Datasheet> 器件分类 > 半导体> 分立半导体> BF 2040W E6814

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BF 2040W E6814: 产品描述RF MOSFET Transistors Silicon N-Channel MOSFET Tetrode 5V; 产品类别半导体分立半导体; 文件大小201KB，共11页; 制造商Infineon(英飞凌); 官网地址http://www.infineon.com/; 标准

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BF 2040W E6814概述

RF MOSFET Transistors Silicon N-Channel MOSFET Tetrode 5V

BF 2040W E6814规格参数

参数名称	属性值
Product Attribute	Attribute Value
制造商 Manufacturer	Infineon(英飞凌)
产品种类 Product Category	RF MOSFET Transistors
RoHS	Details
Transistor Polarity	N-Channel
Id - Continuous Drain Current	40 mA
Vds - Drain-Source Breakdown Voltage	8 V
技术 Technology	Si
最小工作温度 Minimum Operating Temperature	- 55 C
最大工作温度 Maximum Operating Temperature	+ 150 C
安装风格 Mounting Style	SMD/SMT
封装 / 箱体 Package / Case	SOT-343
系列 Packaging	Cut Tape
系列 Packaging	Reel
Configuration	Single Dual Gate
高度 Height	0.9 mm
长度 Length	2 mm
类型 Type	RF Small Signal MOSFET
宽度 Width	1.25 mm
Channel Mode	Depletion
Pd-功率耗散 Pd - Power Dissipation	200 mW
工厂包装数量 Factory Pack Quantity	3000
Vgs - Gate-Source Voltage	6 V

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BF2040...

Silicon N-Channel MOSFET Tetrode

•

For low noise , high gain controlled

input stages up to 1GHz

•

Operating voltage 5 V

•

Pb-free (RoHS compliant) package

•

Qualified according AEC Q101

ESD

(Electrostatic

discharge)

sensitive device, observe handling precaution!

Type

BF2040

BF2040R

BF2040W

Package

SOT143

SOT143R

SOT343

1=S

1=D

2=D

2=S

Pin Configuration

3=G2

3=G1

4=G1

4=G2

Marking

NFs

Maximum Ratings

Parameter

Drain-source voltage

Continuous drain current

Gate 1/ gate 2-source current

Gate 1 (external biasing)

Total power dissipation

≤

76 °C, BF2040, BF2040R

≤

94 °C, BF2040W

Storage temperature

Channel temperature

Thermal Resistance

Parameter

Channel - soldering point

BF2040, BF2040R

BF2040W

For

Symbol

±I

G1/2SM

G1SE

tot

Value

200

Unit

stg

Symbol

thchs

-55 ... 150

150

°C

Value

≤

370

≤

280

Unit

K/W

calculation of

thJA please refer to Application Note Thermal Resistance

2007-06-01

BF 2040W E6814相似产品对比

	BF 2040W E6814	BF-2040R-E6814	BF 2040W H6814
描述	RF MOSFET Transistors Silicon N-Channel MOSFET Tetrode 5V	RF MOSFET Transistors Silicon N Channel MOSFET Tetrode	RF MOSFET Transistors RF MOSFETS
Product Attribute	Attribute Value	Attribute Value	Attribute Value
制造商 Manufacturer	Infineon(英飞凌)	Infineon(英飞凌)	Infineon(英飞凌)
产品种类 Product Category	RF MOSFET Transistors	RF MOSFET Transistors	RF MOSFET Transistors
RoHS	Details	Details	Details
Transistor Polarity	N-Channel	N-Channel	N-Channel
Id - Continuous Drain Current	40 mA	40 mA	40 mA
Vds - Drain-Source Breakdown Voltage	8 V	8 V	10 V
技术 Technology	Si	Si	Si
最大工作温度 Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
安装风格 Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
封装 / 箱体 Package / Case	SOT-343	SOT-143	SOT-343
Configuration	Single Dual Gate	Single Dual Gate	Single
类型 Type	RF Small Signal MOSFET	RF Small Signal MOSFET	RF Small Signal MOSFET
Pd-功率耗散 Pd - Power Dissipation	200 mW	200 mW	200 mW
工厂包装数量 Factory Pack Quantity	3000	3000	3000
Vgs - Gate-Source Voltage	6 V	6 V	6 V
最小工作温度 Minimum Operating Temperature	- 55 C	- 55 C	-
系列 Packaging	Reel	Reel	Reel
高度 Height	0.9 mm	1 mm	-
长度 Length	2 mm	2.9 mm	-
宽度 Width	1.25 mm	1.3 mm	-
Channel Mode	Depletion	Depletion	-

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