This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1555DL
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= V
GS
, I
D
= - 250 µA
V
DS
= 0 V, V
GS
= ± 12 V
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 20 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 8 V, V
GS
= 0 V
V
DS
= 20 V, V
GS
= 0 V, T
J
= 85 °C
V
DS
= - 8 V, V
GS
= 0 V, T
J
= 85 °C
On-State Drain Current
a
I
D(on)
V
DS
5
V, V
GS
= 4.5 V
V
DS
-
5 V, V
GS
= - 4.5 V
V
GS
= 4.5 V, I
D
= 0.66 A
V
GS
= - 4.5 V, I
D
= - 0.57 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 2.5 V, I
D
= 0.40 A
V
GS
= - 2.5 V, I
D
= - 0.48 A
V
GS
= - 1.8 V, I
D
= - 0.20 A
Forward Transconductance
a
Diode Forward Voltage
a
Dynamic
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
P-Channel
V
DS
= - 4 V, V
GS
= - 4.5 V, I
D
= - 0.57 A
N-Ch
N-Channel
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 0.66 A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
N-Channel
V
DD
= 10 V, R
L
= 20
I
D
0.5 A, V
GEN
= 4.5 V, R
g
= 6
P-Channel
V
DD
= - 4 V, R
L
= 8
I
D
- 0.5 A, V
GEN
= - 4.5 V, R
g
= 6
I
F
= 0.23 A, dI/dt = 100 A/µs
I
F
= - 0.23 A, dI/dt = 100 A/µs
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
0.8
1.5
0.06
0.17
0.30
0.16
10
6
16
25
10
10
10
10
20
20
20
12
30
50
20
20
20
20
40
40
ns
1.2
2.3
nC
g
fs
V
SD
V
DS
= 10 V, I
D
= 0.66 A
V
DS
= - 4 V, I
D
= - 0.57 A
I
S
= 0.23 A, V
GS
= 0 V
I
S
= - 0.23 A, V
GS
= 0 V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
1
-1
0.320
0.510
0.560
0.720
1.000
1.5
1.2
0.8
- 0.8
1.2
- 1.2
0.385
0.600
0.630
0.850
1.200
S
V
0.6
- 0.45
1.4
-1
± 100
± 100
1
-1
5
-5
A
µA
V
nA
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
300 µs, duty cycle
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
For technical questions, contact:
pmostechsupport@vishay.com
Document Number: 71079
S13-0631-Rev. F, 25-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Si1555DL
Vishay Siliconix
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
1.0
V
GS
= 5
V
thru 2.5
V
0.8
I
D
- Drain Current (A)
2
V
0.6
I
D
- Drain Current (A)
0.8
1.0
0.6
0.4
0.4
T
C
= 125 °C
0.2
0.2
1.5
V
1
V
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25 °C
- 55 °C
0.0
0.0
0.5
1.0
1.5
2.0
2.5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
1.0
100
Transfer Characteristics
R
DS(on)
- On-Resistance (Ω)
0.8
C - Capacitance (pF)
80
C
iss
60
0.6
V
GS
= 2.5
V
0.4
V
GS
= 4.5
V
40
C
oss
20
C
rss
0.2
0.0
0.0
0
0.2
0.4
0.6
0.8
1.0
0
4
8
12
16
20
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current
5
V
DS
= 10
V
I
D
= 0.66 A
4
R
DS(on)
- On-Resistance
(Normalized)
1.4
1.6
V
GS
= 4.5
V
I
D
= 0.66 A
Capacitance
V
GS
- Gate-to-Source
Voltage
(V)
3
1.2
2
1.0
1
0.8
0
0.0
0.2
0.4
0.6
0.8
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 71079
S13-0631-Rev. F, 25-Mar-13
For technical questions, contact:
pmostechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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