pF Chip Capacitor
0.2 pF Chip Capacitors
220
μF,
63 V Electrolytic Capacitor, Radial
2 KΩ, 1/4 W Chip Resistors
10
Ω,
1/4 W Chip Resistor
Part Number
ATC100B6R8BT500XT
ATC100B0R5BT500XT
18125C224KAT1A
C5750X5R1H106M
ATC100B1R5BT500XT
ATC100B0R2BT500XT
222213668221
CRCW12062001FKEA
CRCW120610R0FKEA
Manufacturer
ATC
ATC
AVX
TDK
ATC
ATC
Vishay
Vishay
Vishay
MRF7S21080HR3 MRF7S21080HSR3
4
RF Device Data
Freescale Semiconductor
R2
V
GS
R1
C4
C3
C5
C10
R3
C16
C12
C13
V
DD
C1
C17 C2
CUT OUT AREA
C6
C7 C8
C9
C11
C14
C15
MRF7S21080H
Rev. 1
Figure 2. MRF7S21080HR3(HSR3) Test Circuit Component Layout
MRF7S21080HR3 MRF7S21080HSR3
RF Device Data
Freescale Semiconductor
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
