VS-MBRB15..CTPbF, VS-MBR15..CT-1PbF Series
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 2 x 7.5 A
TO-263AB (D
2
PAK)
TO-262AA
FEATURES
• 150 °C T
J
operation
• Center tap TO-220 package
• Low forward voltage drop
• High frequency operation
• High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
Base
common
cathode
2
Base
common
cathode
2
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
VS-MBRB15..CTPbF
VS-MBR15..CT-1PbF
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
max.
T
J
max.
Diode variation
E
AS
TO-263AB (D
2
PAK), TO-262AA
2 x 7.5 A
35 V, 45 V
0.57 V
15 mA at 125 °C
150 °C
Common cathode
7.0 mJ
DESCRIPTION
The VS-MBR(B)15... center tap Schottky rectifier has been
optimized for low reverse leakage at high temperature. The
proprietary barrier technology allows for reliable operation
up to 150 °C junction temperature. Typical applications are
in switching power supplies, converters, freewheeling
diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
7.5 A
pk
, T
J
= 125 °C
CHARACTERISTICS
Rectangular waveform
VALUES
15
35, 45
690
0.57
-65 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-MBRB1535CTPbF
VS-MBR1535CT-1PbF
35
VS-MBRB1545CTPbF
VS-MBR1545CT-1PbF
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
Maximum peak one cycle
non-repetitive surge
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
per leg
per device
SYMBOL
I
F(AV)
TEST CONDITIONS
T
C
= 131 °C, rated V
R
5 μs sine or 3 μs
rect. pulse
Following any rated load condition and
with rated V
RRM
applied
VALUES
7.5
15
690
150
7
2
mJ
A
A
UNITS
I
FSM
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
T
J
= 25 °C, I
AS
= 2 A, L = 3.5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
E
AS
I
AR
Revision: 18-Oct-16
Document Number: 94303
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBRB15..CTPbF, VS-MBR15..CT-1PbF Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
15 A
Maximum forward voltage drop
V
FM (1)
7.5 A
15 A
Maximum instantaneous reverse current
Maximum junction capacitance
Typical series inductance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
I
RM (1)
C
T
L
S
dV/dt
T
J
= 25 °C
T
J
= 125 °C
TEST CONDITIONS
T
J
= 25 °C
T
J
= 125 °C
Rated DC voltage
VALUES
0.84
0.57
0.72
0.1
15
400
8.0
10 000
mA
pF
nH
V/μs
V
UNITS
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C
Measured from top of terminal to mounting plane
Rated V
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case per leg
Typical thermal resistance,
case to heatsink
Maximum thermal resistance,
junction to ambient
Approximate weight
minimum
maximum
Case style D
2
PAK
Case style TO-262
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
R
thJA
DC operation
Mounting surface, smooth and greased
DC operation
TEST CONDITIONS
VALUES
-65 to +150
-65 to +175
3.0
0.50
60
2
0.07
6 (5)
12 (10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
Mounting torque
Marking device
MBRB1545CT
MBR1545CT-1
Revision: 18-Oct-16
Document Number: 94303
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBRB15..CTPbF, VS-MBR15..CT-1PbF Series
www.vishay.com
Vishay Semiconductors
100
100
I
R
- Reverse Current (mA)
10
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
I
F
- Instantaneous
Forward Current (A)
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.1
0.01
0.001
0.0001
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
1
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
1.8 2.0
0
5
10
15
20
25
30
35
40
45
V
FM
- Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage
(Per Leg)
1000
C
T
- Junction Capacitance (pF)
T
J
= 25 °C
100
0
10
20
30
40
50
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Z
thJC
- Thermal Impedance (°C/W)
10
1
P
DM
0.1
t
1
t
2
0.01
Single pulse
(thermal resistance)
0.001
0.00001
0.0001
0.001
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.01
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.1
1
10
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics (Per Leg)
Revision: 18-Oct-16
Document Number: 94303
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBRB15..CTPbF, VS-MBR15..CT-1PbF Series
www.vishay.com
150
Vishay Semiconductors
7
Allowable Case Temperature (°C)
Average Power Loss (W)
6
5
4
3
2
1
0
140
DC
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
RMS limit
130
Square wave (D = 0.50)
Rated V
R
applied
See note (1)
DC
120
0
2
4
6
8
10
12
0
2
4
6
8
10
12
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
I
FSM
- Non-Repetitive Surge Current (A)
1000
At any rated load condition
and with rated V
RRM
applied
following surge
100
10
100
1000
10 000
t
p
- Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= rated V
R
Revision: 18-Oct-16
Document Number: 94303
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-MBRB15..CTPbF, VS-MBR15..CT-1PbF Series
www.vishay.com
ORDERING INFORMATION TABLE
Device code
Vishay Semiconductors
VS- MBR
1
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
2
B
3
15
4
45
5
CT
6
-1
7
TRL PbF
8
9
Vishay Semiconductors product
Essential part number
B = D
2
PAK
None = TO-262
7
None
7
= -1
Current rating (15 = 15 A)
Voltage ratings
CT = essential part number
None = D
2
PAK
-1 = TO-262
3
3
=B
None
35 = 35 V
45 = 45 V
None = tube (50 pieces)
TRL = tape and reel (left oriented - for D
2
PAK only)
TRR = tape and reel (right oriented - for D
2
PAK only)
9
-
PbF = lead (Pb)-free (for TO-262 and D
2
PAK tube)
P = lead (Pb)-free (for D
2
PAK TRR and TRL)
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Packaging information
SPICE model
www.vishay.com/doc?95014
www.vishay.com/doc?95008
www.vishay.com/doc?95032
www.vishay.com/doc?95294
Revision: 18-Oct-16
Document Number: 94303
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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