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SB5H90-E3/54

产品描述Schottky Diodes & Rectifiers 90 Volt 5.0 Amp 200 Amp IFSM
产品类别分立半导体    二极管   
文件大小76KB,共4页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
下载文档 详细参数 全文预览

SB5H90-E3/54概述

Schottky Diodes & Rectifiers 90 Volt 5.0 Amp 200 Amp IFSM

SB5H90-E3/54规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Vishay(威世)
零件包装代码DO-201AD
包装说明O-PALF-W2
针数2
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性FREE WHEELING DIODE, LOW POWER LOSS, LOW LEAKAGE CURRENT
应用EFFICIENCY
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.7 V
JEDEC-95代码DO-201AD
JESD-30 代码O-PALF-W2
JESD-609代码e3
最大非重复峰值正向电流200 A
元件数量1
相数1
端子数量2
最高工作温度175 °C
最大输出电流5 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT APPLICABLE
认证状态Not Qualified
最大重复峰值反向电压90 V
表面贴装NO
技术SCHOTTKY
端子面层Matte Tin (Sn)
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT APPLICABLE

文档预览

下载PDF文档
SB5H90, SB5H100
www.vishay.com
Vishay General Semiconductor
High Voltage Schottky Plastic Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Guardring for overvoltage protection
• Low power losses and high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• High frequency operation
DO-201AD
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
I
R
T
J
max.
Package
Diode variations
5.0 A
90 V, 100 V
200 A
0.70 V
200 μA
175 °C
DO-201AD
Single
For use in middle voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case:
DO-201AD
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
Color band denotes the cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
C
= 80 °C
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Peak repetitive reverse surge current at t
p
= 2.0 μs, 1 kHz
Storage temperature range
Maximum operating junction temperature
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
I
RRM
T
STG
T
J
SB5H90
90
90
90
5.0
200
1.0
- 55 to + 175
175
SB5H100
100
100
100
UNIT
V
V
V
A
A
A
°C
°C
Revision: 20-Jan-14
Document Number: 88722
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

 
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