IRF3710SPbF
IRF3710LPbF
l
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Lead-Free
HEXFET
®
Power MOSFET
D
V
DSS
= 100V
R
DS(on)
= 23mΩ
G
S
I
D
= 57A
Description
Advanced HEXFET
®
Power MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable device for use in
a wide variety of applications.
The D
2
Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D
2
Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF3710L) is available for low-profile applications.
D
2
Pak
IRF3710SPbF
TO-262
IRF3710LPbF
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
57
40
180
200
1.3
± 20
28
20
5.8
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient
(PCB Mounted,steady-state)**
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
1
www.irf.com
© 2013 International Rectifier
Submit Datasheet Feedback
November 12, 2013
IRF3710S/LPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
E
AS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Min.
100
–––
–––
2.0
32
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
23
mΩ V
GS
= 10V, I
D
=28A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 25V, I
D
= 28A
25
V
DS
= 100V, V
GS
= 0V
µA
250
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
130
I
D
= 28A
26
nC
V
DS
= 80V
43
V
GS
= 10V, See Fig. 6 and 13
–––
V
DD
= 50V
–––
I
D
= 28A
ns
–––
R
G
= 2.5Ω
–––
V
GS
= 10V, See Fig. 10
Between lead,
4.5 –––
6mm (0.25in.)
nH
G
from package
7.5 –––
and center of die contact
3130 –––
V
GS
= 0V
410 –––
V
DS
= 25V
72 –––
pF
ƒ = 1.0MHz, See Fig. 5
1060
280 mJ I
AS
= 28A, L = 0.70mH
Typ.
–––
0.13
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
58
45
47
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Notes:
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
57
––– –––
showing the
A
G
integral reverse
––– ––– 230
S
p-n junction diode.
––– ––– 1.2
V
T
J
= 25°C, I
S
= 28A, V
GS
= 0V
––– 140 220
ns
T
J
= 25°C, I
F
= 28A
––– 670 1010 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Starting T
J
= 25°C, L = 0.70mH, R
G
= 25Ω,
I
AS
= 28A, V
GS
=10V. (See Figure 12).
≤
28A, di/dt
≤
380A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C.
Pulse width
≤
400µs; duty cycle
≤
2%.
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
J
= 175°C .
Uses IRF3710 data and test conditions.
**When mounted on 1" square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to application
note #AN-994.
2
www.irf.com
© 2013 International Rectifier
Submit Datasheet Feedback
November 12, 2013
IRF3710S/LPbF
1000
100
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
VGS
TOP
16V
10V
7.0V
6.0V
5.0V
4.5V
4.0V
BOTTOM 3.5V
1000
100
VGS
16V
10V
7.0V
6.0V
5.0V
4.5V
4.0V
BOTTOM 3.5V
TOP
10
10
3.5V
1
3.5V
1
20µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
20µs PULSE WIDTH
Tj = 175°C
0.1
0.1
1
10
100
100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.00
3.0
I
D
= 57A
ID, Drain-to-Source Current
(Α
)
2.5
T J = 175°C
10.00
R
DS(on)
, Drain-to-Source On Resistance
100.00
2.0
(Normalized)
1.5
T J = 25°C
1.00
1.0
0.10
3.0
4.0
5.0
VDS =
50V
15V
20µs PULSE WIDTH
6.0
7.0
8.0
9.0
0.5
0.0
-60
-40
-20
0
20
40
60
80
V
GS
= 10V
100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
T
J
, Junction Temperature
(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
3
www.irf.com
© 2013 International Rectifier
Submit Datasheet Feedback
November 12, 2013
IRF3710S/LPbF
100000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
V
GS
, Gate-to-Source Voltage (V)
12
I
D
=
28A
10000
Coss = C + Cgd
ds
10
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
C, Capacitance(pF)
Ciss
1000
7
Coss
5
100
Crss
2
10
1
10
100
0
0
20
40
60
80
100
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.00
1000
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100.00
TJ = 175°C
10.00
100
100µsec
10
1
1msec
1.00
T J = 25°C
VGS = 0V
0.1
Tc = 25°C
Tj = 175°C
Single Pulse
0.01
0.1
1
10
10msec
DC
100
1000
0.10
0.0
0.5
1.0
1.5
2.0
VSD, Source-toDrain Voltage (V)
0.01
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
Fig 8.
Maximum Safe Operating Area
www.irf.com
© 2013 International Rectifier
Submit Datasheet Feedback
November 12, 2013
IRF3710S/LPbF
60
V
DS
50
R
D
V
GS
R
G
D.U.T.
+
40
-
V
DD
I
D
, Drain Current (A)
30
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
20
Fig 10a.
Switching Time Test Circuit
10
V
DS
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature
( °C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
1
(Z
thJC
)
D = 0.50
0.20
Thermal Response
0.1
0.10
0.05
0.02
0.01
Notes:
1. Duty factor D =
2. Peak T
t
1
/ t
2
+T
C
1
J
= P
DM
x Z
thJC
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
0.01
0.00001
0.0001
0.001
0.01
0.1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
www.irf.com
© 2013 International Rectifier
Submit Datasheet Feedback
November 12, 2013
电源技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
