Freescale Semiconductor
Technical Data
Document Number: MRFG35003N6A
Rev. 2, 6/2009
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies
from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
Customer Premise Equipment (CPE) applications.
•
Typical Single - Carrier W - CDMA Performance: V
DD
= 6 Volts, I
DQ
=
180 mA, P
out
= 450 mWatts Avg., 3550 MHz, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 10 dB
Drain Efficiency — 27%
ACPR @ 5 MHz Offset — - 42.5 dBc in 3.84 MHz Channel Bandwidth
•
3 Watts P1dB @ 3550 MHz, CW
Features
•
Excellent Phase Linearity and Group Delay Characteristics
•
High Gain, High Efficiency and High Linearity
•
RoHS Compliant
•
In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel.
MRFG35003N6AT1
3.5 GHz, 3 W, 6 V
POWER FET
GaAs PHEMT
CASE 466 - 03, STYLE 1
PLD - 1.5
PLASTIC
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature
(1)
Symbol
V
DSS
V
GS
P
in
T
stg
T
ch
Value
8
-5
24
- 65 to +150
175
Unit
Vdc
Vdc
dBm
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
(2)
5.9
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak
Temperature
260
Unit
°C
1. For reliable operation, the operating channel temperature should not exceed 150°C.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2007 - 2009. All rights reserved.
MRFG35003N6AT1
1
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Saturated Drain Current
(V
DS
= 3.5 Vdc, V
GS
= 0 Vdc)
Off State Leakage Current
(V
GS
= - 0.4 Vdc, V
DS
= 0 Vdc)
Off State Drain Current
(V
DS
= 6 Vdc, V
GS
= - 2.2 Vdc)
Off State Current
(V
DS
= 20 Vdc, V
GS
= - 2.5 Vdc)
Gate- Source Cut - off Voltage
(V
DS
= 3.5 Vdc, I
DS
= 15 mA)
Quiescent Gate Voltage
(V
DS
= 6 Vdc, I
D
= 180 mA)
Symbol
I
DSS
I
GSS
I
DSO
I
DSX
V
GS(th)
V
GS(Q)
Min
—
—
—
—
- 1.2
- 1.1
Typ
2.9
<1
50
<1
- 0.95
- 0.82
Max
—
100
1000
15
- 0.7
- 0.6
Unit
Adc
μAdc
μAdc
mAdc
Vdc
Vdc
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 6 Vdc, I
DQ
= 180 mA, P
out
= 450 mWatts Avg., f = 3550 MHz,
Single- Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
G
ps
h
D
ACPR
8
22
—
10
27
- 42.5
—
—
- 38
dB
%
dBc
Typical RF Performance
(In Freescale Test Fixture, 50
οhm
system) V
DD
= 6 Vdc, I
DQ
= 180 mA, f = 3550 MHz
Output Power, 1 dB Compression Point, CW
P
1dB
—
3
—
W
MRFG35003N6AT1
2
RF Device Data
Freescale Semiconductor
V
BIAS
C11
C10
C9
C8
C15
C14
C13
C12
V
SUPPLY
C7
C16
C6
C17
C5
C18
C4
C19
Z9
RF
INPUT
Z1
Z2
Z3
Z4
Z5
C3
C1
C2
Z6
R1
Z7
Z8
Z10
Z11
Z12
RF
OUTPUT
Z13
Z14
Z15
Z16
C20
C22
C21
Z17
Z1
Z2, Z4
Z3
Z5
Z6
Z7
Z8, Z10
Z9
0.045″ x 0.753″ Microstrip
0.045″ x 0.025″ Microstrip
0.020″ x 0.360″ Microstrip
0.045″ x 0.075″ Microstrip
0.045″ x 0.055″ Microstrip
0.300″ x 0.125″ Microstrip
0.146″ x 0.070″ Microstrip
0.025″ x 0.485″ Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
PCB
0.300″ x 0.215″ Microstrip
0.025″ x 0.497″ Microstrip
0.025″ x 0.322″ Microstrip
0.025″ x 0.270″ Microstrip
0.025″ x 0.083″ Microstrip
0.045″ x 0.050″ Microstrip
0.045″ x 0.467″ Microstrip
Rogers 4350, 0.020″,
ε
r
= 3.5
Figure 1. MRFG35003N6A Test Circuit Schematic
Table 6. MRFG35003N6A Test Circuit Component Designations and Values
Part
C1
C2
C3
C4, C19, C20
C5, C18
C6, C17
C7, C16
C8, C15
C9, C14
C10, C13
C11, C12
C21, C22
R1
Description
0.5 pF Chip Capacitor
0.4 pF Chip Capacitor
0.5 pF Chip Capacitor
6.8 pF Chip Capacitors
10 pF Chip Capacitors
100 pF Chip Capacitors
100 pF Chip Capacitors
1000 pF Chip Capacitors
0.01
μF
Chip Capacitors
39K pF Chip Capacitors
10
μF,
50 V Chip Capacitors
0.7 pF Chip Capacitors
50
Ω
Chip Resistor
Part Number
08051J0R5BBS
06035J0R4BBS
06035J0R5BBS
08051J6R8BBS
ATC100A100JT150XT
ATC100A101JT150XT
ATC100B101JT500XT
ATC100B102JT50XT
ATC200B103KT50XT
ATC200B393KT50XT
GRM55DR61H106KA88B
08051J0R7BBS
CRCW040250R0FKTA
Manufacturer
AVX
AVX
AVX
AVX
ATC
ATC
ATC
ATC
ATC
ATC
Murata
AVX
Vishay
MRFG35003N6AT1
RF Device Data
Freescale Semiconductor
3
C10 C9
C14 C13
C11
C8
C7
C6
C5
C4
C3
R1
C20
C15
C16
C17
C18
C19
C12
C1
C2
C22
C21
MRFG350xxxx
Rev. 6
Figure 2. MRFG35003N6A Test Circuit Component Layout
MRFG35003N6AT1
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
14
12
G
ps
, POWER GAIN (dB)
10
8
6
η
D
4
2
18
20
22
24
26
28
30
32
P
out
, OUTPUT POWER (dBm)
10
0
V
DD
= 6 Vdc, I
DQ
= 180 mA, f = 3550 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF)
G
ps
60
50
40
30
20
η
D
,
DRAIN EFFICIENCY (%)
η
D
,
DRAIN EFFICIENCY (%)
IRL, INPUT RETURN LOSS (dB)
Figure 3. Single - Channel W - CDMA Power Gain
and Drain Efficiency versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
0
V
DD
= 6 Vdc, I
DQ
= 180 mA, f = 3550 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF)
−5
−10
−10
−20
IRL
−30
−15
−20
−40
ACPR
−50
18
20
22
24
26
28
30
32
P
out
, OUTPUT POWER (dBm)
−25
−30
Figure 4. Single - Channel W - CDMA Adjacent
Channel Power Ratio and IRL versus Output Power
14
12
G
ps
, POWER GAIN (dB)
10
G
ps
8
6
η
D
4
2
3450
24
22
3650
28
26
V
DD
= 6 Vdc, I
DQ
= 180 mA, P
out
= 450 mW
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF)
34
32
30
3500
3550
f, FREQUENCY (MHz)
3600
Figure 5. Single - Channel W - CDMA Power Gain
and Drain Efficiency versus Frequency
NOTE:
Data is generated from the test circuit shown.
MRFG35003N6AT1
RF Device Data
Freescale Semiconductor
5
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