Freescale Semiconductor
Technical Data
Document Number: MRF8P23080H
Rev. 1, 11/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA and LTE base station applications with frequencies
from 2300 to 2620 MHz. Can be used in Class AB and Class C for all typical
cellular base station modulation formats.
•
Typical Doherty Single--Carrier W--CDMA Performance: V
DD
= 28 Volts,
I
DQA
= 280 mA, V
GSB
= 0.7 Vdc, P
out
= 16 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF.
Frequency
2300 MHz
2350 MHz
2400 MHz
G
ps
(dB)
14.6
14.7
14.6
η
D
(%)
42.0
41.6
41.4
Output PAR
(dB)
6.7
6.8
6.6
ACPR
(dBc)
--29.5
--31.5
--32.5
MRF8P23080HR3
MRF8P23080HSR3
2300-
-2400 MHz, 16 W AVG., 28 V
W-
-CDMA, LTE
LATERAL N-
-CHANNEL
RF POWER MOSFETs
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2350 MHz, 90 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
)
•
Typical P
out
@ 3 dB Compression Point
≃
100 Watts CW
Features
•
Production Tested in a Symmetrical Doherty Configuration
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Large--Signal Load--Pull Parameters and Common
Source S--Parameters
•
Internally Matched for Ease of Use
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
•
Designed for Digital Predistortion Error Correction Systems
•
RoHS Compliant
•
NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel.
•
NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel.
CASE 465M-
-01, STYLE 1
NI-
-780-
-4
MRF8P23080HR3
CASE 465H-
-02, STYLE 1
NI-
-780S-
-4
MRF8P23080HSR3
RF
inA
/V
GSA
3
1 RF
outA
/V
DSA
RF
inB
/V
GSB
4
2 RF
outB
/V
DSB
(Top View)
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
CW Operation @ T
C
= 25°C
Derate above 25°C
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
CW
Value
--0.5, +65
--6.0, +10
32, +0
--65 to +150
150
225
168
2.39
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
©
Freescale Semiconductor, Inc., 2010. All rights reserved.
MRF8P23080HR3 MRF8P23080HSR3
1
RF Device Data
Freescale Semiconductor
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 72°C, 16 W CW, 28 Vdc, I
DQA
= 280 mA, V
GSB
= 0.7 V, 2300 MHz
Case Temperature 80°C, 80 W CW
(3)
, 28 Vdc, I
DQA
= 280 mA, V
GSB
= 0.7 V, 2300 MHz
Symbol
R
θJC
Value
(1,2)
0.89
0.55
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
(4)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
(4)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 75
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DA
= 280 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 0.75 Adc)
V
GS(th)
V
GS(Q)
V
DS(on)
1.0
1.9
0.1
1.8
2.6
0.23
2.5
3.4
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(5,6)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQA
= 280 mA, V
GSB
= 0.7 Vdc, P
out
= 16 W Avg.,
f = 2300 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured
on 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
G
ps
η
D
PAR
ACPR
13.5
38.0
6.0
—
14.6
42.0
6.7
--29.5
18.5
—
—
--27.0
dB
%
dB
dBc
Typical Broadband Performance
(6)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQA
= 280 mA, V
GSB
= 0.7 Vdc,
P
out
= 16 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Frequency
2300 MHz
2350 MHz
2400 MHz
G
ps
(dB)
14.6
14.7
14.6
η
D
(%)
42.0
41.6
41.4
Output PAR
(dB)
6.7
6.8
6.6
ACPR
(dBc)
--29.5
--31.5
--32.5
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf. Select
Documentation/Application Notes -- AN1955.
3. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
4. Each side of device measured separately.
5. Part internally matched both on input and output.
6. Measurement made with device in a Symmetrical Doherty configuration
(continued)
MRF8P23080HR3 MRF8P23080HSR3
2
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances
(1)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQA
= 280 mA, V
GSB
= 0.7 Vdc,
2300--2400 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW
P
out
@ 3 dB Compression Point, CW
IMD Symmetry @ 20 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 100 MHz Bandwidth @ P
out
= 16 W Avg.
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
(2)
P1dB
P3dB
IMD
sym
—
—
—
55
100
30
—
—
—
W
W
MHz
VBW
res
G
F
∆G
∆P1dB
—
—
—
—
55
0.1
0.013
0.005
—
—
—
—
MHz
dB
dB/°C
dB/°C
1. Measurement made with device in a Symmetrical Doherty configuration.
2. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
MRF8P23080HR3 MRF8P23080HSR3
RF Device Data
Freescale Semiconductor
3
C6
V
GA
C5
C
C4
C18
C15
C17
V
DA
C16
C2
Z1
C8
C3
C9
CUT OUT AREA
C1
C13
C14
C20
C19
C7
R1
MRF8P23080H
Rev. 1
C10
V
GB
C12 C11
P
C21
C23
C24
C22
V
DB
Figure 2. MRF8P23080HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8P23080HR3(HSR3) Test Circuit Component Designations and Values
Part
C1, C7
C2, C8, C13, C19
C3, C9
C4, C5, C10, C11
C6, C12, C16, C22
C14, C20
C15, C21
C17, C23
C18, C24
R1
Z1
PCB
Description
0.8 pF Chip Capacitors
1.0 pF Chip Capacitors
18 pF Chip Capacitors
8.2 pF Chip Capacitors
1.0
μF,
50 V Chip Capacitors
10 pF Chip Capacitors
5.6 pF Chip Capacitors
10
μF,
50 V Chip Capacitors
470
μF,
63 V Electrolytic Capacitors
50
Ω,
1/4 W Chip Resistor
2500 MHz Band 90°, 3 dB Chip Hybrid Coupler
0.020″,
ε
r
= 3.5
Part Number
ATC600F0R8JT250XT
ATC600F1R0JT250XT
ATC600F180JT250XT
ATC600F8R2JT250XT
GRM21BR71H105KA12L
ATC600F100JT250XT
ATC600F5R6JT250XT
GRM55DR61H106KA88L
MCGPR63V477M13X26--RH
CRCW120650R0FKEA
GSC356--HYB2500
RO4350B
Manufacturer
ATC
ATC
ATC
ATC
Murata
ATC
ATC
Murata
Multicomp
Vishay
Soshin
Rogers
MRF8P23080HR3 MRF8P23080HSR3
4
RF Device Data
Freescale Semiconductor
Single--ended
λ
λ
4
4
Quadrature combined
λ
4
Doherty
λ
2
λ
2
Push--pull
Figure 3.
Possible Circuit Topologies
MRF8P23080HR3 MRF8P23080HSR3
RF Device Data
Freescale Semiconductor
5
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
